MUR5005 thru MUR5020R
Silicon Super Fast
Recovery Diode
VRRM = 50 V - 200 V
IF = 50 A
Features
• High Surge Capability
• Types from 50 V to 200 V VRRM
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
MUR5005 (R)
MUR5010 (R)
MUR5020 (R)
Unit
VRRM
50
100
200
V
VRMS
35
70
140
V
VDC
50
100
200
V
Symbol
Conditions
Continuous forward current
IF
TC ≤ 125 °C
50
50
50
A
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
TC = 25 °C, tp = 8.3 ms
600
600
600
A
Operating temperature
Storage temperature
Tj
Tstg
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Symbol
Conditions
MUR5005 (R)
MUR5010 (R)
MUR5020 (R)
Unit
VF
IF = 50 A, Tj = 25 °C
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 125 °C
1
10
3
1
10
3
1
10
3
μA
mA
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
75
75
75
ns
IR
V
Recovery Time
Maximum reverse recovery
time
TRR
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MUR5005 thru MUR5020R
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2
MUR5005 thru MUR5020R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
DO- 5 (DO-203AB)
M
J
K
P
D
B
G
N
F
C
E
A
Inches
Min
Millimeters
Max
A
Min
Max
1/4 –28 UNF
B
0.669
0.687
17.19
17.44
C
-----
0.794
-----
20.16
D
-----
1.020
-----
25.91
E
0.422
0.453
10.72
11.50
F
0.115
0.200
2.93
5.08
G
-----
0.460
-----
11.68
J
-----
0.280
-----
7.00
K
0.236
-----
6.00
-----
M
-----
0.589
-----
14.96
N
-----
0.063
-----
1.60
P
0.140
0.175
3.56
4.45
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