MBRF50020 thru MBRF50040R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF(AV) = 500 A Features • High Surge Capability • Types from 20 V to 40 V VR TO-244AB Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol Conditions MBRF50020(R) MBRF50030(R) MBRF50035(R) MBRF50040(R) Unit VRRM 20 30 35 40 V VRMS 14 21 25 28 V VDC Tj Tstg 20 -55 to 150 -55 to 150 30 -55 to 150 -55 to 150 35 -55 to 150 -55 to 150 40 -55 to 150 -55 to 150 V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified MBRF50020(R) MBRF50030(R) MBRF50035(R) MBRF50040(R) Symbol Conditions IF(AV) TC = 125 °C 500 500 500 500 A IFSM tp = 8.3 ms, half sine 3500 3500 3500 3500 A Maximum forward voltage (per leg) VF IFM = 250 A, Tj = 25 °C 0.75 0.75 0.75 0.75 V Reverse current at rated DC blocking voltage (per leg) IR Tj = 25 °C Tj = 100 °C Tj = 150 °C 1 10 50 1 10 50 1 10 50 1 10 50 mA 0.30 0.30 0.30 0.30 °C/W Parameter Average forward current (per pkg) Peak forward surge current (per leg) Unit Thermal characteristics Thermal resistance, junctioncase (per leg) RΘJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBRF50020 thru MBRF50040R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBRF50020 thru MBRF50040R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3