2SK2908-01L,S N-channel MOS-FET FAP-IIIB Series 600V > Features - 1,2Ω ±9A 60W Max. Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns A V ns µC > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AV PD T ch T stg Rating 600 ±9 ±32 ±35 9 144.4 60 150 -55 ~ +150 Unit V A A V V mJ* W °C °C L=3.27mH,Vcc=60V - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I DSS I GSS R DS(on) g C C C t t t t I V t Q R R fs iss oss rss d(on) r d(off) f AV SD rr rr th(ch-c) th(ch-a) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=600V Tch=25°C VGS=0V Tch=125°C VGS=±35V VDS=0V ID=4,5A VGS=10V VGS=10V ID=4,5A ID=4,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V VGS=10V ID=9A RGS=10 Ω Tch=25°C L = 3,27mH IF=2 X IDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 600 3,5 Symbol channel to case channel to ambient Min. 2,5 Typ. 4,0 10 0,2 10 1,0 1,0 5 900 150 70 25 70 60 35 4,5 500 1,0 100 1,2 1,2 1400 230 110 40 110 90 60 9 1,0 550 7,0 Typ. 1,50 Max. 2,08 75,0 Unit °C/W °C/W 2SK2908-01L,S N-channel MOS-FET 600V 1,2Ω ±9A FAP-IIIB Series 60W > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C ID [A] ↑ RDS(ON) [mΩ] 1 VDS [V] 2 → Tch [°C] 3 → VGS [V] → Typical Drain-Source On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS 4 ↑ 5 → ID [A] Typical Capacitances vs. VDS Tch [°C] Typical Gate Charge Characteristic IF=f(VSD); 80µs pulse test;VGS=0V ↑ VDS [V] ↑ 7 VDS [V] 8 → Qg [nC] Maximum Avalanche Energy vs. starting Tch → Forward Characteristics of Reverse Diode VGS=f(Qg); ID=9A; TC=25°C ↑ ↑ IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] VGS(th) [V] ↑ gfs [S] ↑ RDS(ON) [mΩ] ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ C [F] Typical Transfer Characteristics RDS(on) = f(Tch); ID=4,5A; VGS=10V 9 → VSD [V] → Safe Operation Area Eas=f(starting Tch): VCC=60V; IAV ≤9A ID=f(VDS): D=0,01, Tc=25°C Transient Thermal impedance ↑ ↑ 12 starting Tch [°C] → Zthch=f(t) parameter:D=t/T Zth(ch-c) [K/W] ID [A] 10 EAV [mJ] ↑ VDS [V] → This specification is subject to change without notice! t [s] → N-channel MOS-FET 600V 1,2Ω ±9A 60W 2SK2908-01L,S FAP-IIIB Series > Characteristics Power Dissipation PD=f(TC) 125 PD / PDmax [%] 100 75 50 25 0 0 25 50 75 100 125 150 TC [°C] Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 starting Tch [°C] 100 This specification is subject to change without notice! 125 150