TYSEMI 2SK2731

MOSFET
SMD Type
Product specification
2SK2731
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
Easily designed drive circuits.
1
Easy to parallel.
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
Fast switching speed.
0.4
3
Low on-resistance.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
Drain current
20
ID
0.2
Unit
V
V
A
Idp *
0.8
A
Power dissipation
PD
0.2
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain source breakdown voltage
VDSS
ID=1mA,VGS=0V
Drain cut-off current
IDSS
VDS=30V,VGS=0
Gate leakage current
IGSS
VGS= 20V,VDS=0
VGS(th)
VDS=10V,ID=1mA
1.0
Yfs
VDS=10V,ID=0.1A
100
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Testconditons
Min
Typ
Max
30
Unit
V
10
10
2.5
A
A
V
ms
VGS=10V,ID=0.1A
1.5
2.8
VGS=4V,ID=0.1A
2.8
4.5
25
pF
15
pF
Crss
10
pF
Turn-on delay time
ton
15
ns
Rise time
tr
20
ns
Turn-off delay time
toff
90
ns
Fall time
tf
100
ns
VDS=10V,VGS=0,f=1MHZ
ID=0.1A,VGS(on)=10V,RG=10 ,RL=150
,VDD=15V
Marking
Marking
KL
http://www.twtysemi.com
[email protected]
4008-318-123
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