AOS Semiconductor Product Reliability Report AON7900, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AON7900. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AON7900 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AON7900 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN3.3x3.3 package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses. The AON7900 is well suited for use in compact DC/DC converter applications. -RoHS Compliant -Halogen Free Detailed information refers to datasheet. II. Die / Package Information: AON7900 Standard sub-micron Low voltage N channel, dual die Package Type DFN 3.3x3.3A Lead Frame Copper Die Attach Silver epoxy Bonding Wire Au wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Process Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AON7900 Test Item Test Condition Time Point Lot Attribution Total Sample size Number of Failures MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c HTGB - 11 lots 1815pcs 0 JESD22A113 Temp = 150 °c, Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs 77pcs 0 1 lot JESD22A108 Temp = 150 °c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 77pcs / lot 77pcs 0 JESD22A108 130 +/- 2°°c, 85%RH, 33.3 psi, Vgs = 80% of Vgs max 121°°c, 29.7psi, RH=100% 100 hrs (Note A*) 11 lots 77pcs / lot 605pcs 0 JESD22A110 96 hrs (Note A*) 11 lots 55pcs / lot 605pcs 0 JESD22A102 -65°°c to 150°°c, air to air 250 / 500 cycles (Note A*) 11 lots 55pcs / lot 605pcs 0 JESD22A104 (Note A*) 55pcs / lot (Note A*) HTRB HAST Pressure Pot Temperature Cycle 1 lot Standard Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 46 MTTF = 2478 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AON7900). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 7 MTTF = 10 / FIT = 2.17 x 10 hrs = 2478 years / [2x 2x77x500x258] = 46 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 -5 K = Boltzmann’s constant, 8.617164 X 10 eV / K