D56/ www.daysemi.jp N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 60 0.016 @ VGS = 10 V 40 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C)b TC = 25_C TC = 125_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%) L = 0.1 mH TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range Unit V 40 ID 30 IDM 60 IS 40 IAR 40 EAR 80 A mJ 136b PD W 3a TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter JJunction-to-Ambient ti t A bi ta Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 0.85 1.1 Unit _C/W C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. 1 D56/ www.daysemi.jp SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 2.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 125_C 50 VDS = 60 V, VGS = 0 V, TJ = 175_C 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 40 A, TJ = 125_C 0.027 VGS = 10 V, ID = 40 A, TJ = 175_C 0.037 40 VGS = 10 V, ID = 40 A Drain-Source On-State Resistanceb Forward Transconductanceb 4.0 gfs nA mA m A 0.013 VDS = 15 V, ID = 40 A V 0.016 45 W S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Fall Timec 370 42 60 7 VDS = 40 V,, VGS = 10 V,, ID = 40 A nC 13 Rg 0.5 td(on) td(off) pF 200 Qgd tr Turn-Off Delay Timec 1960 VGS = 0 V, VDS = 25 V, F = 1 MHz VDD = 40 V, RL = 1.0 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W tf 2.7 12 20 52 80 25 38 10 15 W ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 40 A Voltageb VSD IF = 40 A, VGS = 0 V 1.0 1.5 V Source-Drain Reverse Recovery Time trr IF = 40 A, di/dt = 100 A/ms 45 70 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. 2 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 100 100 VGS = 10 thru 7 V 80 60 I D − Drain Current (A) I D − Drain Current (A) 80 6V 40 20 5V 3, 4 V 60 40 TC = 125_C 20 25_C −55_C 0 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 80 0.04 25_C 60 r DS(on)− On-Resistance ( W ) g fs − Transconductance (S) TC = −55_C 125_C 40 20 0 0.03 0.02 VGS = 10 V 0.01 0.00 0 20 40 60 80 0 100 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) Ciss 1500 1000 Crss 500 100 60 75 Gate Charge 20 2500 2000 80 ID − Drain Current (A) Capacitance 3000 60 Coss 0 VDS = 10 V ID = 40 A 16 12 8 4 0 0 20 40 60 VDS − Drain-to-Source Voltage (V) 80 0 15 30 45 Qg − Total Gate Charge (nC) 3 D56/ www.daysemi.jp TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.4 100 VGS = 10 V ID = 40 A 10 I S − Source Current (A) rDS(on) − On-Resiistance (Normalized) 2.0 1.6 1.2 0.8 TJ = 150_C 1 TJ = 25_C 0.1 0.4 0.0 −50 −25 0 25 50 75 100 125 150 0.01 175 0 TJ − Junction Temperature (_C) 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature 50 40 100 I D − Drain Current (A) I D − Drain Current (A) Safe Operating Area 1000 30 20 10 0 25 0 50 75 100 125 150 100 ms 10 1 ms 10 ms 1 0.1 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 100 ms 1 s, dc TC = 25_C Single Pulse TC − Case Temperature (_C) 1 10 ms Limited by rDS(on) Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 4 1 10 30 Package Information TO-252AA CASE OUTLINE E C2 L3 H D b2 C A1 D1 e1 L gage plane height (0.5 mm) e L5 L4 b INCHES MILLIMETERS A b3 DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 E1 Note • Dimension L3 is for reference only. 1 Application Note RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 1 Legal Disclaimer Notice www.daysemi.jp Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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