Datasheet

Product is End of Life 12/2014
SiP42104
Vishay Siliconix
H-Bridge Driver and Pulse Width Controller
for Digital Camera Micro Modules
DESCRIPTION
FEATURES
The SiP42104 is a 250 mA integrated H-bridge driver and
programmable output-pulse-width controller. It offers a
complete and cost-effective solution for micro camera focus
module applications such as shutter, iris, lens cover and
Infrared filter drivers. The output voltage direction of the
H-bridge is set by the presence of the rising or falling edge
at the digital interface pin IN and the corresponding
on-duration is set by the RC pin time constant. During
time-out, the input deglitcher-latch is transparent to
input noise durations of less than 300 ns. Internal
breakbefore-make prevents output shoot-through. When the
H-bridge turns off after time-out, the lower N-channel
MOSFETs are turned on for a short interval to prevent
turning on their body diodes. The low IN threshold logic and
the sub micro-amp steady state quiescent current is ideal for
low battery applications.
The SiP42104 is offered in the ultra-small lead (Pb)-free
SC-89 package (SOT666) and it is rated over the industrial
ambient range of - 40 °C to + 85 °C.
•
•
•
•
•
•
•
•
•
Low supply range: 2.3 to 4.2 V
Low RH: 0.85 Ω at 2.8 V and 150 mA
Output current up to 250 mA
RoHS
COMPLIANT
Output voltage direction depends on input
Rising or falling edges
Break before make cross-over protection
300 ns de-glitch circuit
Programmable RC timer to set output pulse width
Sub micro-amp quiescent current
SC89-6L package (1.6 x 1.6 x 0.6 mm)
APPLICATIONS
•
•
•
•
Digital camera
Cell phones
Small DC motor control
Dual-stage latchable relay driver
TYPICAL APPLICATION CIRCUIT
VDD
INPUT
BUFFER
AND
DEGLITCHER
IN
OUT2
SW2
1.75 µA
SW1
RC
H-BRIDGE
DRIVER
AND
BBM
TIMER
AND
PULSE WIDTH
CONTROLLER
M1
M3
M2
M4
LLOAD
RLOAD
R
C
OUT1
GND
Figure 1.
Document Number: 74633
S-80224-Rev. C, 04-Feb-08
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1
SiP42104
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Supply Input Voltage (VDD)
- 0.3 to 4.5
Input Voltage (VIN )
- 0.3 to 4.5
Output DC Voltage (VOUT1, VOUT2)
- 0.3 to 4.5
Maximum Pulsed Current (IOUT1, IOUT1)
ESD Rating (HBM)
250
Unit
V
mA
5.5
kV
Thermal Resistance (θJA)
465
°C/W
Power Dissipationb (PD)
172
mW
Maximum Junction Temperature (TJM)
150
a
Lead Temperaturec (TL)
Storage Temperature (TS)
260
°C
- 65 to 150
Notes:
a. Soldered down to PCB 1 inch2 1 oz copper.
b. Derate - 2.15 mW/°C above 70 °C.
c. Soldering 5 s.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
VDD
IOUT
Limit
Unit
2.3 to 4.2
V
± 150
mA
10 K to 500 K
Ω
Timing Capacitor
10 to 220
nF
Output Inductive Load L
10 to 550
µH
DCR Of Output Inductive Load
15 to 30
Ω
Timing Resistor
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Document Number: 74633
S-80224-Rev. C, 04-Feb-08
SiP42104
Vishay Siliconix
SPECIFICATIONS
Parameter
Symbol
Test Conditions
VDD = 2.8 V, TA = - 40 to 85 °C
unless otherwise noted.
Typical values are at TA = 25 °C
Temp.
Min.a
Full
2.3
Typ.b
Max.a
Unit
4.2
V
H-Bridge Section
Supply Voltage Range
VDD
Operating Current
IDDQ
IN = RC = 0 V
Full
H-Bridge Resistancec
RH
IOUT = 150 mA
Full
RC Time-out Voltage
V1
Falling edge set by RC
Room
Fast Discharge Voltage
V2
Falling edge set by R1C
Room
RC Pulse Width
TRC
R = 500 K, C = 100 nF
Room
IN Logic High
VTHI
Rising, M1/M4 on
Full
IN Logic Low
VTLO
Falling, M1/M4 off
Full
0.82
Hysteresis
VHYS
VTHI - VTLO
Full
0.28
IPD
VIN = VDD
Room
1.75
µA
ns
IN Pull- Down current
5
µA
0.85
1.6
Ω
670
756
840
480
644
730
65
mV
ms
1.6
Break-Before-Make
TBBM
Room
50
Trigger Edges
TEDGE
Input rise and fall
Room
< 0.1
Trigger Pulse Duration
TIN
Input minimum pulse width
Room
≥2
Trigger Response Time
TRT
Delay from IN to output
Room
0.6
0.5
V
µs
Notes:
a. The algebraic convention whereby the most negative value is a minimum and most positive is a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. RH is the RDS (ON) of M1 + M4 or M2 + M3.
PIN CONFIGURATION
OUT1
VDD
IN
OUT2
OUT2
6
1
OUT1
GND
GND
5
2
VDD
RC
4
3
IN
RC
BOTTOM VIEW
TOP VIEW
SC89 PACKAGE
Figure 2.
PIN DESCRIPTION
Pin Number
Name
1
2
OUT1
VDD
3
IN
Function
H-Bridge Output 1
Supply Voltage
Input Edge Trigger Direction Control. Positive Edge Sets OUT1 High and OUT2 Low.
Negative Edge Sets OUT2 High and OUT1 Low.
Pulse Width Timing Setting
4
RC
5
GND
Ground Connection
6
OUT2
H-Bridge Output 2
Document Number: 74633
S-80224-Rev. C, 04-Feb-08
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SiP42104
Vishay Siliconix
ORDERING INFORMATION
Part Number
Marking
Temperature Range
Package
SiP42104DX-T1-E3b
HLa
- 40 °C to 85 °C
SC89-6L (SOT666)
Notes:
a. “H“ is part identifier and “L” is lot and date code identifier.
b. T1 Tape and Reel orientation with pin1 bottom left hand corner of cavity.
FUNCTIONAL BLOCK DIAGRAM
VDD
INPUT
BUFFER
IN
AND
OUT2
SW2
DEGLITCHER
1.75 µA
SW1
RC
H-BRIDGE
DRIVER
+
BBM
TIMER
AND
PULSE WIDTH
CONTROLLER
M1
M2
M3
M4
OUT1
GND
Figure 3.
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Document Number: 74633
S-80224-Rev. C, 04-Feb-08
SiP42104
Vishay Siliconix
TIMING DIAGRAM
TEDGE < 100 ns
TEDGE < 100 ns
T > 2 µs
SS
Input Control Logic
Input Control Logic
Output Current
VOUT2
VOUT1
TRC = 1.3 x RC
TRC = 1.3 x RC
Figure 4.
DETAILED OPERATIONAL DESCRIPTION
SiP42104 is an easy to use integrated H-bridge driver and
programmable output pulse width controller IC intended for
digital camera micro module focus mode applications. The
IC is designed to drive a solenoid of several hundred
micro-Henrys and operates over the supply range of 2.3 to
4.2 V. Both H-bridge output can source and sink up to
250 mA. The break-before-make delays prevents
shoot-through via M1 to M2 or M3 to M4 in the H-bridge and
is guaranteed by design.
In the absence of any edge transitions at the input pin, the IC
is in the power-down mode with the H-bridge outputs at high
impedance drawing only sub micro-amp of leakage current
from the supply.
The input pin is CMOS logic level and has typical 1.75 µA
pull-down current, the input pin is buffered by a Schmitt
trigger with the threshold level of 1.1 V and typical hysteresis
of 280 mV. A logic transition closes SW2 and initiates the
H-Bridge output turn-on for duration set by the external RC
time constant. The logic level transition is latched in the
device and this logic level transition determines which of the
H-Bridge output MOSFETs turns on. If the logic transition is
rising from ground to VDD, with the high condition being
present for at least 2 µs, then M1 and M4 will turn on, M2 and
M3 will turn off. This means that OUT1 will go high and OUT2
will go low. Conversely, a falling logic transition is from VDD
to ground, with the low level being present for 2 µs, will turn
on M2 and M3, M1 and M4 will turn off. Once the input
transition is latched, SiP42104 will ignore any input spurious
transition until the RC pin time out is completed. An internal
deglitch filter following the input buffer prevents SiP42104
from being accidentally triggered by the input pulse less than
300 ns duration.
Document Number: 74633
S-80224-Rev. C, 04-Feb-08
A positive edge transition on the input pin also initiates
SiP42104 to charge the RC pin to VDD via SW1. This
pre-charge period lasts for approximately 30 µs. When the
pre-charge period is completed, SW1 will turn off and the
external capacitor begins to discharge via the external
resistor. The timer and pulse width controller sense the
voltage on RC pin. When the voltage on the RC pin falls to
V1 (0.27 x VDD). The timer and pulse width controller
terminate the timeout and turn off the relevant H-bridge
outputs. This yields and output pulse width given by:
TOUTPUT = 1.3 x RC
SiP42104 H-bridge output typically drives an inductive load.
When output are turned off after the RC timeout, the current
will still be flowing in the inductive load. To prevent the load
current from forward biasing the body diodes of the output
MOSFETs, both H-bridge low-side MOSFETs M2 and M4
will turn on briefly to allow the inductive load current to
discharge to zero. When the voltage on the RC pin has fallen
to V2 (0.23 x VDD). This yields a discharge time:
TDISCHARGE = 0.13 x C x R1
Where R1 is the built-in resistor of 1.1 kΩ.
Following this discharge time period, SW2 and all H-bridge
output MOSFETs are turned off. SiP42104 powers down to
its low quiescent current state. SiP42104 will remain in this
state until the next input transition logic applied to the input
pin to wake up.
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SiP42104
Vishay Siliconix
TYPICAL CHARACTERISTICS
1.3
1.15
TA = 25 °C
1.10
1.2
1.1
1.00
VDD = 2.8 V
I O = 150 mA
RH (%)
RH (%)
1.05
0.95
1.0
0.90
0.9
0.85
0.80
2.3
2.8
3.3
3.8
0.8
- 40
4.3
- 15
10
VDD (V)
35
60
85
110
135
Temperature (°C)
Normalized RH vs. Temperature
Normalized RH vs. VDD
1.2
1.4
VTHI
TA = 25 °C
Rising
VDD = 2.8 V
1.3
1.1
1.2
Rising
VTHI
VTLO
1.0
1.0
V
V
1.1
Falling
0.9
0.9
Falling
0.8
0.8
VTLO
0.7
0.6
2.3
2.8
3.3
3.8
0.7
- 40
4.3
- 15
10
VDD (V)
35
60
85
110
135
Temperature (°C)
IN Threshold Voltage vs. VDD
IN Threshold Voltage vs. Temperature
6
4.5
TA = 25 °C
4.0
5
3.5
4
VDD = 4.2 V
IPD (µA)
IPD (µA)
3.0
2.5
2.0
3
2
VDD = 2.8 V
1.5
1
1.0
0.5
2.3
VDD = 2.3 V
2.8
3.3
VDD (V)
IPD Current vs. VDD
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3.8
4.3
0
- 40
- 15
10
35
60
85
110
135
Temperature (°C)
IPD Current vs. Temperature
Document Number: 74633
S-80224-Rev. C, 04-Feb-08
SiP42104
Vishay Siliconix
TYPICAL CHARACTERISTICS
1.040
1.07
1.035
1.06
1.030
1.05
TA = 25 °C
VDD = 2.8 V
1.020
RH (%)
RH (%)
1.025
1.015
TA = 25 °C
VDD = 2.3 V
1.04
1.03
1.010
1.02
1.005
1.01
1.000
0.995
100
125
150
175
200
225
1.00
100
250
125
150
175
200
225
250
IH (mA)
IH (mA)
Normalized RH vs. IH
Normalized RH vs. IH
1.2
1.4
1.1
1.2
0.9
RH (Ω)
RH (Ω)
1.0
0.8
1.0
0.8
0.7
0.6
0.6
0.5
2.0
2.5
3.0
3.5
VDD (V)
RH vs. VDD
Document Number: 74633
S-80224-Rev. C, 04-Feb-08
4.0
4.5
0.4
- 40
- 15
10
35
60
85
110
135
Temperature (°C)
RH vs. Temperature
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SiP42104
Vishay Siliconix
TYPICAL WAVEFORMS
VRC (500 mV/div)
VRC (500 mV/div)
VOUT (1 V/div)
VIN (1 V/div)
0.27 x VDD
VOUT (1 V/div)
IOUT (50 mA/div)
10 ms/div
VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH
Steady State Operation
0.23 x VDD
5 ms/div
VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH
RC Threshold Voltage
VIN (500 mV/div)
VIN (500 mV/div)
VOUT (1 V/div)
VOUT (1 V/div)
200 ns/div
VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH
Input Rising Edge Trigger Response Time
VOUT (1 V/div)
200 ns/div
VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH
Input Falling Edge Trigger Response Time
VIN (500 mV/div)
VRC (500 mV/div)
IOUT (50 mA/div)
VOUT (1 V/div)
IOUT (50 mA/div)
VIN (500 mV/div)
VRC (500 mV/div)
2 µs/div
VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH
Input Rising Edge Triggering Operation
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2 µs/div
VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH
Input Falling Edge Triggering Operation
Document Number: 74633
S-80224-Rev. C, 04-Feb-08
SiP42104
Vishay Siliconix
TYPICAL WAVEFORMS
VIN (500 mV/div)
VOUT (1 V/div)
IOUT (50 mA/div)
IOUT (50 mA/div)
VOUT (1 V/div)
VRC (500 mV/div)
VRC (500 mV/div)
5 µs/div
VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH
Inductive Discharge OUT1 to OUT2
VOUT (1 V/div)
50 ns/div
VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH
Rising Edge TBBM
VIN (500 mV/div)
5 µs/div
VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH
Inductive Discharge OUT2 to OUT1
VOUT (1 V/div)
50 ns/div
VIN = 2.8 V, RLOAD = 18 Ω, LLOAD = 80 µH
Falling Edge TBBM
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74633.
Document Number: 74633
S-80224-Rev. C, 04-Feb-08
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Package Information
Vishay Siliconix
L3
SCĆ89: 6ĆLEAD (SOTĆ666)
D
A
b
L1
e
L2
E
E1
B
Pin 1
0.10 M
C
A
B
b1
e1
q (4 )
A3
A
NOTES:
1. All dimensions are in millimeters.
2.
Package outline exclusive of mold flash and metal burr.
3.
Package outline inclusive of plating.
4.
Maximum webbing flash remain 0.075 mm.
C
MILLIMETERS*
Dim
A
A3
b
b1
D
E
E1
e
e1
L1
L2
L3
q
INCHES
Min
Nom
Max
Min
Nom
Max
0.56
–
0.60
0.022
–
0.024
0.13
0.17
0.18
0.005
0.006
0.007
0.17
–
0.25
0.006
–
0.010
–
0.27
0.34
–
0.011
0.013
1.50
1.66
1.70
0.059
0.065
0.067
1.50
1.65
1.70
0.059
0.065
0.067
1.10
1.20
1.30
0.043
0.047
0.051
0.50 BSC
0.020 BSC
0.20
–
–
0.008
–
–
0.11
0.19
0.26
0.004
0.007
0.010
0.10
0.23
0.30
0.004
0.009
0.012
0.05
0.10
–
0.002
0.004
–
8_
10_
12_
8_
10_
12_
ECN: S-52444—Rev. D, 28-Nov-05
DWG: 5891
*Use millimeters as the primary measurement
Document Number: 72067
28-Nov-05
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000