RF MOSFET Power 100 - 500 MHz Transistor, 2OW, 28V UF2820P v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband l Common Source Configuration l Lower Noise Floor Operation Absolute Maximum Ratings at 25°C Parameter Symbol Units 65 V V05 Drain-Source Voltage 1 Gate-Source Voltage Rating I VGS I 20 I v Drain-Source Current IDS 2.8 A Power Dissipation PD 53 W Junction Temperature T, 200 “C I StorageTemperature I 1 -55to+150 TSTG I I “C ( 1 Thermal Resistance Electrical Characteristics at 25°C Parameter Drain-Source Breakdown Voltage Symbol Min Max Units BV,,, 65 - V V,,=O.O V, 1,,=4.0 mA‘ 2.0 mA V,,=28.0 V, V,,=O.O V’ Drain-Source Leakage Current ‘DSS Gate-Source Leakage Current ‘ass 1 1 lest Conditions , I I 2.0 pA V&20 2.0 6.0 V V&O.0 V, 1,,=200.0 mA’ .160 - S V&O.0 V, 1,,=200.0 mA, AV,,=l .O V, 80 us Pulse’ CES 14 pF V,,=28.0 V, F=l .OMHz’ Output Capacitance Cass 10 pF ‘.‘,,=28.0 V, F=l .OMHz’ Reverse Capacitance CRSS 4.8 pF V,,=28.0 V, F=l .OMHz’ dB V,,=28.0 V, 1,,=200.0 mA. P“VI -.._=20.0 W. F=500 MHz --~ -- % I I 1 2O:l 1 - V,D=28.0 V, 1,,=200.0 mA, P,U,=20.0 W, F=500 MHz 1 ( V,,=28.0 V, 1,,=200.0 mA, P,,p20.0 W, FSOO MHz GateThreshold Voltage VGWHI Forward Transconductance GM _Input Capacitance Power Gain I Drain Efficiency G./ I 50 qD VSWR-T Load Mismatch Tolerance 10 - , - I v, v,,=o.o V’ * Per Side Specifications MIA-COM, Subject to Change Without Notice. inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 l Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 = Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 1 RF MOSFET Power Transistor, UF282OP 2OW, 28V v2.00 Typical Broadband Performance CAPACITANCES Curves POWER OUTPUT vs VOLTAGE P,,=l F=l.OMHz vs VOLTAGE mA F=500 MHz .O W I,,=200 30 12 .I 20 15 10 5 30 25 10 EFFICIENCY GAIN vs FREQUENCY V,,=28 V P,,p20 25 15 35 vs FREQUENCY mA PO520 W F=500 MHz I,,=200 W I,,=200 mA 30 ‘O/ -I 5aL 200 100 FREQUENCY 100 500 400 300 200 300 FREQUENCY (MHz) 400 500 (MHz) POWER OUTPUT vs POWER INPUT V,,=28 V I,,=200 mA 25 1 , J 0.05 0.10 0.20 0.40 0.60 0.60 1.00 POWER INPUT(W) Specifications North America: Subject to Change Without Notice. Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: M/A-COM, Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, UF282OP 2OW, 28V v2.00 Typical Device Impedance Frequency (MHz) Z,, (OHMS) z LOAD (OHMS) 100 9.5 - j 60.0 4.0 + j 68.0 300 5.0 - j 35.0 40.0 + j 48.0 500 2.0 - i 22.0 / V,,=28 Z,, is the series equivalent input impedance is the optimum series equivalent Z LoAD‘ 36.0 + ,i 34.0 I I I V, I,,=200 mA, P,,,=20.0 ,I Watts of the device from gate to gate. load impedance as measured from drain to drain. RF Test Fixture PAR cl c2l 3, 4. 5 c6 c7 Qdpf go, 2,OPF .01%4f IL 12 14, 17 c9, 134 18 cl5 Cl6 Tl T2R 2B T3 u 2 3, 4, 5 Specifications T S LIS T UPf 56t@f 6.8pf 6eoPf souf mv. O.luf 2.50’ OF 50 MM <.085’ DD> SEMI RIGID COAX 2.50’ OF 25 OHM <.070’ OD) SEMI RIGID COAX 2.W OF 50 OHM <.085’ oD> SfMI RIGID COAX 14 TURNS OF NU 28 AWG ON TOROID CI3RE Sub!ect to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03)3226-1451 n Europe: Tel. +44 (1344)869 Fax +44(1344)300 595 020 I