Datasheet

AON6266
60V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power AlphaMOS (αMOS MV) technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
60V
30A
RDS(ON) (at VGS=10V)
< 15mΩ
RDS(ON) (at VGS=4.5V)
< 19mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
DFN5X6
D
Top View
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON6266
DFN 5x6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
C
C
Avalanche energy
L=0.1mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: April 2014
IAS
20
A
EAS
20
mJ
VSPIKE
72
V
38
Steady-State
Steady-State
W
15
5.0
W
3.2
TJ, TSTG
Symbol
t ≤ 10s
A
10
PDSM
TA=70°C
A
13
PD
TC=100°C
V
90
IDSM
TA=70°C
±20
22.5
IDM
TA=25°C
Continuous Drain
Current
Units
V
30
ID
TC=100°C
Pulsed Drain Current
Avalanche Current
VGS
TC=25°C
Continuous Drain
Current G
Maximum
60
RθJA
RθJC
-55 to 150
Typ
20
45
2.7
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°C
Max
25
55
3.3
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
1.5
±100
nA
2.0
2.5
V
12
15
20.5
25
19
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=18A
15
gFS
Forward Transconductance
VDS=5V, ID=20A
100
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.72
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=20A
Coss
Units
60
VDS=60V, VGS=0V
IDSS
Max
mΩ
mΩ
S
1
V
30
A
1340
VGS=0V, VDS=30V, f=1MHz
f=1MHz
0.7
pF
123
pF
10
pF
1.5
2.3
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
21
30
nC
Qg(4.5V)
Total Gate Charge
9
15
nC
Qgs
Gate Source Charge
4.7
nC
Qgd
Gate Drain Charge
2.6
nC
tD(on)
Turn-On DelayTime
6
ns
VGS=10V, VDS=30V, ID=20A
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, dI/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
60
Body Diode Reverse Recovery Time
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
2.5
ns
22
ns
2.5
ns
17
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: April 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
10V
80
4.5V
VDS=5V
4V
6V
60
ID(A)
ID (A)
60
3.5V
40
40
125°C
20
20
VGS=3V
25°C
0
0
0
1
2
3
4
1
5
2
2
18
1.8
Normalized On-Resistance
RDS(ON) (mΩ)
20
VGS=4.5V
14
12
VGS=10V
10
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
16
3
VGS=10V
ID=20A
1.6
1.4
1.2
VGS=4.5V
ID=18A
1
0.8
8
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
40
1.0E+01
ID=20A
1.0E+00
125°C
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ)
30
20
1.0E-02
25°C
1.0E-03
10
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: April 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1800
VDS=30V
ID=20A
1600
Ciss
1400
Capacitance (pF)
VGS (Volts)
8
6
4
1200
1000
800
600
400
2
Coss
200
0
Crss
0
0
5
10
15
20
25
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
60
10µs
10µs
RDS(ON)
limited
10.0
TJ(Max)=150°C
TC=25°C
400
Power (W)
ID (Amps)
40
500
100.0
100µs
1ms
10ms
1.0
0.0
0.01
0.1
300
200
DC
TJ(Max)=150°C
TC=25°C
0.1
100
1
10
VDS (Volts)
100
1000
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
10
20
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.3°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: April 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
35
40
Current rating ID(A)
Power Dissipation (W)
30
30
20
10
25
20
15
10
5
0
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=55°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: April 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: April 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6