AON7556

AON7556
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
30V
12A
ID (at VGS=10V)
Applications
RDS(ON) (at VGS=10V)
< 10.5mΩ
RDS(ON) (at VGS=4.5V)
< 16.5mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
DFN 3x3 EP
Bottom View
Top View
D
Top View
Pin 1
1
8
2
7
3
6
4
5
G
Pin 1
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON7556
DFN 3x3 EP
Tape & Reel
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current G
Avalanche Current C
Avalanche energy
L=0.05mH
VDS Spike
C
10µs
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.1.0: February 2014
18
A
EAS
8
mJ
36
V
12.5
Steady-State
Steady-State
W
5
4.1
RθJA
RθJC
W
2.6
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
12
PD
TC=100°C
A
10.5
VSPIKE
TC=25°C
V
48
IDSM
TA=70°C
±20
9.4
IDM
TA=25°C
Units
V
12
ID
TC=100°C
C
Maximum
30
-55 to 150
Typ
24
47
8
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°C
Max
30
60
10
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
1.4
±100
nA
1.8
2.2
V
8.5
10.5
12
14.8
16.5
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=10A
13
gFS
Forward Transconductance
VDS=5V, ID=12A
40
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
0.73
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=12A
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
VGS=0V, VDS=15V, f=1MHz
mΩ
mΩ
S
1
V
10
A
600
pF
230
pF
30
pF
1.5
2.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9
15
nC
Qg(4.5V) Total Gate Charge
4.4
10
nC
Qgs
Gate Source Charge
Qgd
f=1MHz
VGS=10V, VDS=15V, ID=12A
0.7
1.4
nC
Gate Drain Charge
1.9
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=12A, dI/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs
10.5
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=1.25Ω,
RGEN=3Ω
2.5
ns
17.5
ns
2.5
ns
8.6
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
VDS=5V
4.5V
40
40
3.5V
10V
30
ID(A)
ID (A)
30
20
125°C
20
3V
25°C
10
10
VGS=2.5V
0
0
0
1
2
3
4
0
5
1
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
20
Normalized On-Resistance
1.6
16
VGS=4.5V
RDS(ON) (mΩ
Ω)
2
12
8
VGS=10V
4
VGS=10V
ID=12A
1.4
1.2
VGS=4.5V
ID=10A
1
0.8
0
0
4
8
12
16
0
20
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
30
1.0E+02
ID=12A
1.0E+01
1.0E+00
20
IS (A)
RDS(ON) (mΩ
Ω)
25
125°C
15
125°C
1.0E-01
1.0E-02
25°C
10
1.0E-03
25°C
5
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: February 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=15V
ID=12A
700
Ciss
8
Capacitance (pF)
VGS (Volts)
600
6
4
500
400
Coss
300
200
2
Crss
100
0
0
0
2
4
6
8
10
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
500
TJ(Max)=150°C
TC=25°C
10µs
RDS(ON)
limited
400
100µs
DC
1ms
10ms
Power (W)
ID (Amps)
10µs
1.0
0.1
30
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
25
TJ(Max)=150°C
TC=25°C
0.0
0.01
300
200
100
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
0.001
100
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=10°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: February 2014
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Page 4 of 6
16
16
12
12
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
8
4
0
8
4
0
0
25
50
75
100
125
150
0
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Zθ JA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PD
Single Pulse
Ton
0.001
1E-05
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: February 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: February 2014
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6