DTS1003 www.din-tek.jp P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω) ID (A) 1.2 at VGS = - 10 V - 0.69 1.3 at VGS = - 6.0 V - 0.66 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size Qg (Typ.) 7.7 APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies TO-236 (SOT-23) G 1 3 S D 2 Top View DTS1003 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Conduction)a, b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa, b IS L = 1.0 mH TA = 25 °C TA = 70 °C - 0.53 - 0.43 - 0.55 - 1.6 - 0.6 IAS 4.5 1.01 mJ 1.25 0.75 0.8 0.48 TJ, Tstg Operating Junction and Storage Temperature Range A - 1.0 EAS PD V - 0.69 IDM Pulsed Drain Current Continuous Source Current (Diode ID Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. 1 DTS1003 www.din-tek.jp SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = - 250 µA - 100 VGS(th) VDS = VGS, ID = - 250 µA - 2.5 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 150 V, VGS = 0 V -1 VDS = - 150 V, VGS = 0 V, TJ = 55 °C - 10 Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage VDS ≤ - 15 V, VGS = 10 V - 4.5 nA µA A - 1.6 VGS = - 10 V, ID = - 0.5 A 1.0 1.2 VGS = - 6.0 V, ID = - 0.5 A 1.05 1.3 gfs VDS = - 15 V, ID = - 0.5 A 2.2 VSD IS = - 1.0 A, VGS = 0 V 0.7 - 1.2 7.7 12 RDS(on) V Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 75 V, VGS = 10 V, ID ≅ - 0.5 A f = 1.0 MHz Ω 9 340 VDS = - 25 V, VGS = 0 V, f = 1 MHz nC 1.5 2.5 510 pF 30 16 Switchingc Turn-On Time Turn-Off Time Body Diode Reverse Recovery Charge td(on) tr td(off) tf Qrr VDD = - 75 V, RL = 75 Ω ID ≅ - 1.0 A, VGEN = - 10 V Rg = 6 Ω IF = 0.5 A, dI/dt = 100 A/µs 7 11 11 17 16 25 11 17 90 135 ns nC Notes: a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 DTS1003 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 1.6 VGS = 10 thru 5 V 1.4 1.4 1.2 I D - Drain Current (A) I D - Drain Current (A) 1.2 1.0 0.8 0.6 0.4 1.0 0.8 0.6 TC = 125 °C 0.4 0.2 - 55 °C 3V 0.0 0 2 4 25 °C 0.2 4V 6 8 0.0 10 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.00 500 400 1.50 1.25 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.75 VGS = 6 V 1.00 VGS = 10 V 0.75 Ciss 300 200 0.50 100 0.25 Coss 0.00 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Crss 0 30 ID - Drain Current (A) 60 100 110 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 2.5 VDS = 75 V ID = 0.5 A VGS = 10 V ID = 0.5 A 8 6 4 2 (Normalized) 2.0 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 90 1.5 1.0 0.5 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) Gate Charge 7 8 0.0 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 DTS1003 www.din-tek.jp TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 3 ID = 0.5 A RDS(on) - On-Resistance (Ω) 2.5 I S - Source Current (A) TJ = 150 °C 1 TJ = 25 °C 2.0 1.5 1.0 0.5 0.0 0.1 0 0.2 0.4 0.8 0.6 1.0 1.2 0 1.4 2 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.3 12 1.0 10 ID = 250 µA 0.7 8 Power (W) VGS(th) Variance (V) 4 0.4 0.1 6 4 TA = 25 °C - 0.2 - 0.5 - 50 2 - 25 0 25 50 85 75 95 0 100 0.01 0.1 10 Time (s) Threshold Voltage Single Pulse Power 10 IDM Limited Limited by R DS(on)* 10 µs 100 µs I D - Drain Current (A) 1 1 ms 0.1 10 ms ID(on) Limited 0.01 100 ms TA = 25 °C Single Pulse 10 s, 1 s 100 s, DC BVDSS Limited 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area 4 1 TJ - Temperature (°C) 1000 100 600 DTS1003 www.din-tek.jp THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 120 °C/W 0.02 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient . 5 Package Information www.din-tek.jp SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.95 BSC 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 1 Application Note www.din-tek.jp 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice Disclaimer www.din-tek.jp ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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