VISHAY SIP32431DR3

SiP32431
Vishay Siliconix
1.0 A Slew Rate Controlled Load Switch with Reverse Blocking in
SC70-6, and TDFN4 1.2 mm x 1.6 mm
DESCRIPTION
FEATURES
The SiP32431 is a slew rate controlled high side switch with
reverse blocking capability. The switch is of a low ON
resistance p-channel MOSFET that supports continuous
current up to 1.0 A.
The SiP32431 operates with an input voltage from 1.5 V to
5.5 V.
The SiP32431 features low input logic level to interface with
low control voltage from microprocessors. This device has a
very low operating current, typically 50 pA.
The SiP32431 is available in lead (Pb)-free package options
including 6 pin SC70-6, and 4 pin TDFN4 1.2 mm x 1.6 mm
DFN4 packages. The operation temperature range is
specified from - 40 °C to + 85 °C.
The SiP32431 compact package options, operation voltage
range, and low operating current make it a good fit for battery
power applications.
• 1.5 V to 5.5 V input voltage range
• Very low RDS(on), typically 105 m at 5 V and
135 m at 3 V for TDFN4 1.2 mm x 1.6 mm
package
• Typical 147 m at 5 V and 178 m at 3 V for
SC70-6 package
• Slew rate controlled turn-on time: 100 µs
• Low quiescent current < 1 µA
• Low shutdown current < 1 µA
• Reverse blocking capability
• SC70-6 and TDFN4 1.2 mm x 1.6 mm packages
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
•
•
•
•
•
•
•
Cellular telephones
Digital still cameras
Personal digital assistants (PDA)
Hot swap supplies
Notebook computers
Personal communication devices
Portable Instruments
TYPICAL APPLICATION CIRCUIT
VIN
IN
OUT
VOUT
SiP32431
C IN
1 µF
C OUT
0.1 µF
ON/OFF
ON/OFF
GND
GND
GND
Figure 1 - SiP32431 Typical Application Circuit
Document Number: 66597
S11-0175-Rev. B, 07-Feb-11
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SiP32431
Vishay Siliconix
ORDERING INFORMATION
Temperature Range
- 40 °C to 85 °C
Package
Marking
Part Number
SC70-6
MAxx
SiP32431DR3-T1GE3
TDFN4 1.2 mm x 1.6 mm
ADx
SiP32431DNP3-T1GE4
Notes:
x = Lot Code
-GE3 denotes halogen-free and RoHS compliant
Please use the SiP32431DR3-T1GE3 to replace SiP32431DR3-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Supply Input Voltage (VIN)
- 0.3 to 6
Enable Input Voltage (VON/OFF)
- 0.3 to 6
Output Voltage (VOUT)
Maximum Continuous Switch Current (IMAX)
Maximum Pulsed Current (IDM) VIN
(Pulsed at 1 ms, 10 % Duty Cycle)
1.2
TDFN4 1.2 mm x 1.6 mm
1.4
VIN  2.5 V
3
VIN  2.5 V
1.6
Junction Temperature (TJ)
Power Dissipation (PD)a
V
- 0.3 to VIN + 0.3
SC70-6 package
ESD Rating (HBM)
Thermal Resistance (JA)a
Unit
4000
V
- 40 to 125
°C
6 pin SC70-6b
220
4 pin TDFN4 1.2 mm x 1.6 mmc
170
6 pin SC70-6b
250
c
4 pin TDFN4 1.2 mm x 1.6 mm
A
°C/W
mW
324
Notes:
a. Device mounted with all leads and power pad soldered or welded to PC board.
b. Derate 4.5 mW/°C above TA = 70 °C.
c. Derate 5.9 mW/°C above TA = 70 °C, see PCB layout.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Limit
Unit
Input Voltage Range (VIN)
1.5 to 5.5
V
Operating Temperature Range
- 40 to 85
°C
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Document Number: 66597
S11-0175-Rev. B, 07-Feb-11
SiP32431
Vishay Siliconix
SPECIFICATIONS
Parameter
Operating Voltagec
Symbol
VIN
Test Conditions Unless Specified
VIN = 5.0, TA = - 40 °C to 85 °C
(Typical values are at TA = 25 °C)
Limits
- 40 °C to 85 °C
Min.a
Typ.b
Max.a
1.5
-
5.5
Quiescent Current
IQ
On/Off = active
-
0.00005
1
Off Supply Current
IQ(off)
On/Off = inactive, Out = open
-
-
1
Off Switch Current
ISD(off)
On/Off = inactive, Out = 0
-
-
1
IRB
VOUT = 5.5 V, VIN = 0, Von/off = inactive
1
Reverse Blocking Current
-
0.13
SC70-6
-
147
TDFN4
-
105
SC70-6
-
155
TDFN4
-
110
SC70-6
-
178
TDFN4
-
135
SC70-6
-
275
TDFN4
-
230
SC70-6
-
395
TDFN4
-
350
-
2800
-
VIN  1.5 V to < 1.8 V
-
-
0.3
VIN  1.8 V to < 2.7 V
-
-
0.4
VIN = 5 V, IL = 500 mA, TA = 25 °C
VIN = 4.2 V, IL = 500 mA, TA = 25 °C
On-Resistance
RDS(on)
VIN = 3 V, IL = 500 mA, TA = 25 °C
VIN = 1.8 V, IL = 500 mA, TA = 25 °C
VIN = 1.5 V, IL = 500 mA, TA = 25 °C
On-Resistance Temp.-Coefficient
On/Off Input Low Voltagec
TDRDS
VIL
VIN  2.7 V to  5.5 V
On/Off Input Low Voltagec
VIH
On/Off Input Leakage
ISINK
Output Turn-On Delay Time
td(on)
Output Turn-On Rise Time
t(on)
Output Turn-Off Delay Time
td(off)
µA
230
250
290
m
480
520
VIN  1.5 V to <2.7 V
-
-
0.6
1.3
-
-
VIN  2.7 V to < 4.2 V
1.5
-
-
VIN  4.2 V to 5.5 V
1.8
-
-
VOn/Off = 5.5 V
-
-
1
VIN = 5 V, RLOAD = 10 , TA = 25 °C
Unit
V
-
20
40
-
140
180
-
4
10
ppm/°C
V
µA
µs
Notes:
a. The algebriac convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing
c. For VIN outside this range consult typical ON/OFF threshold curve.
Document Number: 66597
S11-0175-Rev. B, 07-Feb-11
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SiP32431
Vishay Siliconix
PIN CONFIGURATION
OUT
1
6
N/C
GND
2
5
GND
ON/OFF
3
4
IN
ON/OFF
4
IN
3
1
OUT
2
GND
GND
Bottom View
Figure 3 - TDFN4 1.2 mm x 1.6 mm Package
Top View
Figure 2 - SC70-6 Package
PIN DESCRIPTION
Pin Number
SC70-6
TDFN4
4
3
2, 5
2
3
4
1
1
Name
IN
GND
ON/OFF
OUT
Function
This pin is the p-channel MOSFET source connection. Bypass to ground through a 1 µF capacitor.
Ground connection
Enable input
This pin is the p-channel MOSFET drain connection. Bypass to ground through a 0.1 µF capacitor.
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
0.12
10
IQ - Quiescent Current (nA)
IQ - Quiescent Current (nA)
0.10
0.08
0.06
0.04
1
0.1
VIN = 5 V
0.01
0.02
VIN = 3 V
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.001
- 40
5.5
- 20
0
20
40
60
80
100
VIN (V)
Temperature (°C)
Figure 4 - Quiescent Current vs. Input Voltage
Figure 5 - Quiescent Current vs. Temperature
300
350
VIN = 5 V
ISD(OFF) - Off Switch Current (nA)
ISD(OFF) - Off Switch Current (nA)
300
250
200
150
100
50
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
250
200
150
100
50
0
- 40
- 20
0
20
40
60
80
100
VIN (V)
Temperature (°C)
Figure 6 - Off Switch Current vs. Input Voltage
Figure 7 - Off Switch Current vs. Temperature
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Document Number: 66597
S11-0175-Rev. B, 07-Feb-11
SiP32431
Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
550
220
for SC70-6 package
500
IL = 1.2 A
200
RDS - On-Resistance (mΩ)
RDS - On-Resistance (mΩ)
450
400
IL = 500 mA
350
300
250
200
IL = 100 mA
150
190
180
170
VIN = 3 V
160
VIN = 5 V
150
140
130
100
50
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
120
- 40
5.5
- 20
0
20
40
60
80
VIN (V)
Temperature (°C)
Figure 8 - RDS(on) vs. VIN for SC70-6 Package
Figure 9 - RDS(on) vs. Temperature
550
100
180
ILOAD = 500 mA
for TDFN4 package
for TDFN4 package
500
160
400
RDS - On-Resistance (mΩ)
450
RDS - On-Resistance (mΩ)
ILOAD = 500 mA
for SC70-6 package
210
IL = 1.2 A
350
300
IL = 500 mA
250
200
150
140
VIN = 3 V
120
100
VIN = 5 V
80
IL = 100 mA
100
50
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
60
- 40
5.5
0
20
40
60
80
Temperature (°C)
Figure 10 - RDS(on) vs. Input Voltage
Figure 11 - RDS(on) vs. Temperature
100
600
1000
VIN = 0 V
IRB - Reverse Blocking Current (nA)
IRB - Reverse Blocking Current (nA)
- 20
VIN (V)
100
10
1
0.1
0.01
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
500
VOUT = 5.5 V
VIN = 0 V
400
300
200
100
0
- 40
- 20
0
20
40
60
80
100
VOUT (V)
Temperature (°C)
Figure 12 - Reverse Blocking Current vs. VOUT
Figure 13 - Reverse Blocking Current vs. Temperature
Document Number: 66597
S11-0175-Rev. B, 07-Feb-11
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SiP32431
Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
1.6
On/Off Threshold Voltage (V)
1.4
1.2
VIH
1.0
VIL
0.8
0.6
0.4
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VIN (V)
Figure 14 - ON/OFF Threshold vs. Input Voltage
TYPICAL WAVEFORMS
Figure 15 - Switching (VIN = 3 V)
Figure 16 - Turn-Off (VIN = 3 V)
Figure 17 - Switching (VIN = 5 V)
Figure 18 - Turn-Off (VIN = 5 V)
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Document Number: 66597
S11-0175-Rev. B, 07-Feb-11
SiP32431
Vishay Siliconix
BLOCK DIAGRAM
Reverse
Blocking
OUT
IN
Turn-On
Slew Rate
Control
Level
Shift
ON/OFF
GND
Figure 19 - Functional Block Diagram
PCB LAYOUT
Top
Bottom
Figure 20 - TDFN4 1.2 mm x 1.6 mm PCB Layout
Document Number: 66597
S11-0175-Rev. B, 07-Feb-11
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SiP32431
Vishay Siliconix
DETAILED DESCRIPTION
The SiP32431 is a P-Channel MOSFET power switches
designed for high-side slew rate controlled load-switching
applications. Once turned on, the slew-rate control circuitry
is activated and current is ramped in a linear fashion until it
reaches the level required for the output load condition. This
is accomplished by first elevating the gate voltage of the
MOSFET up to its threshold voltage and then by linearly
increasing the gate voltage until the MOSFET becomes fully
enhanced. At this point, the gate voltage is then quickly
increased to the full input voltage to reduce RDS(on) of the
MOSFET switch and minimize any associated power losses.
APPLICATION INFORMATION
Input Capacitor
While a bypass capacitor on the input is not required, a 1 µF
or larger capacitor for CIN is recommended in almost all
applications. The bypass capacitor should be placed as
physically close as possible to the SiP32431 to be effective
in minimizing transients on the input. Ceramic capacitors are
recommended over tantalum because of their ability to
withstand input current surges from low impedance sources
such as batteries in portable devices.
Output Capacitor
A 0.1 µF capacitor or larger across VOUT and GND is
recommended to insure proper slew operation. COUT may be
increased without limit to accommodate any load transient
condition with only minimal affect on the SiP32431 turn on
slew rate time. There are no ESR or capacitor type
requirement.
The maximum power dissipation in any application is
dependant on the maximum junction temperature,
TJ(MAX) = 125 °C, the junction-to-ambient thermal resistance
for the TDFN4 1.2 mm x 1.6 mm package, J-A = 170 °C/W,
and the ambient temperature, TA, which may be formulaically
expressed as:
P (max.)
=
T J (max.) - T A
θJ- A
=
125 - TA
170
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to about
324 mW.
So long as the load current is below the 1.0 A limit, the
maximum continuous switch current becomes a function two
things: the package power dissipation and the RDS(on) at the
ambient temperature.
As an example let us calculate the worst case maximum load
current at TA = 70 °C. The worst case RDS(on) at 25 °C occurs
at an input voltage of 1.5 V and is equal to 520 m. The
RDS(on) at 70 °C can be extrapolated from this data using the
following formula
RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x T)
Where TC is 3300 ppm/°C. Continuing with the calculation
we have
RDS(on) (at 70 °C) = 520 m x (1 + 0.0033 x (70 °C - 25 °C))
= 597 m
The maximum current limit is then determined by
P (max.)
Enable
The On/Off pin is compatible with both TTL and CMOS logic
voltage levels.
I LOAD (max.) <
Protection Against Reverse Voltage Condition
The SiP32431 contains a body snatcher that normally
connect the body to the Source (IN) when the device is
enable. In case where the device is disabled but the VOUT is
higher than the VIN, the n-type body is switched to OUT,
reverse bias the body diode to prevent the current from going
back to the input.
which in case is 0.74 A. Under the stated input voltage
condition, if the 0.74 A current limit is exceeded the internal
die temperature will rise and eventually, possibly damage the
device.
R DS(on)
Thermal Considerations
The SiP32431 is designed to maintain a constant output load
current. Due to physical limitations of the layout and
assembly of the device the maximum switch current is 1.0 A,
as stated in the Absolute Maximum Ratings table. However,
another limiting characteristic for the safe operating load
current is the thermal power dissipation of the package. To
obtain the highest power dissipation (and a thermal
resistance of 170 °C/W) the power pad of the device should
be connected to a heat sink on the printed circuit board.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?66597.
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Document Number: 66597
S11-0175-Rev. B, 07-Feb-11
Package Information
Vishay Siliconix
TDFN4 1.2 x 1.6 CASE OUTLINE
D
4
D2
b
3
Pin #1 ID
(Optional)
4
2
Index Area
(D/2 x E/2)
1
2
e
Bottom View
A
A1
Top View
A3
1
L
K
E
E2
3
Side View
MILLIMETERS
DIM.
MIN.
A
0.50
A1
0.00
A3
b
0.20
D
1.15
D2
0.81
e
E
1.55
E2
0.45
K
0.20
L
0.30
ECN: C10-0043-Rev. A, 08-Feb-10
DWG: 5995
Document Number: 65734
Revision: 08-Feb-10
INCHES
NOM.
MAX.
MIN.
NOM.
MAX.
0.55
0.15 REF
0.25
1.20
0.86
0.50 BSC
1.60
0.50
0.35
0.60
0.05
0.020
0.00
0.024
0.002
0.30
1.25
0.91
0.008
0.045
0.032
1.65
0.55
0.40
0.061
0.018
0.008
0.012
0.022
0.006
0.010
0.047
0.034
0.020
0.063
0.020
0.014
0.012
0.049
0.036
0.065
0.022
0.016
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Package Information
Vishay Siliconix
SC-70:
3/4/5/6-LEADS (PIC ONLY)
0.15 (0.006)
D
C
e1
A
A
D
N5
N4
N3
E/2
E1/2
E
E/1
0.15 (0.006)
C
Pin 1
N1
N2
B
e
See Detail A
C
0.10 (0.004)
M
C
A
b
B
U1
A2
A
SEATING
PLANE
0.10 (0.004)
C
A1
C
H
(b)
0.15 (0.0059)
b1
c1
GAGE PLANE
c
Base Metal
DETAIL A
SECTIION A-A
Pin
Code
N1
N2
N3
N4
N5
U
L
LEAD COUNT
NOTES:
3
4
5
6
1.
Dimensioning and tolerancing per ANSI Y14.5M-1994.
−
−
2
2
2.
2
2
3
3
Controlling dimensions: millimeters converted to inch dimensions are
not necessarily exact.
−
3
4
4
3.
3
−
−
5
Dimension “D” does not include mold flash, protrusion or gate burr.
Mold flash, protrusion or gate burr shall not exceed 0.15 mm
(0.006 inch) per side.
−
4
5
6
4.
The package top shall be smaller than the package bottom.
Dimension “D” and “E1” are determined at the outer most extremes
of the plastic body exclusive of mold flash, tie bar burrs, gate burrs
and interlead flash, but including any mismatch between the top and
bottom of the plastic body.
Document Number: 73201
19-Nov-04
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Package Information
Vishay Siliconix
MILLIMETERS
INCHES
Dim
Min
Nom
Max
Min
Nom
Max
A
0.80
−
1.10
0.031
−
0.043
A1
0.00
−
0.10
0.000
−
0.004
A2
0.80
0.90
1.00
0.031
0.035
0.040
b
0.15
−
0.30
0.006
−
0.012
b1
0.15
0.20
0.25
0.006
0.008
0.010
c
0.08
−
0.25
0.003
−
0.010
c1
0.08
0.13
0.20
0.003
0.005
0.008
D
1.90
2.10
2.15
0.074
0.082
0.084
E
2.00
2.10
2.20
0.078
0.082
0.086
E1
1.15
1.25
1.35
0.045
0.050
0.055
e
0.65 BSC
0.0255 BSC
e1
1.30 BSC
0.0512 BSC
L
0.26
0.36
0.46
0.010
0.014
0.018
U
0_
−
8_
0_
−
8_
U1
4_
10_
4_
10_
ECN: S-42145—Rev. A, 22-Nov-04
DWG: 5941
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Document Number: 73201
19-Nov-04
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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