ZETEX ZXTD3M832TC

ZXTD3M832
MPPSTM Miniature Package Power Solutions
DUAL 40V PNP LOW SATURATION TRANSISTOR
SUMMARY
PNP
VCEO= -40V; RSAT = 104m ; IC= -3A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package)
outline, these new 4th generation low saturation dual PNP transistors offer
extremely low on state losses making them ideal for use in DC-DC circuits and
various driving and power management functions.
Additionally users gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower Package Height (0.9mm nom)
Reduced component count
MLP832
FEATURES
• Low Equivalent On Resistance
• Extremely Low Saturation Voltage (-220mV max @1A)
• hFE specified up to -3A
• IC = -3A Continuous Collector Current
• 3mm x 2mm MLP
APPLICATIONS
•
•
•
•
•
DC - DC Converters
Charging circuits
Power switches
Motor control
CCFL Backlighting
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXTD3M832TA
7”
8mm
3000
ZXTD3M832TC
13”
8mm
10000
Underside view
DEVICE MARKING
• D33
ISSUE 1 - JUNE 2003
1
SEMICONDUCTORS
ZXTD3M832
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Collector-Base Voltage
V CBO
-50
V
Collector-Emitter Voltage
V CEO
-40
V
Emitter-Base Voltage
V EBO
-7.5
V
Peak Pulse Current
I CM
-4
A
Continuous Collector Current (a) (f)
IC
-3
A
Base Current
IB
-1000
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/⬚C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
PD
2.45
19.6
W
mW/⬚C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
PD
1
8
W
mW/⬚C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
PD
1.13
9
W
mW/⬚C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
PD
1.7
13.6
W
mW/⬚C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
PD
3
24
W
mW/⬚C
-55 to +150
⬚C
150
⬚C
VALUE
UNIT
Operating & Storage Temperature Range
T j :T stg
Junction Temperature
Tj
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)(f)
Junction to Ambient
Junction to Ambient (b)(f)
R ⍜JA
83.3
⬚C/W
R ⍜JA
51
⬚C/W
Junction to Ambient (b)(f)
R ⍜JA
125
⬚C/W
Junction to Ambient (d)(f)
R ⍜JA
111
⬚C/W
(d)(g)
R ⍜JA
73.5
⬚C/W
R ⍜JA
41.7
⬚C/W
Junction to Ambient
Junction to Ambient (e)(g)
NOTES
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t⬍5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all
exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual
device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight,
1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=500mW
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
2
ZXTD3M832
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2003
3
SEMICONDUCTORS
ZXTD3M832
PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown Voltage
V (BR)CBO
-50
-80
MAX. UNIT CONDITIONS
V
I C =-100␮A
Collector-Emitter Breakdown Voltage
V (BR)CEO
-40
-70
V
I C =-10mA*
Emitter-Base Breakdown Voltage
V (BR)EBO
-7.5
-8.5
V
I E =-100␮A
Collector Cut-Off Current
I CBO
-25
nA
V CB =-40V
Emitter Cut-Off Current
I EBO
-25
nA
V EB =-6V
Collector Emitter Cut-Off Current
I CES
-25
nA
V CES =-32V
Collector-Emitter Saturation Voltage
V CE(sat)
-25
-150
-195
-210
-260
-40
-220
-300
-300
-370
mV
mV
mV
mV
mV
I C =-0.1A, I B =-10mA*
I C =-1A, I B =-50mA*
I C =-1.5A, I B =-100mA*
I C =-2A, I B =-200mA*
I C =-2.5A, I B =-250mA*
Base-Emitter Saturation Voltage
V BE(sat)
-0.97
-1.05
V
-0.89
-0.95
V
I C =-2.5A, I B =-250mA*
I C =-2.5A, V CE =-2V*
Base-Emitter Turn-On Voltage
V BE(on)
Static Forward Current Transfer Ratio
h FE
300
300
180
60
12
480
450
290
130
22
I C =-10mA, V CE =-2V*
I C =-0.1A, V CE =-2V*
I C =-1A, V CE =-2V*
I C =-1.5A, V CE =2V*
I C =-3A, V CE =-2V*
Transition Frequency
fT
150
190
MHz I C =-50mA, V CE =-10V
f=100MHz
Output Capacitance
C obo
19
pF
V CB =-10A, f=1MHz
Turn-On Time
t (on)
40
25
ns
Turn-Off Time
t (off)
435
ns
V CC =-15V, I C =-0.75A
I B1 =I B2 =-15mA
*Measured under pulsed conditions. Pulse width=300␮s. Duty cycle ⱕ 2%
ISSUE 1 - JUNE 2003
SEMICONDUCTORS
4
ZXTD3M832
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2003
5
SEMICONDUCTORS
ZXTD3M832
PACKAGE OUTLINE
Controlling dimensions are in millimetres. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
Millimetres
DIM
Min
Max
Min
Max
A
0.80
1.00
0.031
0.039
e
0.65 REF
0.0256 BSC
A1
0.00
0.05
0.00
0.002
E
2.00 BSC
0.0787 BSC
A2
0.65
0.75
0.0255
0.0295
E2
0.43
0.63
0.017
A3
0.15
0.25
0.006
0.0098
E4
0.16
0.36
0.006
0.014
b
0.24
0.34
0.009
0.013
L
0.20
0.45
0.0078
0.0157
b1
0.17
0.30
0.0066
0.0118
L2
ᎏ
0.125
0.00
0.005
D
3.00 BSC
0.118 BSC
D2
0.82
1.02
0.032
0.040
D3
1.01
1.21
0.0397
0.0476
Min
Max
Inches
r
0.075 BSC
⍜
0⬚
12⬚
Min
Max
0.0249
0.0029
0⬚
12⬚
© Zetex plc 2003
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ISSUE 1 - JUNE 2003
SEMICONDUCTORS
6