FUJI 2SK2870-01L

2SK2870-01L,S
N-channel MOS-FET
FAP-IIS Series
450V
> Features
-
1,2Ω
±8A
50W
> Outline Drawing
High Speed Switching
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Voltage
VGS = ± 30V Guarantee
Repetitive Avalanche Rated
> Applications
-
Switching Regulators
UPS
DC-DC converters
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Repatitive or non-repatitive
Max. Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V DS
ID
I D(puls)
V GS
I AV
E AV
PD
T ch
T stg
Rating
450
±8
±32
±35
8
215.9
50
150
-55 ~ +150
Unit
V
A
A
V
A
mJ
W
°C
°C
L=6.19mH,Vcc=45V
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
Turn-Off-Time toff (ton=td(off)+tf)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
- Thermal Characteristics
Item
Thermal Resistance
Symbol
BV DSS
V GS(th)
I DSS
I
R
g
C
C
C
t
t
t
t
I
V
t
Q
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
AV
SD
rr
rr
Symbol
R th(ch-c)
R th(ch-a)
Test conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=450V
Tch=25°C
VGS=0V
Tch=125°C
VGS=±35V
VDS=0V
ID=4A
VGS=10V
ID=4A
VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=8A
VGS=10V
RGS=10 Ω
Tch=25°C
L = 6,19mH
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Min.
450
3,5
Test conditions
channel to case
channel to air
Min.
2
Typ.
Max.
4,0
10
0,2
10
1,0
4
540
100
45
13
40
45
25
4,5
500
1,0
100
1,2
1,10
450
3,7
1,65
120
810
150
70
20
60
70
40
8
Typ.
Max.
2,5
125,0
Unit
V
V
µA
mA
nA
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
Unit
°C/W
°C/W
2SK2870-01L,S
N-channel MOS-FET
450V
1,2Ω
±8A
FAP-IIS Series
50W
> Characteristics
Typical Output Characteristics
Drain-Source-On-State Resistance vs. Tch
ID=f(VDS); 80µs pulse test; TC=25°C
ID [A]
↑
RDS(ON) [Ω]
1
VDS [V]
2
→
Tch [°C]
→
VGS [V]
→
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
RDS(on)=f(ID); 80µs pulse test;TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
5
→
ID [A]
Typical Capacitances vs. VDS
VGS(th) [V]
↑
gfs [S]
↑
4
Tch [°C]
Typical Gate Charge Characteristic
IF=f(VSD); 80µs pulse test; VGS=0V
↑
VDS [V]
↑
7
VDS [V]
8
→
Qg [nC]
Avalanche Energy Derating
↑
↑
→
VSD [V]
Starting Tch [°C]
→
→
↑
Zth(ch-c) [K/W]
ID=f(VDS): D=0,01, Tc=25°C
↑
Transient Thermal impedance
Zthch=f(t) parameter:D=t/T
12
ID [A]
Eas [mJ]
9
Safe operation area
Eas=f(starting Tch): Vcc=45V; IAV<=8A
10
→
Forward Characteristics of Reverse Diode
VGS=f(Qg): ID=8A; Tc=25°C
IF [A]
C=f(VDS); VGS=0V; f=1MHz
6
→
VGS [V]
ID [A]
↑
3
Typical Drain-Source-On-State-Resistance vs. ID
↑
RDS(ON) [Ω]
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
↑
ID [A]
↑
C [F]
Typical Transfer Characteristics
RDS(on) = f(Tch): ID=4A; VGS=10V
VDS [V]
→
This specification is subject to change without notice!
t [s]
→
2SK2870-01L,S
N-channel MOS-FET
450V
1,2Ω
±8A
FAP-IIS Series
50W
> Characteristics
Power Dissipation
PD=f(TC)
125
100
PD / PDmax [%]
→
75
50
25
0
0
0
0
0
0
TC [°C]
This specification is subject to change without notice!
0
0