AOS Semiconductor Product Reliability Report AON6912L rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AON6912L. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AON6912L passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. V. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation Quality Assurance Information I. Product Description: The AON6912L is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN6x5 package. The Q1 "High Side" MOSEFT is designed to minimize switching losses. The Q2 "Low Side" MOSFET is an low RDS(ON) to reduce conduction losses. The AON6912L is well suited for use in compact dc/dc converter applications. -RoHs Compliant -Halogen Free 2 II. Die / Package Information: AON6912L Standard sub-micron Low voltage N channel process 8 leads DFN 5×6A A194, Ag spot Silver epoxy Au 2mils Epoxy resin with silica filler UL-94 V-0 Up to Level 1 * Process Package Type Lead Frame Die Attach Bond wire Mold Material Flammability Rating Moisture Level Note * based on info provided by assembler and mold compound supplier III. Result of Reliability Stress for AON6912L Test Item Test Condition Time Point Solder Reflow Precondition 168hr 85°°c /85%RH +3 cycle reflow @260°°c - HTGB Temp = 150°°c , Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs Lot Attribution 2 lots Total Sample size Number of Failures 275 pcs 0 77 pcs 0 (Note B**) 1 lot (Note A*) 77 pcs / lot Temp = 150°°c , Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs HAST 130 +/- 2°°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max 100 hrs 1 lot 55 pcs 0 Pressure Pot 121°°c , 29.7psi, RH=100% 96 hrs 2 lots 55 pcs / lot 110 pcs 0 Temperature Cycle -65°°c to 150°°c , air to air 250 / 500 cycles 2 lots 55 pcs / lot 110 pcs 0 HTRB 77 pcs 0 1 lot (Note A*) 77 pcs / lot 55 pcs / lot 3 III. Result of Reliability Stress for AON6912L Continues DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°°c bake 150°°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 245°°c 5 sec 15 15 leads 0 Note A: The HTGB and HTRB reliability data presents total of available AON6912L burn-in data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 46 MTTF = 2478 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AON6912L). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. Failure Rate = Chi2 x 109 / [2 (N) (H) (Af)] = 1.83 x 109 / [2x2x77x500x258] = 46 9 7 MTTF = 10 / FIT = 2.17 x 10 hrs = 2478 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 4