MMSTA05/MMSTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (MMSTA55/MMSTA56) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Notes 3 and 4) SOT-323 A C B C B E G Mechanical Data • • • • • • • • • • H Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). MMSTA05 Marking K1H, K1G (See Page 3) MMSTA06 Marking K1G (See Page 3) Order & Date Code Information: See Page 3 Weight: 0.006 grams (approximate) Maximum Ratings K M J D L E C Dim Min Max A 0.25 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 0.40 G 1.20 1.40 H 1.80 2.20 J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.18 α 0° 8° All Dimensions in mm E B @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Symbol VCBO VCEO VEBO IC Pd RθJA Tj, TSTG MMSTA05 60 60 MMSTA06 80 80 Unit V V V mA mW °C/W °C 4.0 500 200 625 -55 to +150 @TA = 25°C unless otherwise specified Symbol MMSTA05 MMSTA06 MMSTA05 MMSTA06 Min Max Unit ⎯ V IC = 100μA, IE = 0 ⎯ V IC = 1.0mA, IB = 0 ⎯ V IE = 100μA, IC = 0 VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V V(BR)EBO 60 80 60 80 4.0 MMSTA05 MMSTA06 ICBO ⎯ 100 nA MMSTA05 MMSTA06 ICES ⎯ 100 nA hFE 100 ⎯ ⎯ VCE(SAT) VBE(SAT) ⎯ ⎯ 0.25 1.2 V V fT 100 ⎯ MHz V(BR)CBO V(BR)CEO Test Condition ON CHARACTERISTICS (Note 5) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Notes: 1. 2. 3. 4. 5. IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V IC = 100mA, IB = 10mA IC = 100mA, VCE = 1.0V VCE = 2.0V, IC = 10mA, f = 100MHz Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. Short duration pulse test used to minimize self-heating effect. DS30168 Rev. 9 - 2 1 of 3 www.diodes.com MMSTA05/MMSTA06 © Diodes Incorporated 10 ICBO, COLLECTOR-BASE CURRENT (nA) PD, POWER DISSIPATION (mW) 200 150 100 50 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs. Ambient Temperature 50 75 100 125 TA, AMBIENT TEMPERATURE (ºC) Fig. 2 Typical Collector-Cutoff Current vs. Ambient Temperature 25 2.0 0.500 1.8 0.450 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) VCE, COLLECTOR EMITTER VOLTAGE (V) 0.1 0.01 25 0 0 1 1.6 1.4 IC = 30mA 1.2 IC = 10mA 1.0 0.8 0.6 IC = 100mA 0.4 IC = 1mA 0.400 0.350 0.300 TA = 25°C 0.250 T A = 150°C 0.200 0.150 0.100 0.050 0.2 TA = -50°C 0 0.001 0 1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current 1 1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region 0.01 1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 10,000 hFE, DC CURRENT GAIN IC = 10 IB 1,000 100 10 1 VCE = 5V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 0.1 10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 5, DC Current Gain vs. Collector Current DS30168 Rev. 9 - 2 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6, Base Emitter Voltage vs. Collector Current 2 of 3 www.diodes.com MMSTA05/MMSTA06 © Diodes Incorporated fT, GAIN BANDWIDTH PRODUCT (MHz) 1,000 100 10 1 10 IC, COLLECTOR CURRENT (mA) Fig. 7, Gain Bandwidth Product vs Collector Current 1 Ordering Information (Note 4 and 6) Device MMSTA05-7-F MMSTA06-7-F Notes: Packaging SOT-323 SOT-323 Shipping 3000/Tape & Reel 3000/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information YM K1x Date Code Key Year 1998 K1x = Product Type Marking Code, ex: K1H = MMSTA05 YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 1999 2000 2001 2002 2003 2004 K L M N P R 2005 S 2006 T Code J Month Jan Feb Mar Apr May Jun Jul Code 1 2 3 4 5 6 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X 2011 Y Nov N 2012 Z Dec D IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30168 Rev. 9 - 2 3 of 3 www.diodes.com MMSTA05/MMSTA06 © Diodes Incorporated