2SK2871-01 N-channel MOS-FET FAP-IIS Series 450V > Features - 1,2Ω ±8A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repetitive or Non-Repetitive (Tch ≤ 150°C) Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AR E AS PD T ch T stg Rating 450 ±8 ±32 ±35 8 215.9 50 150 -55 ~ +150 Unit V A A V A mJ W °C °C L=6.19mH,Vcc=45V - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-c) R th(ch-a) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=450V Tch=25°C VGS=0V Tch=125°C VGS=±35V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 Ω Tch=25°C L = 6,19mH IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 450 3,5 Test conditions channel to case channel to air Min. 2 Typ. Max. 4,0 10 0,2 10 1,0 4 540 100 45 13 40 45 25 4,5 500 1,0 100 1,2 1,1 450 3,7 1,65 810 150 70 20 60 70 40 8 Typ. Max. 2,50 125,0 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC Unit °C/W °C/W 2SK2871-01 N-channel MOS-FET 450V 1,2Ω ±8A FAP-IIS Series 50W > Characteristics Typical Output Characteristics Drain-Source-On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C ID [A] ↑ RDS(ON) [Ω] 1 VDS [V] 2 → Tch [°C] → VGS [V] → Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test;TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS 5 → ID [A] Typical Capacitances vs. VDS VGS(th) [V] ↑ gfs [S] ↑ 4 Tch [°C] Typical Gate Charge Characteristic IF=f(VSD); 80µs pulse test; VGS=0V ↑ VDS [V] ↑ 7 VDS [V] 8 → Qg [nC] Avalanche Energy Derating ↑ ↑ → VSD [V] Starting Tch [°C] → → ↑ Zth(ch-c) [K/W] ID=f(VDS): D=0,01, Tc=25°C ↑ Transient Thermal impedance Zthch=f(t) parameter:D=t/T 12 ID [A] Eas [mJ] 9 Safe operation area Eas=f(starting Tch): Vcc=45V; IAV=8A 10 → Forward Characteristics of Reverse Diode VGS=f(Qg): ID=8A; Tc=25°C IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] ↑ 3 Typical Drain-Source-On-State-Resistance vs. ID ↑ RDS(ON) [Ω] ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ C [F] Typical Transfer Characteristics RDS(on) = f(Tch): ID=4A; VGS=10V VDS [V] → This specification is subject to change without notice! t [s] → 2SK2871-01 N-channel MOS-FET 450V 1,2Ω ±8A FAP-IIS Series 50W > Characteristics Power Dissipation PD=f(TC) 125 100 PD / PDmax [%] → 75 50 25 0 0 0 0 0 0 TC [°C] This specification is subject to change without notice! 0 0