MURTA20020 thru MURTA20040R
Silicon Super Fast
Recovery Diode
VRRM = 200 V - 400 V
IF(AV) = 200 A
Features
• High Surge Capability
• Types from 200 V to 400 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURTA20020(R)
MURTA20040(R)
Unit
400
V
Repetitive peak reverse voltage
VRRM
200
RMS reverse voltage
VRMS
141
283
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
200
-55 to 150
-55 to 150
400
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MURTA20020(R)
MURTA20040(R)
Unit
Average forward current (per pkg)
IF(AV)
TC = 100 °C
200
200
A
Peak forward surge current (per leg)
IFSM
tp = 8.3 ms, half sine
2000
2000
A
Maximum instantaneous forward
voltage (per leg)
VF
IFM = 100 A, Tj = 25 °C
1.0
1.3
V
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
IR
Tj = 25 °C
25
25
μA
Tj = 125 °C
5
5
mA
Maximum reverse recovery time (per
leg)
Trr
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
100
100
ns
0.45
0.45
°C/W
Parameter
Thermal characteristics
Maximum thermal resistance, junction case (per leg)
RΘJC
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MURTA20020 thru MURTA20040R
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MURTA20020 thru MURTA20040R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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