ETC DU1230S

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=-
an AMP company
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RF MOSFET Power Transistor, 3OW, 12V
2 - 175 MHz
DUI 230s
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Bipolar Devices
Specifically Designed for 12 Volt Applications
. .
Absolute Maximum Ratings at 25°C
1 Symbol
Parameter
1
1 Units
Rating
1
Drain-SourceVoltage
VDS
40
V
Gate-Source Voltage
V0s
20
V
Drain-Source Current
‘Ds
8
A
175
I w I
200
“C
1 Power Dissipation
I
PO
Junction Temperature
TJ
Storage Temperature
T STG
Thermal Resistance
I
I
-55to+150
BJCI
“C
1
I “C/w
I
1
E
1 6.22
1 6.48
1 245
1 255
F
5.64
5.79
222
22s
G
1 2.92
1
3.30
1
.llS
1
1
,130
Electrical Characteristics at 25°C
V,,=12.0 V, F=l.O MHz
Input Capacitance
Output Capacitance
C0%
120
pF
V&2.0
V, F=l .OMHz
ReverseCapacitance
C Rss
24
pF
V&2.0
V, F=l .OMHz
-
dB
Vb,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz
Power Gain
9.0
GP
Drain Efficiency
Load Mismatch Tolerance
9D
50
-
%
V,,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz
VSWR-T
-
3O:l
-
V,,=l2.0
V, I,,=200 mA, PO,,=30 W, F=l75 MHz
SpecificationsSubject to ChangeWithoutNotice.
MIA-COM,
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Europe:
Inc.
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
RF MOSFET Power Transistor,
DU1230S
3OW, 12V
v2.00
Typical Broadband Performance
EFFICIENCY
V,,=lZ
Curves
GAIN vs FREQUENCY
vs FREQUENCY
V I,,=200
mA
Poe30
v,,=12
W
V IDo=
mA PouT=30 W
20
60
70
g
60
$
50
2
ii
b
u.
w
40.
30.
12
-
20
10
-
10
0
50
FREOUENCY
150
25
200
50
100
FREQUENCY
(MHz)
150
175
(MHz)
POWER OUTPUT vs SUPPLY VOLTAGE
I,,=200
mA
F=l75
MHz Pp3.0
W
40
g
30
I
5
5
0
20
5
3
g
10
0
0
0.2
0.3
1
2
3
4
5
6
7
6
15
10
SUPPLY VOLTAGE (V)
POWER INPUT(W)
Specifications Subject to Change Without Notice.
M/A-COM,
inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
w
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
m
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
RF MOSFET Power Transistor,
3OW, 12V
DU1230S
v2.00
Typical Device Impedance
Frequency
(MHz)
Z,, (OHMS)
Z LDAD(OHMS)
30
12.0 -j 14.0
2.5 + j 3.0
100
4.0 - j 8.0
2.5-j
175
2.0 - j 2.5
2.5 - i 0.5
1.0
V,,=12 V, I,,=200 mA, PO,,.=30 Watts
Z,, is the series equivalent input impedance of the device from gate to source.
Z LOAD
is the tptimum series equivalent load impedance as measured from drain to ground.
RF Test Fixture
VGS
VDS
J3
J4
VDS = 12 VOLTS
h
Cl0
IDO = POOmA
CCL
L4
--
Cl1
I
--
I
--
t;
C5
A-
Ari
;i-
RF IN
Jl
Cl
C6
F-
T c3
c2
2
-L
-
-
PARTS LIST
Cl.C6
ARC0
NO. 462 TRIMMER
CAPACITOR
5-8opF
c2.c7
ARC0
NO. 422 TRIMMER
CAPACITOR
4-4opF
c3
SEMCO
C4,CS
FEEDTHROUGH
CAPACITOR
SopF
C6
SEMCO
CAPACITOR
3OpF
c9
SEMCO
CAPACKOR
~OOOPF
Cl0
MONOLITHIC
Cl1
ELECTROLMIC
CAPACITOR
CERAMIC
CAPACITOR
CAPACITOR
Ll .w
NO. 12 AWG COPPER
L2
6 TURNS
O.OOluF
O.OluF
5OuF 50 V.
WIRE X 1’
OF NO. 20 AWG ENAMEL
WIRE ON
‘0.25’. CLOSE WOUND
L4
12 TURNS
OF NO. 20 AWG ON ‘025’.
CLOSE WOUND
Rl.PxZ
RESISTOR
Ql
DU123OS
1OOK OHMS
FR4 0.062
Specifications
Subject
to Change
Without
Notice.
MIA-COM,
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
m Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
n
Europe:
inc.
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020