AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features Q1 The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications). Q2 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 25mΩ VDS(V) = 30V ID=7A (VGS = 10V) <26mΩ (VGS = 10V) <31mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A UIS TESTED! Rg,Ciss,Coss,Crss Tested D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 K G2 D1/S2/K D1/S2/K D1/S2/K TA=25°C TA=70°C B TA=25°C B V ID 7 6.4 A IDM 40 30 2 2 1.28 1.28 17 15 A 43 -55 to 150 34 -55 to 150 mJ °C Parameter Reverse Voltage Symbol VDS TA=25°C Pulsed Diode Forward Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Units V ±12 EAR TJ, TSTG TA=70°C Max Q2 30 8.5 6.8 Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range Continuous Forward AF Current Max Q1 30 ±20 IAR B S2 VGS PD TA=70°C Avalanche Current G2 S1 Gate-Source Voltage Power Dissipation A G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Pulsed Drain Current Q2 Q1 SOIC-8 Continuous Drain AF Current D2 Maximum Schottky 30 W Units V 3 IF 2.2 IFM 20 PD TJ, TSTG 2 1.28 -55 to 150 A W °C www.aosmd.com AO4912 Parameter: Thermal Characteristics MOSFET Q1 t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol Parameter: Thermal Characteristics MOSFET Q2 t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol Thermal Characteristics Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State RθJA RθJL RθJA RθJL RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units Typ 48 74 35 Max 62.5 110 40 Units 47.5 71 32 62.5 110 40 °C/W °C/W °C/W A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating. Rev 6: Jan 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4912 Q2 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 30 IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 25 TJ=55°C 5 VGS=10V, ID=7.0A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=6.0A gFS Forward Transconductance VDS=5V, ID=7A VSD Diode Forward Voltage IS=1A IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Rg Gate resistance 1.5 SWITCHING PARAMETERS Total Gate Charge Qg VGS=4.5V, VDS=15V, ID=7.0A 2 V 20 26 31.6 38 24.3 31 mΩ 1 V 3 A 710 pF 162 0.2 mΩ S 590 VGS=0V, VDS=0V, f=1MHz nA A 0.78 VGS=0V, VDS=15V, f=1MHz µA 100 22 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance V 1 Zero Gate Voltage Drain Current Coss Max Units VDS=30V, VGS=0V IDSS RDS(ON) Typ pF 40 56 pF 0.45 0.6 Ω 6.04 7.3 nC Qgs Gate Source Charge Qgd Gate Drain Charge 2.56 tD(on) Turn-On DelayTime 3.7 5.5 ns tr Turn-On Rise Time 3.5 5.5 ns tD(off) Turn-Off DelayTime 14.9 22 ns tf Turn-Off Fall Time 2.5 4 ns trr Body Diode Reverse Recovery time IF=7A, dI/dt=100A/µs 21.2 26 ns Qrr Body Diode Reverse Recovery charge IF=7A, dI/dt=100A/µs 14.2 21 nC VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 1.46 nC nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating. Rev 6: Jan 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4912 Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 3.5V 25 3V ID(A) 20 ID (A) VDS=5V 16 4.5V 15 12 8 10 VGS=2.5V 125°C 4 5 0 0 0 1 2 3 4 0 5 0.5 1.5 2 2.5 3 3.5 1.8 30 Normalized On-Resistance 28 RDS(ON) (mΩ ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 26 24 22 VGS=10V 20 18 16 0 5 10 15 20 ID=7A 1.6 VGS=10V VGS=4.5V 1.4 1.2 1 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 1.0E+01 70 60 1.0E+00 ID=7A 125°C 1.0E-01 50 IS (A) RDS(ON) (mΩ ) 25°C 40 125°C 1.0E-02 1.0E-03 30 25°C 1.0E-04 20 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4912 Q2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 750 5 VDS=15V ID=7A Ciss 600 Capacitance (pF) VGS (Volts) 4 3 2 1 f=1MHz VGS=0V 450 300 Coss 150 Crss 0 0 1 2 3 4 5 0 6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 100µs 1ms 10.0 ID (A) 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 30 10µs Power (W) RDS(ON) limited TJ(Max)=150°C, T A=25°C 20 10 1s 10s 0 0.001 DC 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4912 Q1 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current. by Schottky leakage) Min ID=250µA, VGS=0V (Set Typ 30 VR=30V V 0.007 0.05 VR=30V, TJ=125°C 3.2 10 mA VR=30V, TJ=150°C 12 20 100 nA 1.8 3 V 13.8 17 20 24 25 mΩ 0.5 V 3.5 A 1165 pF IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 VGS=10V, ID=8.5A A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=7A 19.7 gFS Forward Transconductance VDS=5V, ID=8.5A 23 VSD Diode+Schottky Forward Voltage IS=1A IS Maximum Body-Diode+Schottky Continuous Current TJ=125°C Output Capacitance (FET + Schottky) Crss Reverse Transfer Capacitance Rg Gate resistance 971 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 0.35 mΩ S 0.45 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Max Units pF 110 154 pF 0.7 0.85 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 19.2 23 nC Qg Total Gate Charge 9.36 11.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.2 tD(on) Turn-On DelayTime 5.2 7.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=8.5A 2.6 nC nC ns VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 4.4 6.5 ns 17.3 25 ns ns tf Turn-Off Fall Time 3.3 5 trr Body Diode + Schottky Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 19.3 23 ns Qrr Body Diode + Schottky Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 9.4 11 nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating. Rev 6: Jan 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4912 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 25 3.5V 4.5V 15 10 5 5 0 0 1 2 3 125°C 15 10 VGS=3V 0 VDS=5V 20 ID(A) 20 ID (A) 30 4V 10V 4 25°C 1 5 1.5 RDS(ON) (mΩ ) 3 3.5 4 180 110 0.7 1.7 Normalized On-Resistance 26 VGS=4.5V 22 2.5 VGS (Volts) Figure 2: Transfer 1040Characteristics VDS (Volts) Fig 1: On-Region Characteristics 18 1.6 ID=8.5A 1.5 VGS=10V VGS=4.5V 1.4 RGEN=3Ω VGS=10V, VDS=15V, RL=1.8Ω, 1.3 VGS=10V 14 10 0 5 10 15 20 25 30 1.2 1.1 1 0.9 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 60 1.0E+01 50 125°C 1.0E+00 ID=8.5A 1.0E-01 40 IS (A) RDS(ON) (mΩ ) 2 30 25°C 1.0E-02 1.0E-03 FET+SCHOTTKY 125°C 20 1.0E-04 1.0E-05 25°C 10 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note F) www.aosmd.com AO4912 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.5A Capacitance (pF) VGS (Volts) 8 1250 6 4 2 f=1MHz VGS=0V Ciss 1000 750 Coss FET+SCHOTTKY 500 Crss 250 0 0 4 8 12 16 0 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10µs 10ms ID (A) 20 25 30 TJ(Max)=150°C TA=25°C 30 100µs 1ms 15 1040 180 110 0.7 40 Power (W) 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C, T A=25°C RDS(ON) limited 5 0.1s 20 VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 1.0 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com