Datasheet

AOI2614
60V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
60V
35A
ID (at VGS=10V)
Applications
RDS(ON) (at VGS=10V)
< 16mΩ
RDS(ON) (at VGS=4.5V)
< 20mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
Top View
TO-251A
IPAK
D
Bottom View
D
G
Orderable Part Number
D
G
S
S
D
G
Package Type
AOI2614
S
Form
TO-251A
Minimum Order Quantity
Tube
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Continuous Drain
Current
Avalanche Current C
Avalanche energy
VDS Spike
Power Dissipation B
Power Dissipation A
TA=25°C
L=0.1mH
10μs
TC=25°C
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: February 2015
13
20
A
EAS
20
mJ
VSPIKE
72
V
60
Steady-State
Steady-State
W
30
6.2
RθJA
RθJC
W
4.0
-55 to 175
TJ, TSTG
Symbol
t ≤ 10s
A
IAS
PDSM
TA=70°C
A
10.5
PD
TC=100°C
V
90
IDSM
C
±20
30
IDM
TA=70°C
Units
V
35
ID
TC=100°C
Maximum
60
Typ
15
40
2.0
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°C
Max
20
50
2.5
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
VDS=60V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
±100
nA
2.5
V
13
16
22
27
VGS=4.5V, ID=18A
15.5
20
VDS=5V, ID=20A
100
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current G
1.5
TJ=125°C
0.72
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V)
Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
μA
5
2.0
Static Drain-Source On-Resistance
Crss
Units
V
1
TJ=55°C
RDS(ON)
Coss
Max
60
VGS=10V, ID=20A
IS
Typ
f=1MHz
VGS=10V, VDS=30V, ID=20A
VGS=10V, VDS=30V, RL=1.5Ω,
RGEN=3Ω
0.7
mΩ
S
1
V
35
A
1340
VGS=0V, VDS=30V, f=1MHz
mΩ
pF
123
pF
10
pF
1.5
2.3
Ω
21
30
nC
9
15
nC
4.7
nC
2.6
nC
6
ns
2.5
ns
22
ns
tf
Turn-Off Fall Time
2.5
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
17
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
60
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2015
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Page 1 of 1
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10V
VDS=5V
4V
6V
60
ID (A)
80
4.5V
60
ID(A)
80
3.5V
40
40
125°C
20
25°C
20
VGS=3V
0
0
0
1
2
3
4
0
5
1
20
3
4
5
6
2.4
Normalized On-Resistance
18
RDS(ON) (mΩ)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
VGS=4.5V
16
14
12
VGS=10V
10
2.2
2
VGS=10V
ID=20A
1.8
1.6
1.4
VGS=4.5V
ID=18A
1.2
1
0.8
8
0
5
10
15
20
25
0
30
40
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
ID=20A
1.0E+01
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ)
30
20
125°C
1.0E-01
25°C
1.0E-02
10
1.0E-03
25°C
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: February 2015
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2000
VDS=30V
ID=20A
8
Capacitance (pF)
6
VGS (Volts)
Ciss
1500
4
2
1000
500
Coss
Crss
0
0
0
5
10
15
20
25
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
30
500
RDS(ON)
limited
10.0
10µs
10µs
400
100µs
300
Power (W)
ID (Amps)
100.0
1ms
1.0
DC
10ms
TJ(Max)=175°C
TC=25°C
0.1
50
60
TJ(Max)=175°C
TC=25°C
200
100
0
0.0
0.01
10
ZθJC Normalized Transient
Thermal Resistance
40
VDS (Volts)
Figure 8: Capacitance Characteristics
0.0001 0.001
0.1
1
10
100
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.5°C/W
1
0.1
PDM
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: February 2015
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Page 1 of 1
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
60
Current rating ID(A)
Power Dissipation (W)
80
40
20
30
20
10
0
0
0
25
50
75
100
125
150
0
175
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
PDM
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: February 2015
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Page 1 of 1
Gate Charge Test Circuit & Waveform
Vgs
+
VDC
-
Qg
10V
+ Vds
-
Qgs
VDC
DUT
Qgd
Vgs
Ig
RL
Vds
Vds
90%
+ Vdd
-
DUT
Vgs
Rg
Charge
Resistive Switching Test Circuit & Waveforms
VDC
Vgs
10%
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
Vds
Id
Rg
BVDSS
+ Vdd
-
Vgs
Vgs
VDC
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Vds +
Vds -
Qrr = - Idt
DUT
Isd
Vgs
Ig
Rev.1.0: February 2015
Vgs
L
Isd
+ Vdd
-
VDC
Vds
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IF
t rr
dI/dt
I RM
Vdd
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