AOS Semiconductor Product Reliability Report AON6906A, rev A Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc www.aosmd.com This AOS product reliability report summarizes the qualification result for AON6906A. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AON6906A passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AON6906A is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6A package. The Q1 "High Side" MOSFET is designed to minimize switching losses. The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses. Power losses are minimized due to an extremely low combination of RDS(ON) and Crss. In addition, switching behavior is well controlled with a "Schottky style" soft recovery body diode. -RoHS Compliant - Halogen Free Detailed information refers to datasheet. II. Die / Package Information: AON6906A Standard sub-micron Low voltage N channel, dual die Package Type DFN 5x6 Lead Frame Copper Die Attach Silver epoxy Bonding Wire Cu & Au wire Mold Material Epoxy resin with silica filler MSL (moisture sensitive level) Level 1 based on J-STD-020 Process Note * based on information provided by assembler and mold compound supplier III. Result of Reliability Stress for AON6906A Test Item Test Condition Time Point MSL Precondition 168hr 85°c /85%RH +3 cycle reflow@260°c HTGB HTRB HAST Pressure Pot Temperature Cycle Lot Attribution Total Sample size Number of Failures Standard - 11 lots 1815pcs 0 JESD22A113 Temp = 150 °c, Vgs=100% of Vgsmax 168hrs 500 hrs 1000 hrs 1 lot 308pcs 0 JESD22A108 Temp = 150 °c, Vds=80% of Vdsmax 168hrs 500 hrs 1000 hrs 77pcs / lot 308pcs 0 JESD22A108 130 +/- 2°°c, 85%RH, 33.3 psi, Vgs = 80% of Vgs max 121°°c, 29.7psi, RH=100% 100 hrs (Note A*) 11 lots 77pcs / lot 605pcs 0 JESD22A110 96 hrs (Note A*) 11 lots 55pcs / lot 605pcs 0 JESD22A102 -65°°c to 150°°c, air to air 250 / 500 cycles (Note A*) 11 lots 55pcs / lot 605pcs 0 JESD22A104 (Note A*) 55pcs / lot 3 lots (Note A*) 1 lot 3 lots Note A: The reliability data presents total of available generic data up to the published date. IV. Reliability Evaluation FIT rate (per billion): 7 MTTF = 15704 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AON6906A). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] 9 = 1.83 x 10 / [2x (2x2x77x168+2x2x3x77x1000) x258] = 7 9 8 MTTF = 10 / FIT = 1.38 x 10 hrs = 15704 years Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u = The use junction temperature in degree (Kelvin), K = C+273.16 -5 K = Boltzmann’s constant, 8.617164 X 10 eV / K