VO617A www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, High Reliability, 5300 VRMS FEATURES A 1 4 C C 2 3 E • • • • • • • • • • • • Operating temperature from -55 °C to +110 °C Good CTR linearity depending on forward current Isolation test voltage, 5300 VRMS High collector emitter voltage, VCEO = 80 V Low saturation voltage Fast switching times Low CTR degradation Temperature stable Low coupling capacitance End stackable, 0.100" (2.54 mm) spacing High common mode interference immunity Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS 17918-24 • • • • • DESCRIPTION The 110 °C rated VO617A feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 package. The coupling devices are designed for signal transmission between two electrically separated circuits. The couplers are end-stackable with 2.54 mm spacing. Creepage and clearance distances of > 8.0 mm are achieved with option 6. This version complies with IEC 60950 (DIN VDE 0805) for reinforced insulation up to an operation voltage of 400 VRMS or DC. Specifications subject to change. AC adapters SMPS PLC Factory automation Game consoles AGENCY APPROVALS Safety application model number covering all products in this data sheet is VO617A. This model number should be used when consulting safety agency documents. • UL1577, file no. E52744 • cUL tested to CSA 22.2 bulletin 5A • DIN EN 60747-5-5 (VDE 0884-5), available with option 1 • BSI IEC 60950; IEC 60065 • FIMKO EN 60065, EN 60950-1 • CQC GB8898-2011 ORDERING INFORMATION V O 6 1 7 A - PART NUMBER # X CTR BIN 50 to 600 VO617A 40 to 80 VO617A-1 63 to 125 VO617A-2 DIP-4, 400 mil, option 6 - - - SMD-4, option 7 - - 50 to 600 40 to 80 DIP-4, 400 mil, option 6 # # PACKAGE OPTION AGENCY CERTIFIED/PACKAGE UL, cUL, BSI, FIMKO DIP-4 VDE, UL, cUL, BSI, FIMKO 0 VO617A2X007T 63 to 125 - - - SMD-4, option 7 - VO617A1X017T VO617A2X017T SMD-4, 400 mil, option 8 - - - CTR (%) 5 mA 100 to 200 160 to 320 VO617A-3 VO617A-4 VO617AVO617A3X006 4X006 VO617AVO617A3X007T 4X007T 100 to 200 160 to 320 VO617AVO617A3X016 4X016 VO617AVO617A3X017T 4X017T VO617A3X018T DIP-4 Option 6 7.62 mm 10.16 mm Option 7 Option 8 > 8 mm 9.27 mm T TAPE AND REEL 80 to 160 VO617A-7 130 to 260 VO617A-8 200 to 400 VO617A-9 - - - - - - 80 to 160 VO617A7X016 VO617A7X017T 130 to 260 VO617A8X016 VO617A8X017T 200 to 400 VO617A9X016 VO617A9X017T - - - Note • Additional options may be possible, please contact sales office. Rev. 2.5, 27-Aug-15 Document Number: 83430 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO617A www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER CONDITIONS SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA tp 10 μs Forward surge current IFSM 1.5 A Pdiss 70 mW Collector emitter voltage VCEO 80 V Emitter collector voltage VECO 7 V IC 50 mA ICM 100 mA Pdiss 150 mW LED power dissipation OUTPUT Collector current tp/T = 0.5, tp 10 ms Collector peak current Ouput power dissipation COUPLER Total power dissipation Ptot 200 mW Operation temperature Tamb -55 to +110 °C Storage temperature range Tstg -55 to +150 °C Tsld 260 °C Soldering temperature 2 mm from case, 10 s Ptot - Total Power Dissipation (mW) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. 250 Coupled device 200 150 Detector 100 50 LED 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 1 - Total Power Dissipation vs. Ambient Temperature Rev. 2.5, 27-Aug-15 Document Number: 83430 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO617A www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER INPUT Forward voltage Reverse current Junction capacitance OUTPUT TEST CONDITION PART IF = 60 mA VR = 6 V VR = 0 V, f = 1 MHz VCE = 10 V Collector emitter leakage current Collector emitter capacitance Collector emitter breakdown voltage Emitter collector breakdown voltage COUPLER Collector emitter saturation voltage Coupling capacitance VO617A-1 VO617A-2 VO617A-3 VO617A-4 VO617A-7 VO617A-8 VO617A-9 SYMBOL MIN. TYP. MAX. UNIT VF IR Cj 1 1.35 0.01 13 1.65 10 V μA pF 2 2 5 5 5 5 5 5.2 50 50 100 100 100 100 100 0.25 0.4 0.4 ICEO VCE = 5 V, f = 1 MHz IC = 1 mA IE = 100 μA CCE BVCEO BVECO IF = 5 mA, IC = 1.0 mA f = 1 MHz VCEsat CC nA pF V V 80 7 V pF Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified) PARAMETER IC/IF TEST CONDITION IF = 5 mA, VCE = 5 V PART SYMBOL MIN. MAX. UNIT VO617A CTR 50 TYP. 600 % VO617A-1 CTR 40 80 % VO617A-2 CTR 63 125 % VO617A-3 CTR 100 200 % VO617A-4 CTR 160 320 % VO617A-7 CTR 80 160 % VO617A-8 CTR 130 260 % VO617A-9 CTR 200 400 % MAX. UNIT SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION CTR BIN SYMBOL MIN. TYP. NON-SATURATED Rise and fall time Turn-on time Turn-off time Cut-off frequency IF = 5 mA, VCC = 5 V, RL = 75 tr, tf 2 IF = 5 mA, VCC = 5 V, RL = 75 ton 3 μs toff 2.3 μs fctr 190 kHz IF = 5 mA, VCC = 5 V, RL = 75 μs SATURATED Turn-on time IF = 5 mA ton 6 μs Turn-off time IF = 5 mA toff 25 μs Rise time IF = 5 mA tr 4.6 μs Fall time IF = 5 mA tf 15 μs Rev. 2.5, 27-Aug-15 Document Number: 83430 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO617A www.vishay.com IF Vishay Semiconductors +5V IF IF 0 0 tp IC R G = 50 Ω tp = 0.01 T 100 % 90 % t p = 50 µs Channel I Oscilloscope R L = 1 MΩ C L = 20 pF Channel II 50 Ω 10 % 0 tr RL td ts t on 95 10804-3 tp td tr t on (= td + tr) Fig. 2 - Test Circuit, Non-Saturated Operation IF t +5V I F = 10 mA 0 Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 4 - Switching Times IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 3 - Test Circuit, Saturated Operation SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION Climatic classification According to IEC 68 part 1 Pollution degree According to DIN VDE 0109 Comparative tracking index Maximum rated withstanding isolation voltage SYMBOL VALUE UNIT 55/115/21 2 Insulation group IIIa CTI 175 According to UL1577, t = 1 min VISO 4470 VRMS Tested withstanding isolation voltage According to UL1577, t = 1 s VISO 5300 VRMS Maximum transient isolation voltage According to DIN EN 60747-5-5 VIOTM 8000 Vpeak Maximum repetitive peak isolation voltage According to DIN EN 60747-5-5 VIORM 890 Vpeak Tamb = 25 °C, VIO = 500 V RIO 1012 Tamb = 100 °C, VIO = 500 V RIO 1011 PSO 700 mW Input safety current ISI 400 mA Input safety temperature TS 175 °C 7 mm Isolation resistance Output safety power Creepage distance DIP-4 Clearance distance DIP-4 7 mm Creepage distance DIP-4, 400 mil, option 6 8 mm Clearance distance DIP-4, 400 mil, option 6 8 mm Creepage distance SMD-4, option 7 7 mm Clearance distance SMD-4, option 7 7 mm Creepage distance SMD-4, 400 mil, option 8 8 mm Clearance distance SMD-4, 400 mil, option 8 8 mm 0.4 mm Insulation thickness DTI Note • As per DIN EN 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Rev. 2.5, 27-Aug-15 Document Number: 83430 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO617A www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 14 Tamb = 110 °C Tamb = 75 °C Tamb = 25 °C Tamb = 0 °C Tamb = - 55 °C 10 IC - Collector Current (mA) IF - Forward Current (mA) 100 1 0.1 IF = 10 mA 12 10 8 6 4 0.8 1.0 1.2 1.4 1.6 0 VF - Forward Voltage (V) IF = 2 mA IF = 35 mA 45 IF = 30 mA 40 35 IF = 25 mA 30 IF = 20 mA 25 20 IF = 15 mA 15 10 IF = 10 mA IF = 1 mA 5 IF = 5 mA 0 0 1 2 3 4 5 6 7 8 0.2 0.3 0.4 9 10 Fig. 8 - Collector Current vs. Collector Emitter Voltage NCTR - Normalized CTR (non-saturated) 55 50 0.1 VCE - Collector Emitter Voltage (V) Fig. 5 - Forward Voltage vs. Forward Current IC - Collector Current (mA) IF = 1 mA 2 0 0.6 1.2 IF = 5 mA, VCE = 5 V 1.0 0.8 0.6 0.4 0.2 0 Fig. 6 - Collector Current vs. Collector Emitter Voltage Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C -60 -40 -20 VCE - Collector Emitter Voltage (V) 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 9 - Normalized Current Transfer Ratio (non-sat.) vs. Ambient Temperature 1.2 IF = 0 mA 1000 VCE = 40 V 100 10 VCE = 24 V 1 0.1 VCE = 12 V 0.01 0.001 NCTR - Normalized CTR (sat) 10 000 ICE0 - Leakage Current (nA) IF = 5 mA IF = 5 mA, VCE = 0.4 V 1.0 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 7 - Leakage Current vs. Ambient Temperature Rev. 2.5, 27-Aug-15 Normalized to CTR value: IF = 5 mA, VCE = 5 V, Tamb = 25 °C -60 -40 -20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 10 - Normalized Current Transfer Ratio (sat.) vs. Ambient Temperature Document Number: 83430 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO617A Vishay Semiconductors 0.40 0 IF = 10 mA 0.35 0.30 0.25 Ic = 2 mA 0.15 0.10 Ic = 1 mA 0.05 RL = 100 Ω -40 Ic = 5 mA 0.20 VCE = 5 V -20 Phase Angle (deg) VCEsat - Collector Emitter Voltage (V) www.vishay.com RL = 1000 Ω -60 -80 -100 -120 -140 0.00 -160 -60 -40 -20 0 20 40 60 80 100 120 1 Tamb - Ambient Temperature (°C) 1000 1.2 Tamb = - 55 °C Tamb = 25 °C 1.0 0.8 0.6 Tamb = 75 °C 0.4 Tamb = 100 °C Normalized to: IF = 5 mA, VCE = 5 V, Tamb = 25 °C 0.2 0.1 1 10 FCTR - Cut-Off Frequency (kHz) NCTR - Normalized CTR (NS) Tamb = 0 °C 0 VCC = 5 V 100 10 1 0.1 100 1 10 100 IC - Collector Current (mA) IF - Forward Current (mA) Fig. 12 - Normalized CTR (non-sat.) vs. Forward Current Fig. 15 - Cut-Off Frequency vs. Collector Current 1000 VCE = 0.4 V Normalized to: IF = 5 mA, VCE = 5 V, Tamb = 25 °C Tamb = 0 °C Tamb = - 55 °C 0.6 0.4 Tamb = 25 °C 0.2 Tamb = 75 °C Tamb = 100 °C 0 0.1 1 10 VCE = 5 V, IF = 2 mA 100 toff (μs) 10 1 ton (μs) 0.1 100 IF - Forward Current (mA) Fig. 13 - Normalized CTR (sat.) vs. Forward Current Rev. 2.5, 27-Aug-15 ton, toff - Switching Time (μs) 1.2 NCTR - Normalized CTR (sat) 1000 Fig. 14 - Phase Angle vs. Frequency 1.4 0.8 100 f - Frequency (kHz) Fig. 11 - Collector Emitter Voltage vs. Ambient Temperature 1.0 10 0 5 10 15 20 RL - Load Resistance (kΩ) Fig. 16 - Switching Time vs. Load Resistance Document Number: 83430 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO617A www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS (in millimeters) 1.2 ± 0.1 4 3 6.5 ± 0.5 Pin 1 identifier 1 2 0.85 ± 0.1 7.62 ± 0.3 4.58 ± 0.3 0.85 ± 0.1 3.5 ± 0.3 1.2 ± 0.1 0.5 typ. 0.26 3.3 ± 0.5 2.8 ± 0.5 0.5 ± 0.1 2.54 ± 0.25 7.62 to 9.98 Option 6 Option 7 7.62 typ. 7.62 typ. 3.5 ± 0.3 0.35 Option 8 7.62 typ. + 0.25 - 0.3 3.5 ± 0.3 3.5 ± 0.3 0.25 ± 0.1 0.1 min. 0.6 min. 8 min. 2.7 min. 9.27 min. 12.1 max. 10.16 ± 0.3 0.76 10.16 typ. 1.78 2.54 R 0.25 1.52 8 min. 11.05 Fig. 17 - Package Drawings PACKAGE MARKING VO617A-3 V YWW 25 Fig. 18 - Example of VO617A-3X017T Notes • The VDE logo is only marked on option 1 parts. Option information is not marked on the part. • Tape and reel suffix (T) is not part of the package marking. Rev. 2.5, 27-Aug-15 Document Number: 83430 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO617A www.vishay.com Vishay Semiconductors PACKING INFORMATION DEVICE PER TUBE TYPE UNITS/TUBE TUBES/BOX UNITS/BOX DIP-4 100 40 4000 Regular, special, or bar code label Tape slot in core 13" 17999-1 Fig. 19 - Tape and Reel Shipping Medium Ø 1.55 ± 0.05 2 ± 0.1 4 ± 0.1 1.75 ± 0.1 7.5 ± 0.1 16 ± 0.3 12 ± 0.1 0.3 ± 0.05 Fig. 20 - Tape and Packing for Option 7 (1000 units per reel) Fig. 21 - Tape and Reel Packaging for Option 8 (2000 units per reel) Rev. 2.5, 27-Aug-15 Document Number: 83430 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO617A www.vishay.com Vishay Semiconductors SOLDER PROFILES HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 300 5s Lead temperature Temperature (°C) 250 235 °C to 260 °C first wave 200 wave ca. 200 K/s 150 100 °C to 130 °C 100 Conditions: Tamb < 30 °C, RH < 85 % Moisture sensitivity level 1, according to J-STD-020 ca. 2 K/s 2 K/s 50 full line: typical dotted line: process limits second wave Floor life: unlimited ca. 5 K/s forced cooling 0 0 50 100 94 8626 150 200 250 Time (s) Fig. 22 - Wave Soldering Double Wave Profile According to J-STD-020 for DIP-8 Devices 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 max. 30 s 150 max. 100 s max. 120 s 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s 0 0 19841 50 100 150 200 250 300 Time (s) Fig. 23 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 for SMD-8 Devices Rev. 2.5, 27-Aug-15 Document Number: 83430 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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