MOSFET IC DIP Type SMD Type Type Product specification 2N7002 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Voltage controlled small signal switch 0.4 3 High density cell design for low RDS(ON) 1 High saturation current capability 0.55 Rugged and reliable 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector 3 DRAIN Absolute Maximum Ratings Ta=25 Parameter Symbol Rating Unit VDS 60 V Drain Current ID 115 mA Power Dissipation PD 225 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to 150 Drain-Source voltage Electrical Characteristics Ta = 25 Parameter Symbol Drain-source breakdown voltage VDSS VGS=0 V, ID=10 µA Zero gate voltage drain current IDSS VDS=60 V, VGS=0 V Gate-body leakage Testconditons Min Typ Max Unit 80 nA 60 V lGSS VDS=0 V, VGS= 25 V Gate-threshold voltage VGS(th) VDS=VGS, ID=250 µA 1 2.5 Drain-source on-resistance rDS(0n) VGS=10 V, ID=500 mA 1 7.5 VGS=5 V, ID=50 mA 1 7.5 On-state drain current ID(on) VGS=10 V, VDS=7 V 500 VDS=10 V, ID=200 mA 80 Forward tran conductance Input capacitance gts 80 COSS Reverse transfer capacitance CrSS Turn-on Time td(0n) Turn-off Time td(off) Drain-source on-voltage VDS(on) Diode forward voltage VSD V mA 500 ms 50 Ciss Output capacitance nA VDS=25 V, VGS=0 V, f=1 MHz 25 pF 5 VDD=25 V, RL=50 ID=500 mA,VGEN=10 V RG=25 20 ns 40 VGS=10V, ID=500mA 0.5 3.75 V VGS=5V, ID=50mA 0.05 0.375 V IS=115 mA, VGS=0 V 0.55 1.2 V Marking Marking 702 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1