AOW284

AOW284
80V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power AlphaMOS (αMOS MV) technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
80V
105A
RDS(ON) (at VGS=10V)
< 4.3mΩ
RDS(ON) (at VGS=6V)
< 5.5mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
TO-262
D
Bottom View
Top View
G
D
G
G
S
S
S
D
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOW284
TO-262
Tube
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
C
C
Avalanche energy
L=0.1mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: March 2014
IAS
65
A
EAS
211
mJ
96
V
250
1.9
Steady-State
Steady-State
W
1.2
TJ, TSTG
Symbol
t ≤ 10s
W
125
PDSM
TA=70°C
A
12
PD
TA=25°C
Power Dissipation A
A
15
VSPIKE
TC=100°C
V
400
IDSM
TA=70°C
±20
82
IDM
TA=25°C
Continuous Drain
Current
Units
V
105
ID
TC=100°C
Pulsed Drain Current
Avalanche Current
VGS
TC=25°C
Continuous Drain
Current G
Maximum
80
RθJA
RθJC
-55 to 175
Typ
15
55
0.52
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°C
Max
20
65
0.6
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
2.3
±100
nA
2.8
3.3
V
3.4
4.3
5.5
7.0
5.5
RDS(ON)
Static Drain-Source On-Resistance
VGS=6V, ID=20A
4.2
gFS
Forward Transconductance
VDS=5V, ID=20A
80
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
0.69
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
mΩ
mΩ
S
1
V
105
A
5154
VGS=0V, VDS=40V, f=1MHz
f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
Qgs
µA
5
VGS=10V, ID=20A
Coss
Units
80
VDS=80V, VGS=0V
IDSS
Max
VGS=10V, VDS=40V, ID=20A
0.4
pF
673
pF
48
pF
0.8
1.2
Ω
71
100
nC
18.5
nC
Qgd
Gate Drain Charge
11.5
nC
tD(on)
Turn-On DelayTime
18
ns
tr
Turn-On Rise Time
11
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
38
ns
9
ns
IF=20A, dI/dt=500A/µs
38
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
230
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: March 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
5V
VDS=5V
6V
80
80
10V
4.5V
60
ID(A)
ID (A)
60
40
125°C
40
20
20
25°C
VGS=4.0V
0
0
0
1
2
3
4
1
5
2
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
8
Normalized On-Resistance
2.2
6
RDS(ON) (mΩ)
3
VGS=6V
4
VGS=10V
2
2
VGS=10V
ID=20A
1.8
1.6
1.4
VGS=6V
ID=20A
1.2
1
0.8
0
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
1.0E+02
ID=20A
1.0E+01
8
1.0E+00
6
IS (A)
RDS(ON) (mΩ)
125°C
1.0E-01
125°C
25°C
1.0E-02
4
1.0E-03
25°C
2
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: March 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=40V
ID=20A
Ciss
5000
Capacitance (pF)
VGS (Volts)
8
6
4
2
4000
3000
2000
Coss
1000
Crss
0
0
0
20
40
60
80
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
50
60
70
80
600
10µs
10µs
RDS(ON)
limited
TJ(Max)=175°C
TC=25°C
500
100µs
Power (W)
ID (Amps)
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000.0
100.0
20
1ms
10ms
10.0
DC
1.0
400
300
200
TJ(Max)=175°C
TC=25°C
0.1
100
0.0
0.01
0.1
1
10
VDS (Volts)
100
1000
0
0.0001 0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VGS> or equal to 6V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=0.6°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: March 2014
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Page 4 of 6
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
140
250
120
Current rating ID(A)
200
150
100
50
100
80
60
40
20
0
0
0
25
50
75
100
125
150
175
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Current De-rating (Note F)
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
ZθJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=65°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: March 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: March 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6