SUD50P06-15L Vishay Siliconix P-Channel 60 V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A) 0.015 at VGS = - 10 V - 50d 0.020 at VGS = - 4.5 V - 50 • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Compliant to RoHS Directive 2002/95/EC RoHS COMPLIANT S TO-252 G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUD50P06-15L-E3 (Lead-(Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy Power Dissipation L = 0.1 mH TC = 25 °C TA = 25 °C V - 50d ID - 39 IDM - 80 IAR - 50 EAR 125 A mJ c 136 PD W 3b, c TJ, Tstg Operating Junction and Storage Temperature Range Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Symbol t 10 s Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.82 1.1 Unit °C/W Notes: a. Duty cycle 1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. Document Number: 72250 S10-2545-Rev. C, 08-Nov-10 www.vishay.com 1 SUD50P06-15L Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS -1 VDS = - 48 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 48 V, VGS = 0 V, TJ = 175 °C - 150 ID(on) Forward Transconductancea RDS(on) ± 100 VDS = - 48 V, VGS = 0 V VDS = -5 V, VGS = - 10 V VGS = - 10 V, ID = - 17 A Drain-Source On-State Resistancea -3 - 50 µA 0.015 0.025 VGS = - 10 V, ID = - 50 A, TJ = 175 °C 0.030 VGS = - 4.5 V, ID = - 14 A 0.020 VDS = - 15 V, ID = - 17 A nA A 0.012 VGS = - 10 V, ID = - 50 A, TJ = 125 °C gfs V 61 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 4950 VGS = 0 V, VDS = - 25 V, f = 1 MHz 480 pF 405 110 VDS = - 30 V, VGS = - 10 V, ID = - 50 A 165 nC 19 Gate-Drain Charge Qgd 28 Turn-On Delay Timec td(on) 15 23 70 105 175 260 175 260 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDD = - 30 V, RL = 0.6 ID - 50 A, VGEN = - 10 V, RG = 6 tf Source-Drain Diode Ratings and Characteristics (TC = 25 ns °C)b IS - 50 Pulsed Current ISM - 80 Forward Voltagea VSD IF = - 50 A, VGS = 0 V 1.0 1.6 V trr IF = - 50 A, dI/dt = 100 A/µs 45 70 ns Continuous Current Reverse Recovery Time A Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72250 S10-2545-Rev. C, 08-Nov-10 SUD50P06-15L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 80 VGS = 10 V thru 4 V 70 70 60 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 3V 20 50 40 30 TC = 125 ° C 20 25 ° C 10 10 - 55 °C 0 0.0 0 0 1 2 3 4 5 0.5 Output Characteristics 2.0 2.5 3.0 3.5 4.0 70 80 0.025 R DS(on) - On-Resistance () 25 °C TC = - 55 °C 80 125 °C 60 40 20 0 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0.000 0 10 20 30 40 50 60 0 10 20 VGS - Gate-to-Source Voltage (V) 30 40 50 60 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 8000 VGS - Gate-to-Source Voltage (V) 7000 6000 C - Capacitance (pF) 1.5 Transfer Characteristics 100 g fs - Transconductance (S) 1.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Ciss 5000 4000 3000 2000 VDS = 30 V ID = 50 A 8 6 4 2 Coss 1000 Crss 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72250 S10-2545-Rev. C, 08-Nov-10 50 60 0 20 40 60 80 100 120 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUD50P06-15L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 2.0 VGS = 10 V ID = 17 A I S - Source Current (A) 1.6 (Normalized) R DS(on) - On-Resistance 1.8 1.4 1.2 1.0 TJ = 150 °C TJ = 25 °C 10 0.8 0.6 - 50 1 - 25 0 25 50 75 100 125 150 0.0 175 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 1.5 Source-Drain Diode Forward Voltage THERMAL RATINGS 100 60 IDM Limited Limited by R DS(on)* 50 I D - Drain Current (A) I D - Drain Current (A) P(t) = 0.0001 40 30 20 ID(on) Limited 10 P(t) = 0.001 TC = 25 °C Single Pulse P(t) = 0.01 10 1 0.1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 175 P(t) = 0.1 BVDSS Limited P(t) = 1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72250. www.vishay.com 4 Document Number: 72250 S10-2545-Rev. C, 08-Nov-10 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000