AO8801 - Alpha & Omega Semiconductor

AO8801
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO8801 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is
suitable for use as a load switch or in PWM applications.
It is ESD protected. Standard Product AO8801 is Pbfree (meets ROHS & Sony 259 specifications).
VDS (V) = -20V
ID = -4.7 A (V GS = -4.5V)
RDS(ON) < 42mΩ (VGS = -4.5V)
RDS(ON) < 53mΩ (VGS = -2.5V)
RDS(ON) < 70mΩ (VGS = -1.8V)
ESD Rating: 3000V HBM
D
TSSOP-8
Top View
D1
S1
S1
G1
8
7
6
5
1
2
3
4
D2
S2
S2
G2
G1
Pulsed Drain Current
TA=25°C
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Maximum
-20
Units
V
±8
V
-30
1.4
W
0.9
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
-3.7
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
S2
-4.7
TA=25°C
Power Dissipation A
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current A
D2
RθJA
RθJL
Typ
73
96
63
Max
90
125
75
Units
°C/W
°C/W
°C/W
AO8801
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
On state drain current
ID(ON)
Conditions
Min
ID=-250µA, VGS=0V
VDS=-16V, VGS=0V
-20
VDS=0V, VGS=±4.5V
VDS=0V, VGS=±8V
VDS=VGS ID=-250µA
VGS=-4.5V, VDS=-5V
-0.3
-25
gFS
VSD
IS
Static Drain-Source On-Resistance
TJ=125°C
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-2A
Forward Transconductance
VDS=-5V, ID=-4.7A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
8
Max
Units
V
TJ=55°C
VGS=-4.5V, ID=-4.7A
RDS(ON)
Typ
-0.55
-1
-5
µA
±1
±10
µA
µA
-1
A
35
47
42
57
44
53
mΩ
70
mΩ
54
16
-0.78
mΩ
S
-1
V
-2.2
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS=0V, VDS=-10V, f=1MHz
1450
205
pF
pF
Rg
VGS=0V, VDS=0V, f=1MHz
160
6.5
pF
Ω
VGS=-4.5V, VDS=-10V, ID=-4A
17.2
1.3
nC
nC
4.5
9.5
17
94
35
31
nC
ns
ns
ns
ns
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
tf
trr
Qrr
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VGS=-4.5V, VDS=-10V, RL=2.5Ω,
RGEN=3Ω
IF=-4A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
13.8
ns
nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO8801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
10
-4.5V
-8V
VDS=-5V
-3.0V
20
8
15
6
-2.5V
-ID(A)
-ID (A)
-2.0V
10
125°C
4
VGS=-1.5V
5
2
0
25°C
0
0
1
2
3
4
5
0
0.5
-VDS (Volts)
Fig 1: On-Region Characteristics
80
Normalized On-Resistance
RDS(ON) (mΩ)
1.5
2
1.6
VGS=-1.8V
60
VGS=-2.5V
40
VGS=-4.5V
20
ID=-4.7A, VGS=-2.5V
1.4
ID=-2A, VGS=-1.8V
1.2
ID=-4.7A, VGS=-4.5V
1.0
0.8
0
2
4
6
8
10
0
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1E+01
90
1E+00
ID=-4.7A
75
100
125
150
175
125°C
1E-01
-IS (A)
70
60
125°C
50
50
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
80
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics
25°C
1E-02
1E-03
1E-04
40
25°C
1E-05
30
1E-06
20
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AO8801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2400
5
VDS=-10V
ID=-4.7A
2000
Capacitance (pF)
-VGS (Volts)
4
3
2
1
Ciss
1600
1200
800
Coss
400
Crss
0
0
0
5
10
15
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
TJ(Max)=150°C
TA=25°C
40
100µs
1.0
10ms
1s
10s
20
10
0.1s
DC
0
0.001
0.1
1
10
100
-VDS (Volts)
D=Ton/(Ton+T)
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
20
30
1ms
10
15
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
10.0 limited
0.1
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
100.0
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000