MOSFET SMD Type Product specification 2SK1828 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 2.5V Gate Drive 0.4 3 Features 1 High Speed 0.55 Low Threshold Voltage :Vth=0.5 to 1.5V 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 20 V Gate to source voltage VGSS 10 V Drain current ID 50 mA Power dissipation PD 200 mW Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10ms, duty cycle 5% Electrical Characteristics Ta = 25 Parameter Symbol Drain source breakdown voltage VDSS ID=100 A,VGS=0 Testconditons Min Typ Max 20 Unit V Drain cut-off current IDSS VDS=20V,VGS=0 1.0 A Gate leakage current IGSS VGS=10V,VDS=0 1 A Forward transfer admittance Yfs VDS=3.0V,ID=10mA Drain to source on-state resistance 20 RDS(on) VGS=2.5V,ID=10mA Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Switching time turn on time Switching time turn off time toff ms 25 40 5.5 pF 1.6 pF Crss 6.5 pF ton 0.14 s 0.14 s VDS=3.0V,VGS=0,f=1MHZ ID=10mA,VGS(on)=0 to 2.5V,VDD=3.0V Marking Marking KI http://www.twtysemi.com [email protected] 4008-318-123 1 of 1