= ----- =- an AMP company = = RF MOSFET Power Transistor, 3OW, 12V 2 - 175 MHz DUI 230s Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices Specifically Designed for 12 Volt Applications . . Absolute Maximum Ratings at 25°C 1 Symbol Parameter 1 1 Units Rating 1 Drain-SourceVoltage VDS 40 V Gate-Source Voltage V0s 20 V Drain-Source Current ‘Ds 8 A 175 I w I 200 “C 1 Power Dissipation I PO Junction Temperature TJ Storage Temperature T STG Thermal Resistance I I -55to+150 BJCI “C 1 I “C/w I 1 E 1 6.22 1 6.48 1 245 1 255 F 5.64 5.79 222 22s G 1 2.92 1 3.30 1 .llS 1 1 ,130 Electrical Characteristics at 25°C V,,=12.0 V, F=l.O MHz Input Capacitance Output Capacitance C0% 120 pF V&2.0 V, F=l .OMHz ReverseCapacitance C Rss 24 pF V&2.0 V, F=l .OMHz - dB Vb,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz Power Gain 9.0 GP Drain Efficiency Load Mismatch Tolerance 9D 50 - % V,,=12.0 V, I,,=200 mA, PO,=30 W, F=175 MHz VSWR-T - 3O:l - V,,=l2.0 V, I,,=200 mA, PO,,=30 W, F=l75 MHz SpecificationsSubject to ChangeWithoutNotice. MIA-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 n Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, DU1230S 3OW, 12V v2.00 Typical Broadband Performance EFFICIENCY V,,=lZ Curves GAIN vs FREQUENCY vs FREQUENCY V I,,=200 mA Poe30 v,,=12 W V IDo= mA PouT=30 W 20 60 70 g 60 $ 50 2 ii b u. w 40. 30. 12 - 20 10 - 10 0 50 FREOUENCY 150 25 200 50 100 FREQUENCY (MHz) 150 175 (MHz) POWER OUTPUT vs SUPPLY VOLTAGE I,,=200 mA F=l75 MHz Pp3.0 W 40 g 30 I 5 5 0 20 5 3 g 10 0 0 0.2 0.3 1 2 3 4 5 6 7 6 15 10 SUPPLY VOLTAGE (V) POWER INPUT(W) Specifications Subject to Change Without Notice. M/A-COM, inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 w Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 m Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 3OW, 12V DU1230S v2.00 Typical Device Impedance Frequency (MHz) Z,, (OHMS) Z LDAD(OHMS) 30 12.0 -j 14.0 2.5 + j 3.0 100 4.0 - j 8.0 2.5-j 175 2.0 - j 2.5 2.5 - i 0.5 1.0 V,,=12 V, I,,=200 mA, PO,,.=30 Watts Z,, is the series equivalent input impedance of the device from gate to source. Z LOAD is the tptimum series equivalent load impedance as measured from drain to ground. RF Test Fixture VGS VDS J3 J4 VDS = 12 VOLTS h Cl0 IDO = POOmA CCL L4 -- Cl1 I -- I -- t; C5 A- Ari ;i- RF IN Jl Cl C6 F- T c3 c2 2 -L - - PARTS LIST Cl.C6 ARC0 NO. 462 TRIMMER CAPACITOR 5-8opF c2.c7 ARC0 NO. 422 TRIMMER CAPACITOR 4-4opF c3 SEMCO C4,CS FEEDTHROUGH CAPACITOR SopF C6 SEMCO CAPACITOR 3OpF c9 SEMCO CAPACKOR ~OOOPF Cl0 MONOLITHIC Cl1 ELECTROLMIC CAPACITOR CERAMIC CAPACITOR CAPACITOR Ll .w NO. 12 AWG COPPER L2 6 TURNS O.OOluF O.OluF 5OuF 50 V. WIRE X 1’ OF NO. 20 AWG ENAMEL WIRE ON ‘0.25’. CLOSE WOUND L4 12 TURNS OF NO. 20 AWG ON ‘025’. CLOSE WOUND Rl.PxZ RESISTOR Ql DU123OS 1OOK OHMS FR4 0.062 Specifications Subject to Change Without Notice. MIA-COM, North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: inc. Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020