Alternative Device Available K817P www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output C FEATURES E • Endstackable to 2.54 mm (0.1") spacing • DC isolation test voltage 5000 VRMS 1 A 17918_13 • Current transfer ratio (CTR) selected into groups • Low temperature coefficient of CTR C • Wide ambient temperature range C • Available in single, dual and quad channel packages 17203-5 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION In the K817P part each channel consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4 pin (single) plastic dual inline package. APPLICATIONS AGENCY APPROVALS • Modems • BSI: EN 60065:2002, EN 60950-1:2006 • Answering machines • DIN EN 60747-5-2 (VDE 0884) • General applications • Programmable logic controllers • FIMKO • UL file no. E52744 • cUL tested to CSA 22.2 bulletin 5A ORDERING INFORMATION DIP K 8 1 7 P # x PART NUMBER 7.62 mm CTR (%) AGENCY CERTIFIED/ PACKAGE VDE, BSI, FIMKO, UL, cUL PACKAGE OPTION 5 mA 10 mA 5 mA 50 to 600 40 to 80 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400 DIP-4 K817P K817P1 K817P2 K817P3 K817P4 K817P5 K817P6 K817P7 K817P8 K817P9 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Forward surge current tp 10 μs IFSM 1.5 A Pdiss 70 mW Tj 125 °C Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 7 V IC 50 mA ICM 100 mA Pdiss 70 mW Tj 125 °C Power dissipation Junction temperature OUTPUT Collector current Collector peak current Power dissipation Junction temperature Rev. 2.1, 23-May-13 tp/T = 0.5, tp 10 ms Document Number: 83522 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Alternative Device Available K817P www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT t=1s COUPLER AC isolation test voltage (RMS) VISO 5000 VRMS Total power dissipation Ptot 200 mW Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C Soldering temperature 2 mm from case, t 10 s (1) Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to wave profile for soldering conditions for through hole devices. Abs. Max. Output Power (mW) Abs. Max. Input Current (mA) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Ambient Temperature (°C) Fig. 1 - Absolute Maximum Output Power and Input Current vs. Ambient Temperature ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.6 UNIT INPUT Forward voltage IF = 50 mA VF 1.25 VR = 0 V, f = 1 MHz Cj 50 Collector emitter voltage IC = 100 μA VCEO 70 V Emitter collector voltage IE = 100 μA VECO 7 V VCE = 20 V, IF = 0, E = 0 ICEO Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency IF = 10 mA, VCE = 5 V, RL = 100 fc 110 kHz f = 1 MHz Ck 0.6 pF Junction capacitance V pF OUTPUT Collector dark current 10 100 nA 0.3 V COUPLER Coupling capacitance Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 2.1, 23-May-13 Document Number: 83522 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Alternative Device Available K817P www.vishay.com Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. VCE = 5 V, IF = 5 mA K817P CTR 50 K817P1 CTR K817P2 CTR K817P3 VCE = 5 V, IF = 10 mA IC/IF VCE = 5 V, IF = 5 mA TYP. MAX. UNIT 600 % 40 80 % 63 125 % CTR 100 200 % % K817P4 CTR 160 320 K817P5 CTR 50 150 % K817P6 CTR 100 300 % K817P7 CTR 80 160 % K817P8 CTR 130 260 % K817P9 CTR 200 400 % SAFETY AND INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. Partial discharge test voltage - routine test 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage - lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) Vpd 1.36 kV VIO = 500 V RIO 1012 VIO = 500 V, Tamb = 100 °C RIO 1011 VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 VIOTM 6000 Vpeak Recurring peak voltage VIORM 850 Vpeak ISI 130 mA Power dissipation PSO 265 mW Safety temperature Tsi 150 °C 7.6 mm Insulation resistance Rated impulse voltage Max. working voltages Forward current TYP. Creepage distance MAX. UNIT Note • According to DIN EN 60747-5-5 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. VIOTM 300 t1, t2 t3 , t4 ttest tstres Phototransistor PSO (mW) 250 200 = 1 s to 10 s =1s = 10 s = 12 s Vpd 150 VIOWM VIORM 100 IR-diode ISI (mA) 50 0 0 0 25 50 75 100 125 TSI - Safety Temperature (°C) Fig. 2 - Derating Diagram Rev. 2.1, 23-May-13 150 13930 t3 ttest t4 t1 tTr = 60 s t2 t stres t Fig. 3 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5 Document Number: 83522 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Alternative Device Available K817P www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Delay time VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) td 3 μs Rise time VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) tr 3 μs Fall time VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) tf 4.7 μs Storage time VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) ts 0.3 μs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) ton 6 μs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 (see figure 1) toff 5 μs Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k (see figure 2) ton 3 μs Turn-off time VS = 5 V, IF = 10 mA, RL = 1 k (see figure 2) toff 10 μs 0 I C = 2 mA; adjusted through input amplitude R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Oscilloscope R L = 1 MΩ C L = 20 pF Channel II 50 Ω 100 Ω 0 MAX. Fig. 1 - Test Circuit, Non-Saturated Operation tp IC UNIT t 100 % 90 % 10 % 0 tr td ts t on tp td tr t on (= td + tr) 95 10804 IF TYP. IF +5V IF IF MIN. Pulse duration Delay time Rise time Turn-on time tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 3 - Switching Times +5V I F = 10 mA 0 IC R G = 50 Ω tp = 0.01 T t p = 50 µs Channel I Channel II 50 Ω Oscilloscope R L ≥ 1 MΩ C L ≤ 20 pF 1 kΩ 95 10843 Fig. 2 - Test Circuit, Saturated Operation Rev. 2.1, 23-May-13 Document Number: 83522 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Alternative Device Available K817P www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 30 1.6 VF - Forward Voltage (V) IC - Collector Current (mA) Tamb = 0 °C 1.5 1.4 Tamb = - 55 °C 1.3 1.2 1.1 1.0 Tamb = 25 °C Tamb = 50 °C Tamb = 75 °C 0.9 0.8 Tamb = 110 °C 0.7 0.1 10 IF = 10 mA 10 IF = 5 mA 5 IF = 2 mA IF = 1 mA 0 22329 0.1 0.2 0.3 0.4 VCE - Collector Emitter Voltage (sat) (V) Fig. 7 - Collector Current vs. Collector Emitter Voltage (saturated) 25 1.2 20 NCTR - Normalized CTR (sat) IC - Collector Current (mA) 15 100 Fig. 4 - Forward Voltage vs. Forward Current IF = 30 mA 15 IF = 20 mA 10 IF = 15 mA IF = 10 mA 5 IF = 5 mA 0 1.0 IF = 5 mA 0.8 IF = 10 mA 0.6 IF = 1 mA 0.4 VCE = 0.4 V Normalized to: IF = 10 mA, VCE = 5 V, Tamb = 25 °C 0.2 0 0 2 4 6 8 10 - 60 - 40 - 20 0 VCE - Collector Emitter Voltage (NS) (V) Fig. 5 - Collector Current vs. Collector Emitter Voltage (non-saturated) 1000 VCE = 40 V 10 VCE = 12 V VCE = 24 V 0.1 22328 60 80 100 120 Fig. 8 - Normalized CTR (saturated) vs. Ambient Temperature IF = 10 mA 1.0 0.8 IF = 5 mA 0.6 0.4 IF = 1 mA 0.2 Normalized to: IF = 10 mA, VCE = 5 V, Tamb = 25 °C 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 6 - Leakage Current vs. Ambient Temperature Rev. 2.1, 23-May-13 40 1.2 IF = 0 mA 0.001 - 60 - 40 - 20 0 20 Tamb - Ambient Temperature (°C) NCTR - Normalized CTR (NS) 22327 ICE0 - Leakage Current (nA) IF = 25 mA 20 0 1 IF - Forward Current (mA) 22326 25 - 60 - 40 - 20 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Fig. 9 - Normalized CTR (non-saturated) vs. Ambient Temperature Document Number: 83522 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Alternative Device Available K817P www.vishay.com Vishay Semiconductors 20 Tamb = 25 °C 1.0 0.8 - 20 Tamb = - 55 °C 0.6 Tamb = 75 °C 0.4 Tamb = 110 °C 0 - 40 - 60 - 80 - 100 - 120 Normalized to: IF = 10 mA, VCE = 5 V, Tamb = 25 °C 0.2 - 140 - 160 0.1 1 10 1 100 Fig. 10 - Normalized CTR (non-saturated) vs. Forward Current 1.0 Tamb = 25 °C Tamb = 0 °C 0.8 Tamb = - 55 °C 0.4 Tamb = 75 °C Tamb = 110 °C 0 0.1 1 1000 1000 Normalized to: IF = 10 mA, VCE = 5 V, Tamb = 25 °C 0.6 0.2 100 f (kHz) Fig. 13 - FCTR vs. Phase Angle (kHz) ton, toff - Switching Time (μs) NCTR - Normalized CTR (sat) VCE = 0.4 V 10 22335 IF - Forward Current (mA) 1.2 VCE = 5 V 0 Tamb = 0 °C Phase (deg) NCTR - Normalized CTR (NS) 1.2 VCE = 5 V, IF = 10 mA 100 toff (μs) 10 ton (μs) 1 0.1 10 0 100 22336 IF - Forward Current (mA) Fig. 11 - Normalized CTR (saturated) vs. Forward Current 5 10 15 20 RL - Load Resistance (kΩ) Fig. 14 - Switching Time vs. Load Resistance 1000 FCTR (kHz) VCC = 5 V 100 10 1 0.1 1 10 100 IC (mA) 22334 Fig. 12 - FCTR vs. IC (saturated) (mA) Rev. 2.1, 23-May-13 Document Number: 83522 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Alternative Device Available K817P www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 6.5 ± 0.3 Pin 1 identifier 7.62 to 10.3 4.58 ± 0.3 7.62 typ. 0.4 ± 0.15 3.5 ± 0.3 4.5 ± 0.3 2.75 ± 0.15 0° to 15° 1.2 ± 0.1 0.25 typ. 0.5 ± 0.1 i178027-4 2.54 typ. PACKAGE MARKING K817P3 V YWW 24 Rev. 2.1, 23-May-13 Document Number: 83522 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000