ZXSDS2M832 MPPS™ Miniature Package Power Solutions DUAL 60V, 1.65A SCHOTTKY DIODE COMBINATION SUMMARY Schottky Diode - VR = 60V; VF = 600mV(@1A); IC=1.65A DESCRIPTION Packaged in the new innovative 3x2 MLP (Micro Leaded Package) outline, this combination dual comprises two 60V 0.9A Schottky barrier diodes. This excellent combination provides users with highly efficient performance in applications including DC-DC converters and charging circuits. MLP832 Additionally users gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels PCB area and device placement savings Lower Package Height (0.9mm nom) Reduced component count FEATURES • Extremely Low VF, fast switching Schottky • IF= 1.65A Continuous Forward Current • 3mm x 2mm MLP APPLICATIONS • DC-DC Converters • DC-DC Modules • Mosfet gate drive circuits • Charging circuits PINOUT • Mobile Phones • Motor Control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXSDS2M832TA 7” 8mm 3000 units ZXSDS2M832TC 13” 8mm 10000 units Bottom View DEVICE MARKING • DS2 ISSUE 2 June 2003 1 SEMICONDUCTORS ZXSDS2M832 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Reverse Voltage VR 60 V Forward Voltage @ I F = 1000mA VF 600 mV Forward Current IF 1.65 A Average Forward Current D=50%, t<=300us I FAV 1.24 A Non Repetitive Forward Current t<=100us I FSM 16.8 A Non Repetitive Forward Current t<=10ms Power Dissipation at TA=25°C (a)(f) PD Linear Derating Factor Power Dissipation at TA=25°C (b)(f) PD Linear Derating Factor Power Dissipation at TA=25°C (c)(f) PD Linear Derating Factor Power Dissipation at TA=25°C (d)(f) PD Linear Derating Factor Power Dissipation at TA=25°C (d)(g) PD Linear Derating Factor Power Dissipation at TA=25°C (e)(g) PD Linear Derating Factor LIMIT UNIT 5.63 A 1.2 W 12 mW/°C 2 W 20 mW/°C 0.8 W 8 mW/°C 0.9 W 9 mW/°C 1.36 W 13.6 mW/°C 2.4 W 24 mW/°C Storage Temp, Range Tstg -55 to+150 °C Operating & Storage Temp, Range Tj -55 to+125 °C VALUE UNIT 83.3 °C/W THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(f) RJA (b)(f) RJA 51 °C/W Junction to Ambient (c)(f) RJA 125 °C/W Junction to Ambient (d)(f) RJA 111 °C/W Junction to Ambient (d)(g) RJA 73.5 °C/W Junction to Ambient (e)(g) RJA 41.7 °C/W Junction to Ambient NOTES (a) For a dual device surface mounted on 8 sq. cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the center line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device. (f) For dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight, 1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=400mW. ISSUE 2 June 2003 SEMICONDUCTORS 2 ZXSDS2M832 TYPICAL CHARACTERISTICS ISSUE 2 June 2003 3 SEMICONDUCTORS ZXSDS2M832 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Reverse Breakdown Voltage V(BR)R Forward Voltage VF 60 80 V IR = 300µA* 245 280 275 320 330 390 395 470 455 530 510 600 mV I F = 750mA* mV I F = 1000mA* 620 740 mV I F = 1500mA* 500 100 Reverse Current IR 50 Diode Capacitance CD Reverse Recovery Time t rr mV I F = 50mA* mV I F = 100mA* mV I F = 250mA* mV I F = 500mA* mV I F = 1000mA*, T A = 100°C µA V R = 45V 17 pF 12 ns f = 1MHz, V R = 25V Switched from I F = 500mA to I R = 500mA Measured at I R = 50mA NOTES * Measured under pulsed conditions ISSUE 2 June 2003 SEMICONDUCTORS 4 ZXSDS2M832 TYPICAL CHARACTERISTICS ISSUE 2 June 2003 5 SEMICONDUCTORS ZXSDS2M832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimetres Inches DIM Millimetres Inches DIM Min Max Min Max A 0.80 1.00 0.031 0.039 e 0.65 REF 0.0256 BSC A1 0.00 0.05 0.00 0.002 E 2.00 BSC 0.0787 BSC A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 0.017 0.0249 A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 L2 - 0.125 0.00 0.005 D 3.00 BSC 0.118 BSC Min Max Min Max r 0.075 BSC 0.0029 BSC D2 0.82 1.02 0.032 0.040 0° 12° 0° 12° D3 1.01 1.21 0.0397 0.0476 - - - - - © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 June 2003 SEMICONDUCTORS 6