MURTA60060 thru MURTA600120R Silicon Super Fast Recovery Diode VRRM = 600 V - 1200 V IF(AV) = 600 A Features • High Surge Capability • Types from 600 V to 1200 V VRRM Heavy Three Tower Package • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA60060(R) MURTA600120(R) Unit 1200 V Repetitive peak reverse voltage VRRM 600 RMS reverse voltage VRMS 424 --- V DC blocking voltage Operating temperature Storage temperature VDC Tj Tstg 600 -55 to 150 -55 to 150 1200 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Symbol Conditions MURTA60060(R) MURTA600120(R) Unit Average forward current (per pkg) IF(AV) TC = 100 °C 600 600 A Peak forward surge current (per leg) IFSM tp = 8.3 ms, half sine 4400 4400 A Maximum instantaneous forward voltage (per leg) VF IFM = 300 A, Tj = 25 °C 1.7 2.6 V Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C 25 25 μA Tj = 125 °C 5 5 mA Maximum reverse recovery time (per leg) Trr IF=0.5 A, IR=1.0 A, IRR= 0.25 A 280 280 ns 0.28 0.28 °C/W Parameter Thermal characteristics Maximum thermal resistance, junction case (per leg) RΘJC www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 1 MURTA60060 thru MURTA600120R MURTA60060(R) Figures: www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 2 MURTA60060 thru MURTA600120R MURTA600120(R) Figures: www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 3 MURTA60060 thru MURTA600120R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/ 4