MMDTA42 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • A Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Lead Free/RoHS Compliant (Note 3) "Green" Device, Note 4 and 5 SOT-26 B C Mechanical Data • • • • • • • • • Case: SOT-26 Case Material: Molded Plastic, "Green" Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Marking Information: K3M, See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) Maximum Ratings H K M J D F L Q2 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 F ⎯ ⎯ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 α 0° 8° ⎯ All Dimensions in mm Q1 @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Note 1) (Note 2) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Symbol VCBO VCEO VEBO IC Pd RθJA Value 300 300 6.0 500 300 417 Unit V V V mA mW °C/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Notes: 1. 2. 3. 4. 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RθJA), power dissipation rating (Pd) and power derating curve (Figure 1). No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30438 Rev. 5 - 2 1 of 3 www.diodes.com MMDTA42 © Diodes Incorporated Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 6) Symbol Min Max Unit V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 300 300 6.0 ⎯ ⎯ ⎯ ⎯ ⎯ 100 100 V V V nA nA hFE 25 40 40 ⎯ ⎯ VCE(SAT) VBE(SAT) ⎯ ⎯ 0.5 0.9 V V Ccb ⎯ 3.0 pF fT 50 ⎯ MHz DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: Test Condition IC = 100μA, IE = 0 IC = 1.0mA, IB = 0 IE = 100μA, IC = 0 VCB = 200V, IE = 0 VCE = 6.0V, IC = 0 IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V IC = 20mA, IB = 2.0mA IC = 20mA, IB = 2.0mA VCB = 20V, f = 1.0MHz, IE = 0 VCE = 20V, IC = 10mA, f = 100MHz 6. Short duration pulse test used to minimize self-heating effect. 2.0 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 0 IC IB = 10 1.8 1.6 TA = 150°C 1.4 1.2 1.0 TA = 25°C 0.8 0.6 0.4 T A = -50°C 0.2 0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature 200 1 1.0 10,000 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V 1,000 hFE, DC CURRENT GAIN 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current T A = 150°C 100 T A = -50°C TA = 25°C 10 1 1 0.8 T A = -50°C 0.7 0.6 T A = 25°C 0.5 0.4 0.3 TA = 150°C 0.2 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs. Collector Current 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current DS30438 Rev. 5 - 2 VCE = 5V 0.9 2 of 3 www.diodes.com MMDTA42 © Diodes Incorporated fT, GAIN BANDWIDTH PRODUCT (MHz) 100 10 1 1 10 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs. Collector Current Ordering Information (Note 5 & 7 ) Device MMDTA42-7-F Notes: Packaging SOT-26 Shipping 3000/Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K3M YM K3M = Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September YM K3M Date Code Key Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code R S T U V W X Y Z Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30438 Rev. 5 - 2 3 of 3 www.diodes.com MMDTA42 © Diodes Incorporated