TPCP8701 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8701 Portable Equipment Applications Switching Applications Unit: mm 0.33±0.05 Inverter Lighting Applications 0.05 M A 5 Small footprint due to small and thin package • High DC current gain : hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation : VCE (sat) = 0.14 V (max) • High-speed switching : tf = 120 ns (typ.) 0.475 1 B 0.05 M B 0.65 2.9±0.1 A 0.8±0.05 Maximum Ratings (Ta = 25°C) Symbol Rating S 0.025 S Characteristics 4 2.8±0.1 • 2.4±0.1 8 0.28 +0.1 -0.11 0.17±0.02 Unit +0.13 1.12 -0.12 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC (Note 1) Pulse (Note 1 ) Base current Collector power dissipation (t = 10s) Collector power dissipation (DC) VCBO 100 V VCEX 80 V VCEO 50 V VEBO 7 V IC 3.0 ICP 5.0 IB 300 Single-device operation Single-device value at dual operation 1.Emitter1 2.Base1 3.Emitter2 4.Base2 A Pc (Note 2) 0.28 +0.1 -0.11 5.Collector2 6.Collector2 7.Collector1 8.Collector1 JEDEC ― JEITA ― TOSHIBA 2-3V1C Weight: 0.017 g (typ.) mA Figure 1. Circuit configuration (Top View) 1.77 W 0.95 8 7 6 5 Single-device operation Single-device value at dual operation +0.13 1.12 -0.12 0.94 Pc (Note 2) Junction temperature Storage temperature range W 0.54 Tj 150 °C Tstg −55 to 150 °C 1 2 3 4 Figure 2. Marking (Note 3) Note 1: Please use devices on condition that the junction temperature is below 150°C. 2 Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm ) 8 7 6 5 Note 3: ● on lower left on the marking indicates Pin 1. 8701 ※ Weekly code: (Three digits) Type ※ Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 1 1 2 3 4 Lot No. (Weekly code) 2004-05-11 TPCP8701 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Collector cut-off current ICBO VCB = 100 V, IE = 0 Min Typ. Max Unit ⎯ ⎯ 100 nA IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.3 A 400 ⎯ 1000 Emitter cut-off current Collector-emitter brakedown voltage Test Condition DC current gain hFE (2) VCE = 2 V, IC = 1 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 0.14 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 1.10 V VCB = 10 V, IE = 0, f = 1MHz ⎯ 13 ⎯ pF See Figure 3 circuit diagram VCC ∼ − 30 V, RL = 30 Ω IB1 = −IB2 = 33.3 mA ⎯ 40 ⎯ ⎯ 500 ⎯ ⎯ 120 ⎯ Collector output capacitance Cob Rise time Switching time tr Storage time tstg Fall time tf ns Figure 3. Switching Time Test Circuit & Timing Chart VCC 20µs RL IB1 IB2 Input IB1 Output Duty cycle ＜1% IB2 2 2004-05-11 TPCP8701 IC – VCE hFE – IC 10000 Common emitter Ta = 25°C Single nonrepetitive pulse 60 70 3 Common emitter VCE = 2 V Single nonrepetitive pulse 50 DC current gain hFE Collector current IC (A) 4 40 30 20 2 10 5 1 2 Ta = 100°C 1000 25°C −55°C 100 IB = 1 mA 0 0 0.4 0.2 0.8 0.6 Collector−emitter voltage VCE 10 0.001 1.0 0.01 Collector current IC (V) VCE (sat) – IC Common emitter β = 50 Single nonrepetitive pulse 0.1 Ta = 100°C −55°C 0.01 25°C 0.001 0.001 0.01 1 0.1 Collector current IC Ta = −55°C 1 100°C 25°C 0.1 0.001 10 0.01 (A) 0.1 (W) PC 2 Collector power dissipation Collector current IC (A) VCE = 2 V Single nonrepetitive pulse −55°C 1 25°C 0.4 0.8 (A) Pc – Ta Common emitter 0 0 10 1 Collector current IC 1.0 Ta = 100°C (A) Common emitter β = 50 Single nonrepetitive pulse IC – VBE 3 10 VBE (sat) – IC 10 Base-emitter saturation voltage VBE (sat) (V) Collector−emitter saturation voltage VCE (sat) (V) 1 1 0.1 1.2 Base−emitter saturation voltage VBE (V) 0.8 0.6 (2) 0.4 0.2 0 0 1.6 DC Operation Ta = 25°C Mounted on an FR4 board glass epoxy, 2 1.6 mm thick, Cu area: 645 mm ) (1) Single-device operation (2) Single-device value at dual operation (1) 20 40 60 80 100 Ambient temperature (2) 3 Ta 120 140 160 (°C) 2004-05-11 TPCP8701 rth – tw Transient thermal resistance rth(j-a) (°C/W) 1000 (2) 100 (1) 10 1 0.001 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2) (1) Single-device operation (2) Single-device value at dual operation 0.01 0.1 1 10 Pulse width Permissible Power Dissipation for Simultaneous Operation 100 µs※ 10 µs※ 10 s※* 1 100 ms※* DC operation Ta = 25°C ※: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms, 10 s and DC operation will be 0.1 different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ). Single-device operation These characteristic curves must be derated linearly with increase in temperature. 0.01 0.1 1 VCEO max Collector current IC (A) IC max (Continuous)* 10 Permissible power dissipation for Q2 PC (W) 10 10 ms※ 1 ms※ 1000 tw (s) Safe operating area IC max (Pulsed)※ 100 1.0 DC operation Ta = 25°C Mounted on an FR4 board glass epoxy, 2 1.6 mm thick, Cu area: 645 mm ) 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 Permissible power dissipation for Q1 PC (W) 100 Collector power dissipation at the single-device Collector−emitter voltage VCE (V) operation is 0.94W. Collector power dissipation at the single-device value at dual operation is 0.54W. Collector power dissipation at the dual operation is set to 1.08W. 4 2004-05-11 TPCP8701 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-05-11