2SK2690-01 N-channel MOS-FET FAP-IIIB Series 60V > Features - 0,01Ω 80A 125W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 80 320 ±20 599 125 150 -55 ~ +150 Unit V A A V mJ* W °C °C * L=0,125mH, VCC=24V - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance I R Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) g C C C t t t t I V t Q Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=40A VGS=4V VGS=10V ID=40A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=75A VGS=10V RGS=10 Ω Tch=25°C L = 100µH IF=160A VGS=0V Tch=25°C IF=80A VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 60 1,0 Test conditions channel to air channel to case Min. 25 Typ. Max. 1,5 10 0,2 10 0,012 0,0075 55 3500 1250 360 15 75 190 110 2,0 500 1,0 100 0,017 0,01 1,15 75 0,17 1,65 120 5250 1870 540 23 120 285 165 80 Typ. Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 Max. 35 1,0 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns A V ns µC Unit °C/W °C/W 2SK2690-01 N-channel MOS-FET 60V 0,01Ω 80A FAP-IIIB Series 125W > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. Tch ID=f(VDS); 80µs pulse test; TC=25°C ID [A] ↑ RDS(ON) [mΩ] 1 VDS [V] 2 → Tch [°C] → VGS [V] → Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch RDS(on)=f(ID); 80µs pulse test; TC=25°C gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C VGS(th)=f(Tch); ID=1mA; VDS=VGS 5 → ID [A] Typical Capacitances vs. VDS VGS(th) [V] ↑ gfs [S] ↑ 4 Tch [°C] Typical Gate Charge Characteristic IF=f(VSD); 80µs pulse test; Tch=25°C ↑ VDS [V] ↑ 7 VDS [V] 8 → Qg [nC] Maximum Avalanche Energy vs. starting Tch ↑ ↑ 9 → VSD [V] ↑ Zth(ch-c) [K/W] ID=f(VDS): D=0,01, Tc=25°C ↑ Transient Thermal impedance Zthch=f(t) parameter:D=t/T 12 ID [A] EAV [mJ] starting Tch [°C] → → Safe Operation Area EAV=f(starting Tch): VCC=24V; IAV ≤ 80A 10 → Forward Characteristics of Reverse Diode VGS=f(Qg); ID=80A; TC=25°C IF [A] C=f(VDS); VGS=0V; f=1MHz 6 → VGS [V] ID [A] ↑ 3 Typical Drain-Source On-State-Resistance vs. ID ↑ RDS(ON) [mΩ] ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ C [F] Typical Transfer Characteristics RDS(on) = f(Tch); ID=40A; VGS=10V VDS [V] → This specification is subject to change without notice! t [s] → 2SK2690-01 N-channel MOS-FET 60V 0,01Ω 80A FAP-IIIB Series 125W > Characteristics Power Dissipation PD=f(TC) 125 PD / PDmax [%] 100 75 50 25 0 0 25 50 75 100 125 150 125 150 TC [°C] Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 100 starting Tch [°C] This specification is subject to change without notice!