AO4918 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features Q1 The AO4918 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4918 is Pb-free (meets ROHS & Sony 259 specifications). AO4918L is a Green Product ordering option. AO4918 and AO4918L are electrically identical. VDS (V) = 30V VDS(V) = 30V ID = 9.3A (VGS = 10V) ID=8.3A (VGS = 10V RDS(ON) < 14.5mΩ <18mΩ (VGS = 10V) <27mΩ (VGS = 4.5V) RDS(ON) < 16mΩ Q2 SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K B TA=70°C Power Dissipation Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward A Current B TA=25°C Power Dissipation TJ, TSTG TA=25°C Pulsed Diode Forward Current A PD Symbol VDS TA=70°C TA=70°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. A G1 IDM TA=25°C Q2 Q1 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C A Current ID TA=70°C Pulsed Drain Current D2 G2 S1 S2 Max Q1 30 Max Q2 30 Units V ±12 ±20 V 9.3 7.4 8.3 6.7 A 40 40 2 2 1.28 -55 to 150 1.28 -55 to 150 Maximum Schottky 30 W °C Units V 3 IF 2.2 IFM 20 PD TJ, TSTG 2 1.28 -55 to 150 A W °C AO4918 Parameter: Thermal Characteristics MOSFET Q1 A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol Parameter: Thermal Characteristics MOSFET Q2 A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A C Steady-State Maximum Junction-to-Lead Symbol Thermal Characteristics Schottky A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State RθJA RθJL RθJA RθJL RθJA RθJL Typ 53 81.9 30.5 Max 62.5 110 40 Units Typ 53 81.9 30.5 Max 62.5 110 40 Units 50.4 86 26.6 62.5 110 40 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev4: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. °C/W °C/W °C/W AO4918 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter IDSS Min Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=9.3A TJ=125°C VGS=4.5V, ID=8.8A Forward Transconductance VSD Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current IS VDS=5V, ID=9.3A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance (FET + Schottky) Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=9.3A Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time 30 3.2 10 mA 12 20 100 nA 1.1 2 VGS=10V, VDS=15V, RL=1.6Ω, RGEN=3Ω V A 11.7 14.5 15.4 19 13.1 16 37 0.46 mΩ mΩ S 0.5 V 3.5 A 3740 4488 pF 295 pF 186 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd V 0.007 0.05 VR=30V, TJ=150°C gFS Max Units 30 VR=30V VR=30V, TJ=125°C Zero Gate Voltage Drain Current. (Set by Schottky leakage) Typ pF 0.86 1.1 Ω 30.5 37 nC 4.5 nC 8.5 nC 6 9 ns 8.2 12 ns 54.5 75 ns 10.5 15 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode + Schottky Reverse Recovery Time IF=9.3A, dI/dt=100A/µs 23.5 28 ns Qrr Body Diode + Schottky Reverse Recovery Charge IF=9.3A, dI/dt=100A/µs 13.3 16 nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately Rev4: August 2005. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4918 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 10V 25 4.5V 30 20 ID(A) 2.5V ID (A) VDS=5V 20 VGS=2V 15 125°C 10 10 5 25°C 0 0 0 1 2 3 4 0.5 5 1 14 Normalized On-Resistance RDS(ON) (mΩ) 2 2.5 1.8 13 VGS=4.5V 12 VGS=10V 11 10 0 5 10 15 20 25 ID=9.3A 1.6 VGS=4.5V 1.4 VGS=10V 1.2 1 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 1.0E+01 30 125°C 1.0E+00 ID=9.3A 25 1.0E-01 20 IS (A) RDS(ON) (mΩ) 1.5 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 15 1.0E-02 25°C 1.0E-03 25°C 10 FET+SCHOTTKY 1.0E-04 1.0E-05 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note F) Alpha Omega Semiconductor, Ltd. 1.0 AO4918 Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 5 VDS=15V ID=9.3A Capacitance (pF) VGS (Volts) 4 f=1MHz VGS=0V Ciss 3 2 1000 Coss FET+SCHOTTKY 1 Crss 0 0 5 10 15 20 25 30 100 35 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 40 RDS(ON) limited TJ(Max)=150°C, TA=25°C 100µs 30 10µs Power (W) 1ms 10.0 ID (A) 10ms 0.1s 1.0 TJ(Max)=150°C TA=25°C 1s 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha Omega Semiconductor, Ltd. 100 1000 AO4918 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 30 VDS=24V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance TJ=55°C VGS=10V, ID=8.3A TJ=125°C VGS=4.5V, ID=7A gFS Forward Transconductance VSD Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current VDS=5V, ID=8.3A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg Total Gate Charge VGS=0V, VDS=15V, f=1MHz Max Units V 0.004 IDSS IS Typ 1 5 1.8 100 nA 3 V A 14.9 18 22 27 21.6 27 mΩ 0.5 V 3 A 23 0.45 VGS=10V, VDS=15V, ID=8.3A mΩ S 1040 1250 pF 180 pF 110 VGS=0V, VDS=0V, f=1MHz µA 0.7 pF 0.85 Ω 19.2 24 nC 9.36 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.2 tD(on) Turn-On DelayTime 5.2 7.5 ns tr Turn-On Rise Time 4.4 6.5 ns tD(off) Turn-Off DelayTime 17.3 25 ns tf Turn-Off Fall Time 3.3 5 ns trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 16.7 21 ns Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 6.7 10 nC VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 2.6 nC nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev4: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4918 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) 30 10V 25 25 3.5V 4.5V 15 10 VDS=5V 20 ID(A) 20 ID (A) 30 4V 125°C 15 10 VGS=3V 25°C 5 5 0 0 0 1 2 3 4 1 5 1.5 26 Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ) 22 18 VGS=10V 14 10 5 10 15 20 3 3.5 4 180 110 0.7 1.7 0 2.5 VGS (Volts) 1040 Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 25 1.6 ID=8.3A 1.5 VGS=10V VGS=4.5V 1.4 1.3 1.2 1.1 1 0.9 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature (°C) Figure 4: On resistance vs. Junction Temperature 1.0E+01 60 1.0E+00 ID=8.3A 50 125°C 1.0E-01 40 IS (A) RDS(ON) (mΩ) 2 30 1.0E-02 25°C 1.0E-03 125°C 20 1.0E-04 25°C 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4918 Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) 1500 10 VDS=15V ID=8.5A Capacitance (pF) VGS (Volts) 8 1250 6 4 Ciss 1000 2 750 500 Coss Crss 250 0 0 4 8 12 16 0 20 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 100µs 1ms 10µs ID (A) 15 180 110 0.7 30 10ms 0.1s 1.0 10 40 TJ(Max)=150°C, TA=25°C RDS(ON) limited 5 20 25 30 VDS (Volts) Figure 8: Capacitance 1040 Characteristics Power (W) 10.0 f=1MHz VGS=0V 1s TJ(Max)=150°C TA=25°C 20 10 10s DC 0 0.001 0.1 0.1 1 10 100 VDS (Volts) ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000