MBRT20045 thru MBRT200100R
Silicon Power
Schottky Diode
VRRM = 45 V - 100 V
IF(AV) = 200 A
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Conditions
MBRT20045(R) MBRT20060(R) MBRT20080(R) MBRT200100(R) Unit
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
45
60
80
100
V
RMS reverse voltage
VRMS
32
42
56
70
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
60
-55 to 150
-55 to 150
80
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
V
°C
°C
45
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRT20045(R) MBRT20060(R) MBRT20080(R) MBRT200100(R) Unit
Average forward current (per
pkg)
IF(AV)
TC = 125 °C
200
200
200
200
A
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
1500
1500
1500
1500
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 100 A, Tj = 25 °C
0.70
0.75
0.84
0.84
V
Maximum instantaneous
reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
30
1
10
30
1
10
30
1
10
30
mA
0.45
0.45
0.45
0.45
°C/W
Thermal characteristics
Thermal resistance, junctioncase (per leg)
RΘJC
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MBRT20045 thru MBRT200100R
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MBRT20045 thru MBRT200100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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