Datasheet

Alternative Device Available
K817P
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Vishay Semiconductors
Optocoupler, Phototransistor Output
C
FEATURES
E
• Endstackable to 2.54 mm (0.1") spacing
• DC isolation test voltage 5000 VRMS
1
A
17918_13
• Current transfer ratio (CTR) selected into
groups
• Low temperature coefficient of CTR
C
• Wide ambient temperature range
C
• Available in single, dual and quad channel packages
17203-5
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
In the K817P part each channel consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin (single) plastic dual inline package.
APPLICATIONS
AGENCY APPROVALS
• Modems
• BSI: EN 60065:2002, EN 60950-1:2006
• Answering machines
• DIN EN 60747-5-2 (VDE 0884)
• General applications
• Programmable logic controllers



• FIMKO
• UL file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
ORDERING INFORMATION
DIP
K
8
1
7
P
#
x
PART NUMBER
7.62 mm
CTR (%)
AGENCY CERTIFIED/
PACKAGE
VDE, BSI, FIMKO,
UL, cUL
PACKAGE
OPTION
5 mA
10 mA
5 mA
50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400
DIP-4
K817P
K817P1
K817P2
K817P3
K817P4
K817P5
K817P6
K817P7
K817P8
K817P9
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6
V
Forward current
IF
60
mA
Forward surge current
tp  10 μs
IFSM
1.5
A
Pdiss
70
mW
Tj
125
°C
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7
V
IC
50
mA
ICM
100
mA
Pdiss
70
mW
Tj
125
°C
Power dissipation
Junction temperature
OUTPUT
Collector current
Collector peak current
Power dissipation
Junction temperature
Rev. 2.1, 23-May-13
tp/T = 0.5, tp  10 ms
Document Number: 83522
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
t=1s
COUPLER
AC isolation test voltage (RMS)
VISO
5000
VRMS
Total power dissipation
Ptot
200
mW
Operating ambient temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Tsld
260
°C
Soldering temperature
2 mm from case, t  10 s
(1)
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to wave profile for soldering conditions for through hole devices.
Abs. Max. Output Power (mW)
Abs. Max. Input Current (mA)
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
Ambient Temperature (°C)
Fig. 1 - Absolute Maximum Output Power and Input Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
1.6
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
VR = 0 V, f = 1 MHz
Cj
50
Collector emitter voltage
IC = 100 μA
VCEO
70
V
Emitter collector voltage
IE = 100 μA
VECO
7
V
VCE = 20 V, IF = 0, E = 0
ICEO
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
Cut-off frequency
IF = 10 mA, VCE = 5 V,
RL = 100 
fc
110
kHz
f = 1 MHz
Ck
0.6
pF
Junction capacitance
V
pF
OUTPUT
Collector dark current
10
100
nA
0.3
V
COUPLER
Coupling capacitance
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Rev. 2.1, 23-May-13
Document Number: 83522
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
VCE = 5 V, IF = 5 mA
K817P
CTR
50
K817P1
CTR
K817P2
CTR
K817P3
VCE = 5 V, IF = 10 mA
IC/IF
VCE = 5 V, IF = 5 mA
TYP.
MAX.
UNIT
600
%
40
80
%
63
125
%
CTR
100
200
%
%
K817P4
CTR
160
320
K817P5
CTR
50
150
%
K817P6
CTR
100
300
%
K817P7
CTR
80
160
%
K817P8
CTR
130
260
%
K817P9
CTR
200
400
%
SAFETY AND INSULATION RATED PARAMETERS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Partial discharge test voltage -
routine test
100 %, ttest = 1 s
Vpd
1.6
kV
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
Vpd
1.36
kV
VIO = 500 V
RIO
1012

VIO = 500 V, Tamb = 100 °C
RIO
1011

VIO = 500 V, Tamb = 150 °C
(construction test only)
RIO
109

VIOTM
6000
Vpeak
Recurring peak voltage
VIORM
850
Vpeak
ISI
130
mA
Power dissipation
PSO
265
mW
Safety temperature
Tsi
150
°C
7.6
mm
Insulation resistance
Rated impulse voltage
Max. working voltages
Forward current
TYP.
Creepage distance
MAX.
UNIT
Note
• According to DIN EN 60747-5-5 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
VIOTM
300
t1, t2
t3 , t4
ttest
tstres
Phototransistor
PSO (mW)
250
200
= 1 s to 10 s
=1s
= 10 s
= 12 s
Vpd
150
VIOWM
VIORM
100
IR-diode
ISI (mA)
50
0
0
0
25
50
75
100
125
TSI - Safety Temperature (°C)
Fig. 2 - Derating Diagram
Rev. 2.1, 23-May-13
150
13930
t3 ttest t4
t1
tTr = 60 s
t2
t stres
t
Fig. 3 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
Document Number: 83522
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
Delay time
VS = 5 V, IC = 2 mA, RL = 100 
(see figure 1)
td
3
μs
Rise time
VS = 5 V, IC = 2 mA, RL = 100 
(see figure 1)
tr
3
μs
Fall time
VS = 5 V, IC = 2 mA, RL = 100 
(see figure 1)
tf
4.7
μs
Storage time
VS = 5 V, IC = 2 mA, RL = 100 
(see figure 1)
ts
0.3
μs
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 
(see figure 1)
ton
6
μs
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 
(see figure 1)
toff
5
μs
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 k (see
figure 2)
ton
3
μs
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 k (see
figure 2)
toff
10
μs
0
I C = 2 mA; adjusted through
input amplitude
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Oscilloscope
R L = 1 MΩ
C L = 20 pF
Channel II
50 Ω
100 Ω
0
MAX.
Fig. 1 - Test Circuit, Non-Saturated Operation
tp
IC
UNIT
t
100 %
90 %
10 %
0
tr
td
ts
t on
tp
td
tr
t on (= td + tr)
95 10804
IF
TYP.
IF
+5V
IF
IF
MIN.
Pulse duration
Delay time
Rise time
Turn-on time
tf
t off
ts
tf
t off (= ts + tf)
t
Storage time
Fall time
Turn-off time
96 11698
Fig. 3 - Switching Times
+5V
I F = 10 mA
0
IC
R G = 50 Ω
tp
= 0.01
T
t p = 50 µs
Channel I
Channel II
50 Ω
Oscilloscope
R L ≥ 1 MΩ
C L ≤ 20 pF
1 kΩ
95 10843
Fig. 2 - Test Circuit, Saturated Operation
Rev. 2.1, 23-May-13
Document Number: 83522
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
30
1.6
VF - Forward Voltage (V)
IC - Collector Current (mA)
Tamb = 0 °C
1.5
1.4
Tamb = - 55 °C
1.3
1.2
1.1
1.0
Tamb = 25 °C
Tamb = 50 °C
Tamb = 75 °C
0.9
0.8
Tamb = 110 °C
0.7
0.1
10
IF = 10 mA
10
IF = 5 mA
5
IF = 2 mA
IF = 1 mA
0
22329
0.1
0.2
0.3
0.4
VCE - Collector Emitter Voltage (sat) (V)
Fig. 7 - Collector Current vs. Collector Emitter Voltage (saturated)
25
1.2
20
NCTR - Normalized CTR (sat)
IC - Collector Current (mA)
15
100
Fig. 4 - Forward Voltage vs. Forward Current
IF = 30 mA
15
IF = 20 mA
10
IF = 15 mA
IF = 10 mA
5
IF = 5 mA
0
1.0
IF = 5 mA
0.8
IF = 10 mA
0.6
IF = 1 mA
0.4
VCE = 0.4 V
Normalized to:
IF = 10 mA, VCE = 5 V, Tamb = 25 °C
0.2
0
0
2
4
6
8
10
- 60 - 40 - 20 0
VCE - Collector Emitter Voltage (NS) (V)
Fig. 5 - Collector Current vs. Collector Emitter Voltage
(non-saturated)
1000
VCE = 40 V
10
VCE = 12 V
VCE = 24 V
0.1
22328
60
80 100 120
Fig. 8 - Normalized CTR (saturated) vs. Ambient Temperature
IF = 10 mA
1.0
0.8
IF = 5 mA
0.6
0.4
IF = 1 mA
0.2
Normalized to:
IF = 10 mA, VCE = 5 V, Tamb = 25 °C
0
20
40
60
80 100 120
Tamb - Ambient Temperature (°C)
Fig. 6 - Leakage Current vs. Ambient Temperature
Rev. 2.1, 23-May-13
40
1.2
IF = 0 mA
0.001
- 60 - 40 - 20 0
20
Tamb - Ambient Temperature (°C)
NCTR - Normalized CTR (NS)
22327
ICE0 - Leakage Current (nA)
IF = 25 mA
20
0
1
IF - Forward Current (mA)
22326
25
- 60 - 40 - 20 0
20 40 60 80 100 120
Tamb - Ambient Temperature (°C)
Fig. 9 - Normalized CTR (non-saturated) vs. Ambient Temperature
Document Number: 83522
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
20
Tamb = 25 °C
1.0
0.8
- 20
Tamb = - 55 °C
0.6
Tamb = 75 °C
0.4
Tamb = 110 °C
0
- 40
- 60
- 80
- 100
- 120
Normalized to:
IF = 10 mA, VCE = 5 V,
Tamb = 25 °C
0.2
- 140
- 160
0.1
1
10
1
100
Fig. 10 - Normalized CTR (non-saturated) vs. Forward Current
1.0
Tamb = 25 °C
Tamb = 0 °C
0.8
Tamb = - 55 °C
0.4
Tamb = 75 °C
Tamb = 110 °C
0
0.1
1
1000
1000
Normalized to:
IF = 10 mA,
VCE = 5 V,
Tamb = 25 °C
0.6
0.2
100
f (kHz)
Fig. 13 - FCTR vs. Phase Angle (kHz)
ton, toff - Switching Time (μs)
NCTR - Normalized CTR (sat)
VCE = 0.4 V
10
22335
IF - Forward Current (mA)
1.2
VCE = 5 V
0
Tamb = 0 °C
Phase (deg)
NCTR - Normalized CTR (NS)
1.2
VCE = 5 V, IF = 10 mA
100
toff (μs)
10
ton (μs)
1
0.1
10
0
100
22336
IF - Forward Current (mA)
Fig. 11 - Normalized CTR (saturated) vs. Forward Current
5
10
15
20
RL - Load Resistance (kΩ)
Fig. 14 - Switching Time vs. Load Resistance


1000
FCTR (kHz)
VCC = 5 V
100
10
1
0.1
1
10
100
IC (mA)
22334
Fig. 12 - FCTR vs. IC (saturated) (mA)
Rev. 2.1, 23-May-13
Document Number: 83522
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Alternative Device Available
K817P
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
6.5 ± 0.3
Pin 1 identifier
7.62 to 10.3
4.58 ± 0.3
7.62 typ.
0.4 ± 0.15
3.5 ± 0.3 4.5 ± 0.3
2.75 ± 0.15
0° to 15°
1.2 ± 0.1
0.25 typ.
0.5 ± 0.1
i178027-4
2.54 typ.
PACKAGE MARKING
K817P3
V YWW 24
Rev. 2.1, 23-May-13
Document Number: 83522
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000