Datasheet

AO8816
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
Features
The AO8816 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO8816 is Pb-free
(meets ROHS & Sony 259 specifications).
VDS (V) = 30V
ID = 8 A (VGS = 10V)
RDS(ON) < 15mΩ (VGS = 10V)
RDS(ON) < 17mΩ (VGS = 4.5)
RDS(ON) < 23mΩ (VGS = 2.5V)
D1
TSSOP-8
Top View
D1/D2
S1
S1
G1
8
7
6
5
1
2
3
4
D1/D2
S2
S2
G2
D2
G1
G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current A
Pulsed Drain Current
ID
IDM
TA=70°C
B
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
Units
V
±12
V
30
1.5
W
1
TJ, TSTG
°C
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
6
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Maximum
30
8
TA=25°C
Power Dissipation A
S2
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
°C/W
°C/W
°C/W
AO8816
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
On state drain current
ID(ON)
Conditions
Min
ID=250µA, VGS=0V
VDS=24V, VGS=0V
30
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
gFS
VSD
IS
Static Drain-Source On-Resistance
1
µA
nΑ
±100
1.4
V
30
TJ=125°C
VGS=4.5V, ID=5A
A
12.2
17
15
21
13
17
mΩ
23
mΩ
1
2.5
S
V
A
17.6
23
0.73
mΩ
1130
170
125
1.5
pF
pF
pF
Ω
14
1.65
5.5
5.7
4.8
nC
nC
nC
ns
ns
Turn-Off Fall Time
36
7
ns
ns
IF=8A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
23
16
ns
nC
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Qrr
Units
1
5
0.6
VGS=2.5V, ID=4A
Forward Transconductance
VDS=5V, ID=8A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Max
V
TJ=55°C
VGS=10V, ID=8A
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=8A
VGS=5V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still
20 air environment with TA =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating.
Rev2: August 2005
2
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO8816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
5V
10V
VGS=5V
3V
15
ID(A)
ID(A)
20
VGS =2V
10
10
125°C
5
VGS =1.5V
25°C
0
0
1
2
3
4
0
5
0.0
VDS(Volts)
1.0
20
Normalize ON-Resistance
1.6
18
VGS =2.5V
16
VGS =4.5V
14
12
VGS =10V
10
0
5
10
15
1.5
2.0
2.5
VGS0.73
(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristi cs
RDS(ON)(mΩ)
0.5
VGS=4.5V
ID=5A
1.4
VGS=10V
ID=8A
1.2
VGS=2.5V
ID=4A
1.0
0.8
20
0
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
40
1E+01
35
1E+00
30
1E-01
25
IS(A)
RDS(ON)(mΩ)
ID=8A
125°C
125°C
1E-02
1E-03
20
1E-04
25°C
15
25°C
1E-05
10
0
2
4
6
8
10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
VSD(Volts)
Figure 6: Body-Diode Characteristics
1.0
AO8816
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000
5
VDS=15V
ID=8A
1600
Capacitance (pF)
VGS(Volts)
4
3
2
Ciss
1200
800
1
400
0
0
0
5
10
Crss
0
15
RDS(ON)
limited
10µs
15
20
1ms
0.1s
TJ(Max)=150°C
TA=25°C
30
100µs
Power (W)
ID (Amps)
10
0.73
40
TJ(Max)=150°C
TA=25°C
10.0
5
VDS(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
Coss
10ms
1.0
20
10
1s
10s
DC
0
0.001
0.1
0.1
1
10
100
VDS (Volts)
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=83°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000