MA-COM DU1215S

RF MOSFET Power Transistor, ISW, 12V
2 - 175 MHz
DU1215S
Features
l
l
l
l
l
l
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
Specifically Designed for 12 Volt Applications
. w
C ISS
Input Capacitance
OSS
pF
VD,=12.0 V, F=l .O MHz
60
pF
V&2.0
V, F=l .OMHz
V, F=l .OMHz
50
Output Capacitance
C
Reverse Capacitance
Gss
-
12
pF
V&2.0
Power Gain
GP
9.5
-
dB
V,,=12.0 V, lDcl=lOOmA. PO*1 5 W, F=175 MHz
Drain Efficiency
%
60
-
%
VD,=12.0 V, l&O0
VSWR-T
-
3O:l
-
VDD=12.0V, I,,=100 mA, PO,=15 W, F=l75 MHz
Load Mismatch Tolerance
mA, PO,=15 W, F=175 MHZ
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
RF MOSFET Power Transistor,
15W, 12V
DU1215S
v2.00
Typical Device Impedance
Frequency (MHz)
Z,, (OHMS)
Z LOAD
(OHMS)
30
3.0 - j 25
4.0 - j 3.0
100
3.0-j
3.5-j1.5
175
5.0 - j 8
V,,=12
Z,, is the series equivalent
input impedance
isthe optimum series equivalent
Z LOAD
15
4.0 + j 0.0
V, I,,=1 00 mA,
P,,,=l5
Watts
of the device from gate to source.
load impedance
RF Test Fixture
as measured
from drain to ground.
VGS
VDS
J3
J4
VDS = 12 VOLTS
IDO=
-1,
Cl0
lOOmA
cc.
L4
RF IN
-
-
Cl1
1
-
-
I
-
-
L3
01
Jl
1
T
II
Al
T
w
PARTS LIST
Cl .a
TRIMMER
CAPAClTOR
CSGQF
c2.c7
TRIMMER
CAPACITOR
44opF
C3.C6
SEMCO
wc5
FEEDTHROUGH
c9
SEMCO
CAPACITOR
CAPACITOR
Cl0
MONOLITHIC
Cl1
ELECTROLMIC
NO. 12 AWG COPPER
6 TURNS
O.OluF
5OuF 50 V.
WIRE X 1‘
OF NO. 20 AWG ENAMEL
WIRE ON
CLOSE WOUND
12 TURNS
L4
CAPACITOR
CAPACITOR
Ll ,L3
O.OOluF
lDOOpF
CERAMIC
12
‘025’.
3OpF
CAPACfTOR
OF NO. 20 AWG ON ‘0.29.
CLOSE WOUND
Specifications
Film
RESISTOR
a1
DU1215S
BOARD
FR4 0.062
Subject to Change Wtiout
1OOK OHMS
Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
m Asia/Pacific:
Tel. t81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Europe:
Tel. t44 (1344) 869 595
Fax +44 (1344) 300 020
I
RF MOSFET Power Transistor,
DU1215S
15W, 12V
v2.00
Typical Broadband
Performance
EFFICIENCY
Curves
GAIN vs FREQUENCY
vs FREQUENCY
VD,=l 2 V IDo= 00
mA P,,,.=l5
W
V,,=l2
V IDO= 00 mA P,,fl5
W
30
8o 8
25
10
0
50
100
FREQUENCY
POWER OUTPUT
V,,=l2
0.1
0.2
0.3
0.5
200
1
25
50
100
FREQUENCY
(MHZ)
0.75
V,,=12
1.5
2
2.5
V F=l75
MHz Ppl
VOLTAGE
.O W
SUPPLY VOLTAGE (V)
Notice.
M/A-COM,
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
175
3
(W)
Subject to Change Wiiaut
150
(MHz)
POWER OUTPUT vs SUPPLY
vs POWER INPUT
V I,,=1 00 mA
POWER INP”:
Specifications
150
m Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Europe:
Inc.
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020