e-5 -,--5 3 .---= = = -a== =- an AMP company * RF MOSFET Power Transistor, IOOW, 28V 100 - 500 MHz UF281 OOV v2.00 Features l N-Channel Enhancement &lode Device l DMOS Structure Lower Capacitances l High Saturated Output Power l Lower l for Broadband Operation Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C ( Symbol I Parameter 1 ( Units Rating Drain-Source Voltage V DS 65 V Gate-Source Voltage V GS 20 V ‘DS 12 A Power Dissipation PD 250 W JunctionTemperature TJ 200 “C Storage Temperature T sic -55 to +150 “C Thermal Resistance 8 IP 0.7 “crw Drain-Source Electrical _____.._~~ Current Characteristics at 25°C Parameter Voltage Symbol Min Max Units BV,,, 65 - V 3.0 mA Drain-Source Breakdown Drain-Source LeakageCurrent IDSS Gate-Source Leakage Current ‘GSS , ) 3.0 ] I fl V,.=O.O V. I& V,,=28.0 , 1 v,,=2ov, I 5.0 mA V, V,,=O.O V’ vDs=o.o v V,,=lO.O V, 1,,=300.0 S V,,=10.0 V, 1,,=3000.0 135 pF V,,=28.0 V, F=l .O MHz’ C ass 90 PF V,,=28.0 V, F=l .O MHz’ C RSS 24 pF V,,=28.0 V, F=l .O MHz’ 10 - dB V,,=28.0 V, 1,,=600.0 mA, P,,$OO.O 50 - % V,,=28.0 V, 1,,=600.0 mA, P,,,=lOO.O W. F=500 MHZ - 3O:l - V,,=28.0 V, lDD=800.0 mA, PbbylOO.0 Gate Threshold Voltage V GSIW 2.0 6.0 V ForwardTransconductance GM 1.5 - input Capacitance c 15s - Output Capacitance Reverse Capacitance Power Gain lest Conditions GP Drain Efficiency mA‘ mA, AV,,=l .O V, 80 us Pulse’ W, F=SOO MHz . VSWR-T Load Mismatch Tolerance W, F=500 MHz - Per Side Specifications Subject to Change Wiihout Notice. M/A-COM, Inc. NoFth America: Tel. Fax (800) (800) 366-2266 618-8883 m Asia/Pacific: Tel. Fax +81 +81 (03) 3226-1671 (03) 3226-1451 n Europe: Tel. Fax +44 (1344) +44 (1344) 869 595 300 020 RF MOSFET Power Transistor, UF281 OOV lOOW, 28V v2.00 Typical Broadband EFFICIENCY Performance Curves POWER OUTPUT vs FREQUENCY P,,=lO W I,,=600 mA (Push-Pull Device) 80 P&O 120 vs SUPPLY VOLTAGE W I,,=600 mA F&O0 MHz loo 0 100 200 300 FREQUENCY 400 500 16 14 20 24 26 22 SUPPLY VOLTAGE(V) (MHz) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=600 mA (Push-Pull Device) 2 4 6 8 10 12 POWER INPUT(W) Specifications Subject to Change Without Notice. M/A-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 w Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 UF281OOV RF MOSFET Power Transistor, IOOW, 28V v2.00 Typical Device Impedance 7 Frequency (MHz) 100 5, (OHMS) 4.5 - j 6.0 Z,,,, (OHMS) 300 2.25 - j 1.75 7.5 + j 1 .O 500 1.5 + j 5.5 3.5 - j 3.5 14.5+j 0.5 ,I V,,=28 V, I,,=690 mA, P,,,=lOO.O Watts Z,, is the series equivalent input impedance of the device from gate to gate. is.tQe optimum series equivalent load impedance as measured from drain to drain. Z LOAD RF Test Fixture 0 0 0 PARTS Cl.c6 LlS.1 CHlP CAPACITOR. 2.OpF ATC B c2.Q CHIP CAPACITOR. 5OOCPF c4 CHIP CAPAC~OF!. 37pF ATC B C5 CHIP CAPACITOR. 25OpF ATC B c6.c7 CHIP CAPACTTOR. .015uF c%ClO CHIP CAPACTTOR. 5KvF ATC B Cl1 CHIP CAPAClTOR. O.BpF ATC B Cl2 ELECTROLtllC Rl .R4 RESISTOR. 27 OHM 25 WA-i-f CAPACITCR, 5ouF 50 VOLTS rum RESISTOR 22K OHM 25 WATT Ll INDUCTOR. 5 TURNS OF NO. 18 AWG ON ‘.lO K INDUCTOR. 10 TURNS OF NC. 22 AWG ON R4 Tl ,:, BALUN TRANSFORMER 50 0”M SEMI-RIGID COAX ‘.OBS X 3’ LONG 72 ,:I BALUN TRANSFORMER. 25 C+iM SEMI-RIGID COAX T3 13 BALUN TRANSFORMER. 10 OHM SEMI-RIGIG COAX 14 ,:, BALUN TRANSFORMER. 50 OHM SEMI-RIGID COAX 91 uF261oov ‘.070’ X 2.5’ LONG ‘.070.X 2.5’ LONG ‘.OW X 4’ LONG Specifications Subject BOARD ROGERS 5870. .Ml’lliICK JlJ2 CONNECTOR TYPE-N J3J4JS BANANA JACK HEATSINK FINNED ALUMINUM, DIN 7305OlB2-03 to Change Without Notice. 9-295 WA-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020