AOS Semiconductor Product Reliability Report AOD4186, rev B Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: (408) 830-9742 www.aosmd.com 1 This AOS product reliability report summarizes the qualification result for AOD4186. Accelerated environmental tests are performed on a specific sample size, and then followed by electrical test at end point. Review of final electrical test result confirms that AOD4186 passes AOS quality and reliability requirements. The released product will be categorized by the process family and be monitored on a quarterly basis for continuously improving the product quality. Table of Contents: I. II. III. IV. Product Description Package and Die information Environmental Stress Test Summary and Result Reliability Evaluation I. Product Description: The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for low voltage inverter applications. -RoHS Compliant -Halogen Free* 2 II. Die / Package Information: AOD4186 Standard sub-micron Low voltage N channel process Package Type 3 leads TO252 Lead Frame Bare Cu Die Attach Soft solder Bond wire S: Al, 15mils; G: Au 1.3mils Mold Material Epoxy resin with silica filler Flammability Rating UL-94 V-0 Backside Metallization Ti / Ni / Ag Moisture Level Up to Level 1 * Note * based on info provided by assembler and mold compound supplier Process III. Result of Reliability Stress for AOD4186 Test Item Test Condition Time Point Solder Reflow Precondition HTGB 168hr 85°c /85%RH +3 cycle reflow@260°c Temp = 150°c , Vgs=100% of Vgsmax HTRB HAST Pressure Pot Lot Attribution Total Sample size - 9 lots 1210pcs 0 168 / 500 hrs 1 lot 82pcs 0 1000 hrs (Note A*) 168 / 500 hrs 1 lot 1000 hrs (Note A*) 130 +/- 2°c , 85%RH, 33.3 psi, Vgs = 80% of Vgs max 100 hrs 9 lots 121°c , 29.7psi, RH=100% 96 hrs Temp = 150°c , Vds=80% of Vdsmax (Note B**) 5 lots (Note B**) Temperature Cycle -65°c to 150°c , air to air, 250 / 500 cycles 8 lots (Note B**) Number of Failures 77+5 pcs / lot 82pcs 0 77+5 pcs / lot 495pcs 0 50+5 pcs / lot 275pcs 0 50+5 pcs / lot 440pcs 0 50+5 pcs / lot 3 III. Result of Reliability Stress for AOD4186 Continues DPA Internal Vision Cross-section X-ray CSAM NA 5 5 5 5 5 5 0 NA 5 5 0 Bond Integrity Room Temp 150°c bake 150°c bake 0hr 250hr 500hr 40 40 40 40 wires 40 wires 40 wires 0 Solderability 245°c 5 sec 15 15 leads 0 Solder dunk 260°°c 10secs 3 cycles 1 30 units 0 Note A: The HTGB and HTRB reliability data presents total of available AOD4186 burn-in data up to the published date. Note B: The pressure pot, temperature cycle and HAST reliability data for AOD4186 comes from the AOS generic package qualification data. IV. Reliability Evaluation FIT rate (per billion): 128 MTTF = 887 years The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in sample size of the selected product (AOD4186). Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one failure per billion hours. 2 9 9 Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10 9 6 MTTF = 10 / FIT = 7.77 x 10 hrs = 887 years / [2x164x168x 258] = 128 Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval N = Total Number of units from HTRB and HTGB tests H = Duration of HTRB/HTGB testing Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C) Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)] Acceleration Factor ratio list: Af 55 deg C 70 deg C 85 deg C 100 deg C 115 deg C 130 deg C 150 deg C 258 87 32 13 5.64 2.59 1 Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16 Tj u =The use junction temperature in degree (Kelvin), K = C+273.16 k = Boltzmann’s constant, 8.617164 X 10-5eV / K 4