VISHAY SIP32413

SiP32413, SiP32414
Vishay Siliconix
Dual 2 A, 1.2 V, Slew Rate Controlled Load Switch
DESCRIPTION
FEATURES
SiP32413 and SiP32414 are slew rate controlled load
switches that is designed for 1.1 V to 5.5 V operation.
The devices guarantee low switch on-resistance at 1.2 V
input. They feature a controlled soft-on slew rate of typical
150 µs that limits the inrush current for designs of capacitive
load or noise sensitive loads.
The devices feature a low voltage control logic interface (On/
Off interface) that can interface with low voltage digital
control without extra level shifting circuit. The SiP32414 also
integrates output discharge switches that enable fast
shutdown load discharge. When the switches are off, they
provide the reverse blocking to prevent high current flowing
into the power source.
Both the SiP32413 and SiP32414 are available in TDFN8
2 mm x 2mm package. Each switch in each device can
support over 2 A of continuous current.
•
•
•
•
•
•
1.1 V to 5.5 V operation voltage range
62 mΩ typical from 2 V to 5 V
Low RON down to 1.2 V
Slew rate controlled turn-on: 150 µs at 3.6 V
Fast shutdown load discharge for SiP32414
Low quiescent current
< 1 µA when disabled
6.7 µA at VIN = 1.2 V
• Switch off reversed blocking
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
•
•
•
•
•
•
Cellular phones
Portable media players
Digital camera
GPS
Computers
Portable instruments and healthcare devices
TYPICAL APPLICATION CIRCUIT
VIN
IN
OUT
VOUT
SiP32413, SiP32414
(for one switch)
C IN
4.7 µF
C OUT
0.1 µF
CNTRL
CNTRL
GND
GND
GND
Figure 1 - SiP32413, SiP32414 Typical Application Circuit
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
www.vishay.com
1
SiP32413, SiP32414
Vishay Siliconix
ORDERING INFORMATION
Temperature Range
Package
Marking
Part Number
- 40 °C to 85 °C
TDFN8
2 mm x 2 mm
AA
SiP32413DNP-T1-GE4
AB
SiP32414DNP-T1-GE4
Note:
x = Lot Code
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Supply Input Voltage (VIN)
- 0.3 to 6
Enable Input Voltage (VEN)
- 0.3 to 6
Output Voltage (VOUT)
Unit
V
- 0.3 to VIN + 0.3
Maximum Continuous Switch Current (IMAX)
2.4
Maximum Pulsed Current (IDM) VIN
(Pulsed at 1 ms, 10 % Duty Cycle)
A
3
ESD Rating (HBM)
4000
V
Junction Temperature (TJ)
- 40 to 125
°C
Thermal Resistance (θJA)a
84
°C/W
Power Dissipation (PD)a, b
655
mW
Notes:
a. Device mounted with all leads and power pad soldered or welded to PC board, see PCB layout.
b. Derate 11.9 mW/°C above TA = 70 °C, see PCB layout.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Limit
Unit
Input Voltage Range (VIN)
1.1 to 5.5
V
Operating Temperature Range
- 40 to 85
°C
www.vishay.com
2
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
SiP32413, SiP32414
Vishay Siliconix
SPECIFICATIONS
Parameter
Operating Voltagec
Quiescent Current
Symbol
VIN
IQ
Test Conditions Unless Specified
VIN = 5.0 V, TA = - 40 °C to 85 °C
(Typical values are at TA = 25 °C)
Limits
- 40 °C to 85 °C
Min.a
1.1
Typ.b
-
Max.a
5.5
VIN = 1.2 V, CNTRL = active
-
6.7
14
VIN = 1.8 V, CNTRL = active
-
14
24
VIN = 2.5 V, CNTRL = active
-
25
40
VIN = 3.6 V, CNTRL = active
-
40
60
VIN = 4.3 V, CNTRL = active
-
52
75
VIN = 5.0 V, CNTRL = active
-
71
99
CNTRL = inactive, OUT = open
-
-
1
Off Supply Current
IQ(off)
Off Switch Current
IDS(off)
CNTRL = inactive, OUT = 0
-
-
1
IRB
VOUT = 5.5 V, VIN = 1.2 V,VEN = inactive
-
-
10
VIN = 1.2 V, IL = 100 mA, TA = 25 °C
-
66
76
Reverse Blocking Current
On-Resistance
RDS(on)
VIN = 1.8 V, IL = 100 mA, TA = 25 °C
-
62
72
VIN = 2.5 V, IL = 100 mA, TA = 25 °C
-
62
72
VIN = 3.6 V, IL = 100 mA, TA = 25 °C
-
62
72
VIN = 4.3 V, IL = 100 mA, TA = 25 °C
-
62
72
72
VIN = 5.0 V, IL = 100 mA, TA = 25 °C
On-Resistance Temp.-Coefficient
CNTRL Input Low Voltagec
-
62
-
3900
-
VIN = 1.2 V
-
0.5
0.3
VIN = 1.8 V
-
0.72
0.4d
VIN = 2.5 V
-
0.87
0.5d
VIN = 3.6 V
-
1.0
0.6d
VIN = 4.3 V
-
1.08
0.7d
VIN = 5.0 V
-
TCRDS
VIL
Unit
V
µA
mΩ
ppm/°C
1.15
0.8d
VIN = 1.2 V
0.9
d
0.54
-
VIN = 1.8 V
1.2d
0.78
-
VIN = 2.5 V
1.4
d
0.96
-
VIN = 3.6 V
1.6d
1.2
-
VIN = 4.3 V
1.7d
1.32
-
VIN = 5.0 V
1.8
1.45
-
ISINK
VEN = 5.5 V
-
-
1
µA
Output Pulldown Resistance
RPD
CNTRL = inactive, TA = 25 °C
(SiP32414 only)
-
217
280
Ω
-
140
210
VIN = 3.6 V, RLOAD = 10 Ω, TA = 25 °C
80
150
220
-
0.27
1
CNTRL Input High Voltagec
EN Input Leakage
VIH
Output Turn-On Delay Time
td(on)
Output Turn-On Rise Time
t(on)
Output Turn-Off Delay Time
td(off)
V
µs
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For VIN outside this range consult typical EN threshold curve.
d. Not tested, guarantee by design.
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
www.vishay.com
3
SiP32413, SiP32414
Vishay Siliconix
PIN CONFIGURATION
OUT1 8
1
IN1
GND 7
2
CNTRL1
GND 6
3
CNTRL2
OUT2 5
4
IN2
Bottom View
Figure 2 - TDFN8 2 mm x 2 mm Package
PIN DESCRIPTION
Pin Number
Name
1
IN1
Function
2
CNTRL1
Side 1 control input
3
CNTRL2
Side 2 control input
4
IN2
5
OUT2
This pin is the side 2 n-channel MOSFET source connection. Bypass to ground throught a 0.1 µF capacitor
6
GND
Ground connection
7
GND
Ground connection
8
OUT1
This pin is the side 1 n-channel MOSFET source connection. Bypass to ground throught a 0.1 µF capacitor
This pin is the side 1 n-channel MOSFET drain connection. Bypass to ground through a 2.2 µF capacitor
This pin is the side 2 n-channel MOSFET drain connection. Bypass to ground through a 2.2 µF capacitor
TRUTH TABLE SiP32413
TRUTH TABLE SiP32414
CNTRL1
CNTRL2
SW1
SW2
CNTRL1
CNTRL2
SW1
SW2
0
0
ON
OFF
0
0
OFF
OFF
0
1
ON
ON
0
1
OFF
ON
1
0
OFF
OFF
1
0
ON
OFF
1
1
OFF
ON
1
1
ON
ON
TYPICAL CHARACTERISTICS internally regulated, 25 °C, unless otherwise noted
100
90
80
IQ - Quiescent Current (µA)
IQ - Quiescent Current (µA)
80
60
40
20
VIN = 5 V
70
60
50
VIN = 3.6 V
40
30
20
VIN = 1.2 V
10
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VIN (V)
Figure 3 - Quiescent Current vs. Input Voltage
www.vishay.com
4
0
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 4 - Quiescent Current vs. Temperature
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
SiP32413, SiP32414
Vishay Siliconix
TYPICAL CHARACTERISTICS internally regulated, 25 °C, unless otherwise noted
100
0.7
SiP32413
SiP32413
IQ(off) - Off Switch Current (nA)
IQ(off) - Off Supply Current (nA)
0.6
0.5
0.4
0.3
0.2
10
1
VIN = 5 V
VIN = 3.6 V
0.1
VIN = 1.2 V
0.01
0.1
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.001
- 40
5.5
- 20
0
VIN (V)
40
60
80
100
Figure 6 - SiP32414 Off Supply Current vs. Temperature
Figure 5 - SiP32413 Off Supply Current vs. VIN
1000
1.4
SiP32414
SiP32414
IQ(OFF) - Off Supply Current (nA)
1.2
IQ(OFF) - Off Supply Current (nA)
20
Temperature (°C)
1.0
0.8
0.6
0.4
0.2
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
100
10
VIN = 5 V
1
VIN = 3.6 V
0.1
0.01
VIN = 1.2 V
0.001
- 40
5.5
- 20
0
20
40
60
80
100
Temperature (°C)
VIN (V)
Figure 8 - SiP32414 Off Supply Current vs. Temperature
Figure 7 - SiP32414 Off Supply Current vs. VIN
1.0
1000
0.8
IDS(on) - Off Switch Current (nA)
IDS(off) - Off Switch Current (nA)
0.9
0.7
0.6
0.5
0.4
0.3
0.2
100
10
VIN = 5 V
1
VIN = 3.6 V
0.1
0.01
VIN = 1.2 V
0.1
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VIN (V)
Figure 9 - Off Swith Current vs. Input Voltage
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
0.001
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 10 - Off Swith Current vs. Temperature
www.vishay.com
5
SiP32413, SiP32414
Vishay Siliconix
72
75
70
70
RDS - On-Resistance (mΩ)
RDS - On-Resistance (mΩ)
TYPICAL CHARACTERISTICS internally regulated, 25 °C, unless otherwise noted
IO = 2 A
68
IO = 1.5 A
IO = 1 A
66
64
62
IO = 0.5 A
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
60
55
50
40
- 40
5.5
- 20
0
40
60
80
VIN (V)
Temperature (°C)
Figure 12 - RDS(on) vs. Temperature
100
235
500
450
RPD - Output Pulldown Resistance (Ω)
SiP32414 only
VIN = VOUT
400
350
300
250
200
150
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
SiP32414 only
VOUT = VIN = 5 V
230
225
220
215
210
205
- 40
100
5.5
- 20
0
VIN (V)
40
60
80
100
Figure 14 - SiP32414 Output Pull Down vs. Temperature
1000
1000
VIN = 1.2 V
VOUT = 5 V
VCNTRL = inactive
VIN = 1.2 V
VCNTRL = inactive
IIN - Input Current (nA)
100
20
Temperature (°C)
Figure 13 - SiP32414 Output Pull Down vs. Input Voltage
IIN - Input Current (nA)
20
Figure 11 - RDS(on) vs. Input Voltage
550
RPD - Output Pulldown Resistance (Ω)
65
45
IO = 0.1 A
60
1.0
IO = 0.1 A
VIN = 5 V
10
1
100
0.1
0.01
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VOUT (V)
Figure 15 - Reverse Blocking Current vs. Output Voltage
www.vishay.com
6
10
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 16 - Reverse Blocking Current vs. Temperature
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
SiP32413, SiP32414
Vishay Siliconix
1.6
160
1.5
150
1.4
td(on) - Turn-On Delay Time (µs)
CNTRL - Threshold Voltage (V)
TYPICAL CHARACTERISTICS internally regulated, 25 °C, unless otherwise noted
1.3
1.2
1.1
1.0
0.9
VIH
0.8
VIL
0.7
0.6
VIN = 5 V
CL = 0.1 µF
RL = 10 Ω
140
130
120
110
100
90
80
70
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
60
- 40
5.5
- 20
0
VIN (V)
80
100
0.22
VIN = 5 V
CL = 0.1 µF
RL = 10 Ω
td(off) - Turn-Off Delay Time (µs)
t(on) - Turn-On Rise Time (µs)
60
Figure 18 - Turn-On Delay Time vs. Temperature
220
200
40
Temperature (°C)
Figure 17 - CNTRL Threshold Voltage vs. Input Voltage
210
20
190
180
170
160
150
VIN = 5 V
CL = 0.1 µF
RL = 10 Ω
0.20
0.18
0.16
0.14
0.12
140
130
- 40
- 20
0
20
40
60
80
100
0.10
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Figure 19 - Rise Time vs. Temperature
Figure 20 - Turn-Off Delay Time vs. Temperature
TYPICAL WAVEFORMS
VCNTRL
(2 V/div.)
VCNTRL (2 V/div.)
RL = 7.2 Ω
CL = 0.1 µF
RL = 7.2 Ω
CL = 0.1 µF
VOUT (1 V/div.)
IOUT (200 mA/div.)
VOUT (1 V/div.)
IOUT (200 mA/div.)
Time (100 µs/div.)
Time (1 µs/div.)
Figure 21 - SiP32413 Channel 1 Switching
(VIN = 3.6 V, RL = 7.2 Ω)
Figure 22 - SiP32413 Channel 1 Turn-Off
(VIN = 3.6 V, RL = 7.2 Ω)
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
www.vishay.com
7
SiP32413, SiP32414
Vishay Siliconix
VCNTRL
(2 V/div.)
VCNTRL (2 V/div.)
RL = 10 Ω
CL = 0.1 µF
RL = 10 Ω
CL = 0.1 µF
VOUT (2 V/div.)
VOUT (2 V/div.)
IOUT (200 mA/div.)
IOUT (200 mA/div.)
Time (100 µs/div.)
Time (1 µs/div.)
Figure 23 - SiP32413 Channel 1 Switching
(VIN = 5 V, RL = 10 Ω)
Figure 24 - SiP32413 Channel 1 Turn-Off
(VIN = 5 V, RL = 10 Ω)
VCNTRL (2 V/div.)
VCNTRL
(2 V/div.)
RL = 7.2 Ω
CL = 0.1 µF
RL = 7.2 Ω
CL = 0.1 µF
VOUT (1 V/div.)
IOUT (200 mA/div.)
VOUT (1 V/div.)
IOUT (200 mA/div.)
Time (1 µs/div.)
Time (100 µs/div.)
Figure 25 - SiP32413 Channel 2 and SiP32414 Switching
(VIN = 3.6 V, RL = 7.2 Ω)
VCNTRL
(2 V/div.)
Figure 26 - SiP32413 Channel 2 and SiP32414 Turn-Off
(VIN = 3.6 V, RL = 7.2 Ω)
VCNTRL (2 V/div.)
RL = 10 Ω
CL = 0.1 µF
RL = 10 Ω
CL = 0.1 µF
VOUT (2 V/div.)
VOUT (2 V/div.)
IOUT (200 mA/div.)
IOUT (200 mA/div.)
Time (100 µs/div.)
Time (1 µs/div.)
Figure 27 - SiP32413 Channel 2 and SiP32414 Switching
(VIN = 5 V, RL = 10 Ω)
Figure 28 - SiP32413 Channel 2 and SiP32414 Turn-Off
(VIN = 5 V, RL = 10 Ω)
www.vishay.com
8
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
SiP32413, SiP32414
Vishay Siliconix
BLOCK DIAGRAM
Reverse
Blocking
IN1
CNTRL1
OUT1
Logic
Control
Charge
Pump
Turn On
Slew Rate
Control
+
GND
+
CNTRL2
Logic
Control
Charge
Pump
Turn On
Slew Rate
Control
IN2
SiP32414
only
OUT2
Reverse
Blocking
Figure 29 - Functional Block Diagram
PCB LAYOUT
Top
Bottom
Figure 26 - PCB Layout for TDFN8 2 mm x 2 mm (board size: 1.2 inch x 1.3 inch)
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
www.vishay.com
9
SiP32413, SiP32414
Vishay Siliconix
DETAILED DESCRIPTION
SiP32413 and SiP32414 are dual n-channel power
MOSFETs designed as high side load switch with slew rate
control to prevent in-rush current. Once enable the device
charge pumps the gate of the power MOSFET to 5 V gate to
source voltage while controlling the slew rate of the turn on
time. The mostly constant gate to source voltage keeps the
on resistance low through out the input voltage range. For
SiP32414, when disable the output discharge circuit turns on
to help pull the output voltage to ground more quickly. For
both parts, in disable mode, the reverse blocking circuit is
activated to prevent current from going back to the input in
case the output voltage is higher than the input voltage. Input
voltage is needed for the reverse blocking circuit to work
properly, it can be as low as VIN(min).
APPLICATION INFORMATION
Input Capacitor
While bypass capacitors on the inputs are not required,
2.2 µF or larger capacitors for CIN is recommended in almost
all applications. The bypass capacitors should be placed as
physically close as possible to the device’s input to be
effective in minimizing transients on the input. Ceramic
capacitors are recommended over tantalum because of their
ability to withstand input current surges from low impedance
sources such as batteries in portable devices.
Output Capacitor
A 0.1 µF capacitor or larger across VOUT and GND is
recommended to insure proper slew operation. COUT may be
increased without limit to accommodate any load transient
condition with only minimal affect on the turn on slew rate
time. There are no ESR or capacitor type requirement.
package. To obtain the highest power dissipation (and a
thermal resistance of 84) the power pad of the device should
be connected to a heat sink on the printed circuit board.
The maximum power dissipation in any application is
dependant on the maximum junction temperature,
TJ(max.) = 125 °C, the junction-to-ambient thermal resistance
for the TDFN4 1.2 mm x 1.6 mm package, θJ-A = 84 °C/W,
and the ambient temperature, TA, which may be formulaically
expressed as:
P (max.)
=
T J (max.) - T A
θJ- A
=
125 - TA
84
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to about
655 mW.
So long as the load current is below the 2.0 A limit, the
maximum continuous switch current becomes a function two
things: the package power dissipation and the RDS(ON) at the
ambient temperature.
As an example let us calculate the worst case maximum load
current at TA = 70 °C. The worst case RDS(ON) at 25 °C
occurs at an input voltage of 1.2 V and is equal to 75 mΩ. The
RDS(ON) at 70 °C can be extrapolated from this data using
the following formula:
RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT)
Where TC is 3400 ppm/°C. Continuing with the calculation
we have
RDS(ON) (at 70 °C) = 75 mΩ x (1 + 0.0034 x (70 °C - 25 °C))
= 86.5 mΩ
The maximum current limit is then determined by
P (max.)
Control
The CNTRL pins are compatible with both TTL and CMOS
logic voltage levels.
I LOAD (max.) <
Protection Against Reverse Voltage Condition
Both SiP32413 and SiP32414 contain reverse blocking
circuitries to protect the current from going to the input from
the output in case where the output voltage is higher than the
input voltage when the main switch is off. Supply voltages as
low as the minimum required input voltage are necessary for
these circuitries to work properly.
which in case is 2.75 A, assuming one switch turn on at a
time. Under the stated input voltage condition, if the 2.75 A
current limit is exceeded the internal die temperature will rise
and eventually, possibly damage the device.
R DS(ON )
Thermal Considerations
SiP32413 and SiP32414 are designed to maintain constant
output load current. Due to physical limitations of the layout
and assembly of the device the maximum switch current is
2.4 A, as stated in the Absolute Maximum Ratings table.
However, another limiting characteristic for the safe
operating load current is the thermal power dissipation of the
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71437.
www.vishay.com
10
Document Number: 71437
S11-0366-Rev. A, 07-Mar-11
Package Information
Vishay Siliconix
CASE OUTLINE FOR TDFN8 2 x 2
Index Area
(D/2 x E/2)
A
A3
A1
D
1
8
2
7
MILLIMETERS
6
DIM.
MIN.
NOM.
MAX.
MIN.
NOM.
A
0.50
0.55
0.60
0.020
0.022
0.024
A1
0.00
-
0.05
0.000
-
0.002
E
A3
6
3
0.152 REF
5
Top View
0.05 C 7
Side View
D2
0.006 REF
0.18
0.23
0.28
0.007
0.009
0.011
D
1.95
2.00
2.05
0.077
0.079
0.081
D2
0.75
0.80
0.85
0.030
0.031
0.033
0.50 BSC
0.020 BSC
E
1.95
2.00
2.05
0.077
0.079
0.081
E2
1.40
1.45
1.50
0.055
0.057
0.059
K
-
0.20
-
-
0.008
-
L
0.30
0.35
0.40
0.012
0.014
0.016
ECN: C11-0033 Rev. A, 07-Feb-11
DWG: 5997
L
5
Note
1. All dimensions are in millimeters which will govern.
b
Pin 1 Indicator
(Optional)
MAX.
b
e
4
INCHES
1
7
2
6
3
6. Applied only for terminals.
e
2. Max. package warpage is 0.05 mm.
8
5
7. Applied for exposed pad and terminals.
4
3. Max. allowable burrs is 0.076 mm in all directions.
E2
4. Pin #1 ID on top will be laser/ink marked.
5. Dimension applies to meatlized terminal and is measured
between 0.20 mm and 0.25 mm from terminal tip.
K
K
Bottom View
Document Number: 67493
Revison: 07-Feb-11
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1