MUR2505 thru MUR2520R Silicon Super Fast Recovery Diode VRRM = 50 V - 200 V IF = 25 A Features • High Surge Capability • Types from 50 V to 200 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage MUR2505 (R) MUR2510 (R) MUR2520 (R) Unit VRRM 50 100 200 V VRMS 35 70 140 V VDC 50 100 200 V Symbol Conditions Continuous forward current IF TC ≤ 145 °C 25 25 25 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 500 500 500 A Operating temperature Storage temperature Tj Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol Conditions MUR2505 (R) MUR2510 (R) MUR2520 (R) Unit VF IF = 25 A, Tj = 25 °C VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 125 °C 1 10 3 1 10 3 1 10 3 μA mA IF=0.5 A, IR=1.0 A, IRR= 0.25 A 75 75 75 ns IR V Recovery Time Maximum reverse recovery time TRR www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MUR2505 thru MUR2520R www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 2 MUR2505 thru MUR2520R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. DO- 4 (DO-203AA) M J P D B G N C E F A Inches Min Millimeters Max A Min Max 10-32 UNF B 0.424 0.437 10.77 11.10 C ----- 0.505 ----- 12.82 D ------ 0.800 ----- 20.30 E 0.453 0.492 11.50 12.50 F 0.114 0.140 2.90 3.50 G ----- 0.405 ----- 10.29 J ----- 0.216 ----- 5.50 M ----- φ0.302 ----- φ7.68 N 0.031 0.045 0.80 1.15 P 0.070 0.79 1.80 2.00 www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 3