DINTEK DTU40N06

D56/
www.daysemi.jp
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
60
0.016 @ VGS = 10 V
40
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
D
TO-252
G
G
D
S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 175_C)b
TC = 25_C
TC = 125_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
L = 0.1 mH
TC = 25_C
Maximum Power Dissipation
TA = 25_C
Operating Junction and Storage Temperature Range
Unit
V
40
ID
30
IDM
60
IS
40
IAR
40
EAR
80
A
mJ
136b
PD
W
3a
TJ, Tstg
−55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
JJunction-to-Ambient
ti t A bi ta
Junction-to-Case
Symbol
t v 10 sec
Steady State
RthJA
RthJC
Typical
Maximum
15
18
40
50
0.85
1.1
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
1
D56/
www.daysemi.jp
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
VGS(th)
VDS = VGS, ID = 250 mA
2.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 125_C
50
VDS = 60 V, VGS = 0 V, TJ = 175_C
250
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage
g Drain Current
On-State Drain Currentb
IDSS
ID(on)
VDS = 5 V, VGS = 10 V
rDS(on)
VGS = 10 V, ID = 40 A, TJ = 125_C
0.027
VGS = 10 V, ID = 40 A, TJ = 175_C
0.037
40
VGS = 10 V, ID = 40 A
Drain-Source On-State Resistanceb
Forward Transconductanceb
4.0
gfs
nA
mA
m
A
0.013
VDS = 15 V, ID = 40 A
V
0.016
45
W
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain
Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Fall Timec
370
42
60
7
VDS = 40 V,, VGS = 10 V,, ID = 40 A
nC
13
Rg
0.5
td(on)
td(off)
pF
200
Qgd
tr
Turn-Off Delay Timec
1960
VGS = 0 V, VDS = 25 V, F = 1 MHz
VDD = 40 V, RL = 1.0 W
ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W
tf
2.7
12
20
52
80
25
38
10
15
W
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
40
A
Voltageb
VSD
IF = 40 A, VGS = 0 V
1.0
1.5
V
Source-Drain Reverse Recovery Time
trr
IF = 40 A, di/dt = 100 A/ms
45
70
ns
Diode Forward
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
2
D56/
www.daysemi.jp
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
VGS = 10 thru 7 V
80
60
I D − Drain Current (A)
I D − Drain Current (A)
80
6V
40
20
5V
3, 4 V
60
40
TC = 125_C
20
25_C
−55_C
0
0
0
2
4
6
8
10
0
VDS − Drain-to-Source Voltage (V)
1
2
3
4
5
6
7
VGS − Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
80
0.04
25_C
60
r DS(on)− On-Resistance ( W )
g fs − Transconductance (S)
TC = −55_C
125_C
40
20
0
0.03
0.02
VGS = 10 V
0.01
0.00
0
20
40
60
80
0
100
20
40
ID − Drain Current (A)
V GS − Gate-to-Source Voltage (V)
C − Capacitance (pF)
Ciss
1500
1000
Crss
500
100
60
75
Gate Charge
20
2500
2000
80
ID − Drain Current (A)
Capacitance
3000
60
Coss
0
VDS = 10 V
ID = 40 A
16
12
8
4
0
0
20
40
60
VDS − Drain-to-Source Voltage (V)
80
0
15
30
45
Qg − Total Gate Charge (nC)
3
D56/
www.daysemi.jp
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.4
100
VGS = 10 V
ID = 40 A
10
I S − Source Current (A)
rDS(on) − On-Resiistance
(Normalized)
2.0
1.6
1.2
0.8
TJ = 150_C
1
TJ = 25_C
0.1
0.4
0.0
−50
−25
0
25
50
75
100
125
150
0.01
175
0
TJ − Junction Temperature (_C)
0.3
0.6
0.9
1.2
VSD − Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
50
40
100
I D − Drain Current (A)
I D − Drain Current (A)
Safe Operating Area
1000
30
20
10
0
25
0
50
75
100
125
150
100 ms
10
1 ms
10 ms
1
0.1
175
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
100 ms
1 s, dc
TC = 25_C
Single Pulse
TC − Case Temperature (_C)
1
10 ms
Limited by rDS(on)
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
4
1
10
30
Package Information
TO-252AA CASE OUTLINE
E
C2
L3
H
D
b2
C
A1
D1
e1
L
gage plane height (0.5 mm)
e
L5
L4
b
INCHES
MILLIMETERS
A
b3
DIM.
MIN.
MAX.
MIN.
MAX.
A
2.18
2.38
0.086
0.094
A1
-
0.127
-
0.005
b
0.64
0.88
0.025
0.035
b2
0.76
1.14
0.030
0.045
b3
4.95
5.46
0.195
0.215
C
0.46
0.61
0.018
0.024
C2
0.46
0.89
0.018
0.035
D
5.97
6.22
0.235
0.245
D1
5.21
-
0.205
0.265
E
6.35
6.73
0.250
E1
4.32
-
0.170
-
H
9.40
10.41
0.370
0.410
e
2.28 BSC
0.090 BSC
e1
4.56 BSC
0.180 BSC
L
1.40
1.78
0.055
0.070
L3
0.89
1.27
0.035
0.050
L4
-
1.02
-
0.040
L5
1.14
1.52
0.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12
DWG: 5347
E1
Note
• Dimension L3 is for reference only.
1
Application Note
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
0.224
0.243
0.087
(2.202)
0.090
(2.286)
(10.668)
0.420
(6.180)
(5.690)
0.180
0.055
(4.572)
(1.397)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
1
Legal Disclaimer Notice
www.daysemi.jp
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Din-Tek”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Din-Tek’s knowledge of typical
requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Din-Tek’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death.
Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
1