FUJI 2SK1941

2SK1941-01R
N-channel MOS-FET
FAP-IIA Series
600V
> Features
-
0,55Ω
16A
100W
> Outline Drawing
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = ± 30V Guarantee
Avalanche Proof
> Applications
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage (RGS=20KΩ)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V DS
V DGR
ID
I D(puls)
V GS
PD
T ch
T stg
Rating
600
600
16
64
±30
100
150
-55 ~ +150
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Symbol
V (BR)DSS
V GS(th)
I DSS
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
I
R
g
C
C
C
t
t
t
t
I
I
I
V
t
Q
Turn-Off-Time toff (ton=td(off)+tf)
Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
Test conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=600V
Tch=25°C
VGS=0V
Tch=125°C
VGS=±30V
VDS=0V
ID=8A
VGS=10V
ID=8A
VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=8A
VGS=10V
RGS=10 Ω
Tch=25°C
L = 100µH
Min.
600
2,5
9
Typ.
3,0
10
0,2
10
0,37
18
3300
310
70
35
70
180
100
DRM
rr
rr
Symbol
R th(ch-a)
R th(ch-c)
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Test conditions
channel to air
channel to case
3,5
500
1,0
100
0,55
4950
470
110
55
110
270
150
16
DR
SD
Max.
1,0
500
4,0
Min.
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
Typ.
16
64
1,5
Max.
30
1,25
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
µC
Unit
°C/W
°C/W
2SK1941-01R
N-channel MOS-FET
600V
0,55Ω
16A
FAP-IIA Series
100W
> Characteristics
Typical Output Characteristics
↑
Drain-Source-On-State Resistance vs. Tch
↑
→
Tch [°C]
Typical Drain-Source-On-State-Resistance vs. ID
Gate Threshold Voltage vs. Tch
↑
ID [A]
→
Tch [°C]
VDS [V]
C [nF]
8
VDS [V]
→
Qg [nC]
Allowable Power Dissipation vs. TC
↑
↑
IF [A]
↑
→
Forward Characteristics of Reverse Diode
VGS [V]
Typical Input Charge
7
6
VGS(th) [V]
5
→
Typical Capacitance vs. VDS
→
VGS [V]
gfs [S]
RDS(ON) [Ω]
ID [A]
↑
→
Typical Forward Transconductance vs. ID
↑
4
3
ID [A]
ID [A]
VDS [V]
↑
↑
2
RDS(ON) [Ω]
1
Typical Transfer Characteristics
9
→
VSD [V]
→
Safe operation area
Zth(ch-c) [K/W]
↑
↑
12
11
ID [A]
10
PD [W]
↑
Transient Thermal impedance
Tc [°C]
→
VDS [V]
→
This specification is subject to change without notice!
t [s]
→