SiP32431 Vishay Siliconix 1.0 A Slew Rate Controlled Load Switch with Reverse Blocking in SC70-6, and TDFN4 1.2 mm x 1.6 mm DESCRIPTION FEATURES The SiP32431 is a slew rate controlled high side switch with reverse blocking capability. The switch is of a low ON resistance p-channel MOSFET that supports continuous current up to 1.0 A. The SiP32431 operates with an input voltage from 1.5 V to 5.5 V. The SiP32431 features low input logic level to interface with low control voltage from microprocessors. This device has a very low operating current, typically 50 pA. The SiP32431 is available in lead (Pb)-free package options including 6 pin SC70-6, and 4 pin TDFN4 1.2 mm x 1.6 mm DFN4 packages. The operation temperature range is specified from - 40 °C to + 85 °C. The SiP32431 compact package options, operation voltage range, and low operating current make it a good fit for battery power applications. • 1.5 V to 5.5 V input voltage range • Very low RDS(on), typically 105 m at 5 V and 135 m at 3 V for TDFN4 1.2 mm x 1.6 mm package • Typical 147 m at 5 V and 178 m at 3 V for SC70-6 package • Slew rate controlled turn-on time: 100 µs • Low quiescent current < 1 µA • Low shutdown current < 1 µA • Reverse blocking capability • SC70-6 and TDFN4 1.2 mm x 1.6 mm packages • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • • • • • • • Cellular telephones Digital still cameras Personal digital assistants (PDA) Hot swap supplies Notebook computers Personal communication devices Portable Instruments TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32431 C IN 1 µF C OUT 0.1 µF ON/OFF ON/OFF GND GND GND Figure 1 - SiP32431 Typical Application Circuit Document Number: 66597 S11-0175-Rev. B, 07-Feb-11 www.vishay.com 1 SiP32431 Vishay Siliconix ORDERING INFORMATION Temperature Range - 40 °C to 85 °C Package Marking Part Number SC70-6 MAxx SiP32431DR3-T1GE3 TDFN4 1.2 mm x 1.6 mm ADx SiP32431DNP3-T1GE4 Notes: x = Lot Code -GE3 denotes halogen-free and RoHS compliant Please use the SiP32431DR3-T1GE3 to replace SiP32431DR3-T1-E3 ABSOLUTE MAXIMUM RATINGS Parameter Limit Supply Input Voltage (VIN) - 0.3 to 6 Enable Input Voltage (VON/OFF) - 0.3 to 6 Output Voltage (VOUT) Maximum Continuous Switch Current (IMAX) Maximum Pulsed Current (IDM) VIN (Pulsed at 1 ms, 10 % Duty Cycle) 1.2 TDFN4 1.2 mm x 1.6 mm 1.4 VIN 2.5 V 3 VIN 2.5 V 1.6 Junction Temperature (TJ) Power Dissipation (PD)a V - 0.3 to VIN + 0.3 SC70-6 package ESD Rating (HBM) Thermal Resistance (JA)a Unit 4000 V - 40 to 125 °C 6 pin SC70-6b 220 4 pin TDFN4 1.2 mm x 1.6 mmc 170 6 pin SC70-6b 250 c 4 pin TDFN4 1.2 mm x 1.6 mm A °C/W mW 324 Notes: a. Device mounted with all leads and power pad soldered or welded to PC board. b. Derate 4.5 mW/°C above TA = 70 °C. c. Derate 5.9 mW/°C above TA = 70 °C, see PCB layout. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Limit Unit Input Voltage Range (VIN) 1.5 to 5.5 V Operating Temperature Range - 40 to 85 °C www.vishay.com 2 Document Number: 66597 S11-0175-Rev. B, 07-Feb-11 SiP32431 Vishay Siliconix SPECIFICATIONS Parameter Operating Voltagec Symbol VIN Test Conditions Unless Specified VIN = 5.0, TA = - 40 °C to 85 °C (Typical values are at TA = 25 °C) Limits - 40 °C to 85 °C Min.a Typ.b Max.a 1.5 - 5.5 Quiescent Current IQ On/Off = active - 0.00005 1 Off Supply Current IQ(off) On/Off = inactive, Out = open - - 1 Off Switch Current ISD(off) On/Off = inactive, Out = 0 - - 1 IRB VOUT = 5.5 V, VIN = 0, Von/off = inactive 1 Reverse Blocking Current - 0.13 SC70-6 - 147 TDFN4 - 105 SC70-6 - 155 TDFN4 - 110 SC70-6 - 178 TDFN4 - 135 SC70-6 - 275 TDFN4 - 230 SC70-6 - 395 TDFN4 - 350 - 2800 - VIN 1.5 V to < 1.8 V - - 0.3 VIN 1.8 V to < 2.7 V - - 0.4 VIN = 5 V, IL = 500 mA, TA = 25 °C VIN = 4.2 V, IL = 500 mA, TA = 25 °C On-Resistance RDS(on) VIN = 3 V, IL = 500 mA, TA = 25 °C VIN = 1.8 V, IL = 500 mA, TA = 25 °C VIN = 1.5 V, IL = 500 mA, TA = 25 °C On-Resistance Temp.-Coefficient On/Off Input Low Voltagec TDRDS VIL VIN 2.7 V to 5.5 V On/Off Input Low Voltagec VIH On/Off Input Leakage ISINK Output Turn-On Delay Time td(on) Output Turn-On Rise Time t(on) Output Turn-Off Delay Time td(off) µA 230 250 290 m 480 520 VIN 1.5 V to <2.7 V - - 0.6 1.3 - - VIN 2.7 V to < 4.2 V 1.5 - - VIN 4.2 V to 5.5 V 1.8 - - VOn/Off = 5.5 V - - 1 VIN = 5 V, RLOAD = 10 , TA = 25 °C Unit V - 20 40 - 140 180 - 4 10 ppm/°C V µA µs Notes: a. The algebriac convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing c. For VIN outside this range consult typical ON/OFF threshold curve. Document Number: 66597 S11-0175-Rev. B, 07-Feb-11 www.vishay.com 3 SiP32431 Vishay Siliconix PIN CONFIGURATION OUT 1 6 N/C GND 2 5 GND ON/OFF 3 4 IN ON/OFF 4 IN 3 1 OUT 2 GND GND Bottom View Figure 3 - TDFN4 1.2 mm x 1.6 mm Package Top View Figure 2 - SC70-6 Package PIN DESCRIPTION Pin Number SC70-6 TDFN4 4 3 2, 5 2 3 4 1 1 Name IN GND ON/OFF OUT Function This pin is the p-channel MOSFET source connection. Bypass to ground through a 1 µF capacitor. Ground connection Enable input This pin is the p-channel MOSFET drain connection. Bypass to ground through a 0.1 µF capacitor. TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 0.12 10 IQ - Quiescent Current (nA) IQ - Quiescent Current (nA) 0.10 0.08 0.06 0.04 1 0.1 VIN = 5 V 0.01 0.02 VIN = 3 V 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.001 - 40 5.5 - 20 0 20 40 60 80 100 VIN (V) Temperature (°C) Figure 4 - Quiescent Current vs. Input Voltage Figure 5 - Quiescent Current vs. Temperature 300 350 VIN = 5 V ISD(OFF) - Off Switch Current (nA) ISD(OFF) - Off Switch Current (nA) 300 250 200 150 100 50 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 250 200 150 100 50 0 - 40 - 20 0 20 40 60 80 100 VIN (V) Temperature (°C) Figure 6 - Off Switch Current vs. Input Voltage Figure 7 - Off Switch Current vs. Temperature www.vishay.com 4 Document Number: 66597 S11-0175-Rev. B, 07-Feb-11 SiP32431 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 550 220 for SC70-6 package 500 IL = 1.2 A 200 RDS - On-Resistance (mΩ) RDS - On-Resistance (mΩ) 450 400 IL = 500 mA 350 300 250 200 IL = 100 mA 150 190 180 170 VIN = 3 V 160 VIN = 5 V 150 140 130 100 50 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 120 - 40 5.5 - 20 0 20 40 60 80 VIN (V) Temperature (°C) Figure 8 - RDS(on) vs. VIN for SC70-6 Package Figure 9 - RDS(on) vs. Temperature 550 100 180 ILOAD = 500 mA for TDFN4 package for TDFN4 package 500 160 400 RDS - On-Resistance (mΩ) 450 RDS - On-Resistance (mΩ) ILOAD = 500 mA for SC70-6 package 210 IL = 1.2 A 350 300 IL = 500 mA 250 200 150 140 VIN = 3 V 120 100 VIN = 5 V 80 IL = 100 mA 100 50 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 60 - 40 5.5 0 20 40 60 80 Temperature (°C) Figure 10 - RDS(on) vs. Input Voltage Figure 11 - RDS(on) vs. Temperature 100 600 1000 VIN = 0 V IRB - Reverse Blocking Current (nA) IRB - Reverse Blocking Current (nA) - 20 VIN (V) 100 10 1 0.1 0.01 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 500 VOUT = 5.5 V VIN = 0 V 400 300 200 100 0 - 40 - 20 0 20 40 60 80 100 VOUT (V) Temperature (°C) Figure 12 - Reverse Blocking Current vs. VOUT Figure 13 - Reverse Blocking Current vs. Temperature Document Number: 66597 S11-0175-Rev. B, 07-Feb-11 www.vishay.com 5 SiP32431 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 1.6 On/Off Threshold Voltage (V) 1.4 1.2 VIH 1.0 VIL 0.8 0.6 0.4 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VIN (V) Figure 14 - ON/OFF Threshold vs. Input Voltage TYPICAL WAVEFORMS Figure 15 - Switching (VIN = 3 V) Figure 16 - Turn-Off (VIN = 3 V) Figure 17 - Switching (VIN = 5 V) Figure 18 - Turn-Off (VIN = 5 V) www.vishay.com 6 Document Number: 66597 S11-0175-Rev. B, 07-Feb-11 SiP32431 Vishay Siliconix BLOCK DIAGRAM Reverse Blocking OUT IN Turn-On Slew Rate Control Level Shift ON/OFF GND Figure 19 - Functional Block Diagram PCB LAYOUT Top Bottom Figure 20 - TDFN4 1.2 mm x 1.6 mm PCB Layout Document Number: 66597 S11-0175-Rev. B, 07-Feb-11 www.vishay.com 7 SiP32431 Vishay Siliconix DETAILED DESCRIPTION The SiP32431 is a P-Channel MOSFET power switches designed for high-side slew rate controlled load-switching applications. Once turned on, the slew-rate control circuitry is activated and current is ramped in a linear fashion until it reaches the level required for the output load condition. This is accomplished by first elevating the gate voltage of the MOSFET up to its threshold voltage and then by linearly increasing the gate voltage until the MOSFET becomes fully enhanced. At this point, the gate voltage is then quickly increased to the full input voltage to reduce RDS(on) of the MOSFET switch and minimize any associated power losses. APPLICATION INFORMATION Input Capacitor While a bypass capacitor on the input is not required, a 1 µF or larger capacitor for CIN is recommended in almost all applications. The bypass capacitor should be placed as physically close as possible to the SiP32431 to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 µF capacitor or larger across VOUT and GND is recommended to insure proper slew operation. COUT may be increased without limit to accommodate any load transient condition with only minimal affect on the SiP32431 turn on slew rate time. There are no ESR or capacitor type requirement. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(MAX) = 125 °C, the junction-to-ambient thermal resistance for the TDFN4 1.2 mm x 1.6 mm package, J-A = 170 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: P (max.) = T J (max.) - T A θJ- A = 125 - TA 170 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 324 mW. So long as the load current is below the 1.0 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(on) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(on) at 25 °C occurs at an input voltage of 1.5 V and is equal to 520 m. The RDS(on) at 70 °C can be extrapolated from this data using the following formula RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x T) Where TC is 3300 ppm/°C. Continuing with the calculation we have RDS(on) (at 70 °C) = 520 m x (1 + 0.0033 x (70 °C - 25 °C)) = 597 m The maximum current limit is then determined by P (max.) Enable The On/Off pin is compatible with both TTL and CMOS logic voltage levels. I LOAD (max.) < Protection Against Reverse Voltage Condition The SiP32431 contains a body snatcher that normally connect the body to the Source (IN) when the device is enable. In case where the device is disabled but the VOUT is higher than the VIN, the n-type body is switched to OUT, reverse bias the body diode to prevent the current from going back to the input. which in case is 0.74 A. Under the stated input voltage condition, if the 0.74 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. R DS(on) Thermal Considerations The SiP32431 is designed to maintain a constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 1.0 A, as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of 170 °C/W) the power pad of the device should be connected to a heat sink on the printed circuit board. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?66597. www.vishay.com 8 Document Number: 66597 S11-0175-Rev. B, 07-Feb-11 Package Information Vishay Siliconix TDFN4 1.2 x 1.6 CASE OUTLINE D 4 D2 b 3 Pin #1 ID (Optional) 4 2 Index Area (D/2 x E/2) 1 2 e Bottom View A A1 Top View A3 1 L K E E2 3 Side View MILLIMETERS DIM. MIN. A 0.50 A1 0.00 A3 b 0.20 D 1.15 D2 0.81 e E 1.55 E2 0.45 K 0.20 L 0.30 ECN: C10-0043-Rev. A, 08-Feb-10 DWG: 5995 Document Number: 65734 Revision: 08-Feb-10 INCHES NOM. MAX. MIN. NOM. MAX. 0.55 0.15 REF 0.25 1.20 0.86 0.50 BSC 1.60 0.50 0.35 0.60 0.05 0.020 0.00 0.024 0.002 0.30 1.25 0.91 0.008 0.045 0.032 1.65 0.55 0.40 0.061 0.018 0.008 0.012 0.022 0.006 0.010 0.047 0.034 0.020 0.063 0.020 0.014 0.012 0.049 0.036 0.065 0.022 0.016 www.vishay.com 1 Package Information Vishay Siliconix SC-70: 3/4/5/6-LEADS (PIC ONLY) 0.15 (0.006) D C e1 A A D N5 N4 N3 E/2 E1/2 E E/1 0.15 (0.006) C Pin 1 N1 N2 B e See Detail A C 0.10 (0.004) M C A b B U1 A2 A SEATING PLANE 0.10 (0.004) C A1 C H (b) 0.15 (0.0059) b1 c1 GAGE PLANE c Base Metal DETAIL A SECTIION A-A Pin Code N1 N2 N3 N4 N5 U L LEAD COUNT NOTES: 3 4 5 6 1. Dimensioning and tolerancing per ANSI Y14.5M-1994. − − 2 2 2. 2 2 3 3 Controlling dimensions: millimeters converted to inch dimensions are not necessarily exact. − 3 4 4 3. 3 − − 5 Dimension “D” does not include mold flash, protrusion or gate burr. Mold flash, protrusion or gate burr shall not exceed 0.15 mm (0.006 inch) per side. − 4 5 6 4. The package top shall be smaller than the package bottom. Dimension “D” and “E1” are determined at the outer most extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. Document Number: 73201 19-Nov-04 www.vishay.com 1 Package Information Vishay Siliconix MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.80 − 1.10 0.031 − 0.043 A1 0.00 − 0.10 0.000 − 0.004 A2 0.80 0.90 1.00 0.031 0.035 0.040 b 0.15 − 0.30 0.006 − 0.012 b1 0.15 0.20 0.25 0.006 0.008 0.010 c 0.08 − 0.25 0.003 − 0.010 c1 0.08 0.13 0.20 0.003 0.005 0.008 D 1.90 2.10 2.15 0.074 0.082 0.084 E 2.00 2.10 2.20 0.078 0.082 0.086 E1 1.15 1.25 1.35 0.045 0.050 0.055 e 0.65 BSC 0.0255 BSC e1 1.30 BSC 0.0512 BSC L 0.26 0.36 0.46 0.010 0.014 0.018 U 0_ − 8_ 0_ − 8_ U1 4_ 10_ 4_ 10_ ECN: S-42145—Rev. A, 22-Nov-04 DWG: 5941 www.vishay.com 2 Document Number: 73201 19-Nov-04 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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