RF MOSFET Power Transistor, ISW, 12V 2 - 175 MHz DU1215S Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications . w C ISS Input Capacitance OSS pF VD,=12.0 V, F=l .O MHz 60 pF V&2.0 V, F=l .OMHz V, F=l .OMHz 50 Output Capacitance C Reverse Capacitance Gss - 12 pF V&2.0 Power Gain GP 9.5 - dB V,,=12.0 V, lDcl=lOOmA. PO*1 5 W, F=175 MHz Drain Efficiency % 60 - % VD,=12.0 V, l&O0 VSWR-T - 3O:l - VDD=12.0V, I,,=100 mA, PO,=15 W, F=l75 MHz Load Mismatch Tolerance mA, PO,=15 W, F=175 MHZ Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 15W, 12V DU1215S v2.00 Typical Device Impedance Frequency (MHz) Z,, (OHMS) Z LOAD (OHMS) 30 3.0 - j 25 4.0 - j 3.0 100 3.0-j 3.5-j1.5 175 5.0 - j 8 V,,=12 Z,, is the series equivalent input impedance isthe optimum series equivalent Z LOAD 15 4.0 + j 0.0 V, I,,=1 00 mA, P,,,=l5 Watts of the device from gate to source. load impedance RF Test Fixture as measured from drain to ground. VGS VDS J3 J4 VDS = 12 VOLTS IDO= -1, Cl0 lOOmA cc. L4 RF IN - - Cl1 1 - - I - - L3 01 Jl 1 T II Al T w PARTS LIST Cl .a TRIMMER CAPAClTOR CSGQF c2.c7 TRIMMER CAPACITOR 44opF C3.C6 SEMCO wc5 FEEDTHROUGH c9 SEMCO CAPACITOR CAPACITOR Cl0 MONOLITHIC Cl1 ELECTROLMIC NO. 12 AWG COPPER 6 TURNS O.OluF 5OuF 50 V. WIRE X 1‘ OF NO. 20 AWG ENAMEL WIRE ON CLOSE WOUND 12 TURNS L4 CAPACITOR CAPACITOR Ll ,L3 O.OOluF lDOOpF CERAMIC 12 ‘025’. 3OpF CAPACfTOR OF NO. 20 AWG ON ‘0.29. CLOSE WOUND Specifications Film RESISTOR a1 DU1215S BOARD FR4 0.062 Subject to Change Wtiout 1OOK OHMS Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. t81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel. t44 (1344) 869 595 Fax +44 (1344) 300 020 I RF MOSFET Power Transistor, DU1215S 15W, 12V v2.00 Typical Broadband Performance EFFICIENCY Curves GAIN vs FREQUENCY vs FREQUENCY VD,=l 2 V IDo= 00 mA P,,,.=l5 W V,,=l2 V IDO= 00 mA P,,fl5 W 30 8o 8 25 10 0 50 100 FREQUENCY POWER OUTPUT V,,=l2 0.1 0.2 0.3 0.5 200 1 25 50 100 FREQUENCY (MHZ) 0.75 V,,=12 1.5 2 2.5 V F=l75 MHz Ppl VOLTAGE .O W SUPPLY VOLTAGE (V) Notice. M/A-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 175 3 (W) Subject to Change Wiiaut 150 (MHz) POWER OUTPUT vs SUPPLY vs POWER INPUT V I,,=1 00 mA POWER INP”: Specifications 150 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020