XF r an AMP company = RF MOSFET 2 - 175 MHz Power Transistor, lOW, 28V DU2810S Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Low Noise Floor Absolute Maximum Ratinas at 25°C ( Parameter 1 Symbol 1 Rating 1 Drain-SourceVoltage ) 1 65 V, 1 Units 1 I I v Gate-Source Voltage V OS 20 V Drain-Source Current ‘0s 2.8 A PO 35’ W Power Dissipation ( JunctionTemperature 1 T, StorageTemperature T ST0 Thermal Resistance eJC Specifications M/A-COM, ) 200 1 -65to+150 2 “C 1 “C “Cl-W Subject to Change Without Notice. 9-27 inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. t81 (03) 3226-1671 Fax +81 (03) 3226-1451 H Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF BAOSFET Power Transistor, IOW, 28v Typical Device \mpedance Frequency (MHz) 30 50 100 200 *,, (OHMS) *,onD (OHMS) 27.0 -j 11.0 23.0 - j 3.0 24.0 - j 15.0 19.0 - j 5.0 18.0 -j 18.0 14.0 - 6.0 j 9.0 -j 5.0 12.0 - j 19.0 v&3 Z,, is the series equivalent 2 LOAD is the series equivalent input impedance load impedance V, 1,,=100 mA, Po,,=lO.O ,I Watts of the device from gate to source. as measured from drain to ground. RF Test Fixture +“r;s +“m INPUT c2 Cl c3 C6 20 pF, UNELCU 500 pF, UNELCCI 1000 pF, UNELCO 5 uF ELECTROLYTIC Rl 12K OHM L2 Ll L3 4 TURNS 2 TURNS 5 TURNS Ql DU2810S c4 c5 9-28 OF Nil, 16 AWG ON JO’ ID OF Nil. 16 AWG ON .35’ ID OF NO. 16 AWG UN 035’ ID Specifications Subject to Change Without Notice. North America: Tel. (800) 366-2266 Fax (800) 618-8883 l Asia/Pacific: M/A-COM, Inc. Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 # Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020