TYSEMI 2N7002

MOSFET
IC
DIP Type
SMD
Type
Type
Product specification
2N7002
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
Voltage controlled small signal switch
0.4
3
High density cell design for low RDS(ON)
1
High saturation current capability
0.55
Rugged and reliable
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
3 DRAIN
Absolute Maximum Ratings Ta=25
Parameter
Symbol
Rating
Unit
VDS
60
V
Drain Current
ID
115
mA
Power Dissipation
PD
225
mW
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to 150
Drain-Source voltage
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-source breakdown voltage
VDSS
VGS=0 V, ID=10 µA
Zero gate voltage drain current
IDSS
VDS=60 V, VGS=0 V
Gate-body leakage
Testconditons
Min
Typ
Max
Unit
80
nA
60
V
lGSS
VDS=0 V, VGS= 25 V
Gate-threshold voltage
VGS(th)
VDS=VGS, ID=250 µA
1
2.5
Drain-source on-resistance
rDS(0n)
VGS=10 V, ID=500 mA
1
7.5
VGS=5 V, ID=50 mA
1
7.5
On-state drain current
ID(on)
VGS=10 V, VDS=7 V
500
VDS=10 V, ID=200 mA
80
Forward tran conductance
Input capacitance
gts
80
COSS
Reverse transfer capacitance
CrSS
Turn-on Time
td(0n)
Turn-off Time
td(off)
Drain-source on-voltage
VDS(on)
Diode forward voltage
VSD
V
mA
500
ms
50
Ciss
Output capacitance
nA
VDS=25 V, VGS=0 V, f=1 MHz
25
pF
5
VDD=25 V, RL=50
ID=500 mA,VGEN=10 V
RG=25
20
ns
40
VGS=10V, ID=500mA
0.5
3.75
V
VGS=5V, ID=50mA
0.05
0.375
V
IS=115 mA, VGS=0 V
0.55
1.2
V
Marking
Marking
702
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1