AO4451 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4451 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. Standard Product AO4451 is Pb-free (meets ROHS & Sony 259 specifications). AO4451L is a Green Product ordering option. AO4451 and AO4451L are electrically identical. VDS (V) = -30V ID = -15 A (V GS = -10V) RDS(ON) < 7.7mΩ (VGS = -10V) RDS(ON) < 12mΩ (VGS = -4.5V) ESD Rating: 4KV HBM D SOIC-8 Top View S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A TA=25°C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. W 2 TJ, TSTG t ≤ 10s Steady-State Steady-State A 3.1 -55 to 150 Symbol A V -80 PD TA=70°C A ±20 -12.8 ID IDM TA=25°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Units V -15 TA=70°C Pulsed Drain Current B Power Dissipation A Maximum -30 RθJA RθJL Typ 26 50 14 °C Max 40 75 24 Units °C/W °C/W °C/W AO4451 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -80 TJ=55°C -2.7 6.2 7.7 8.1 9.7 VGS=-4.5V, ID=-10A 9.2 12 VDS=-5V, ID=-15A 50 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qg(4.5V) Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge -10 ±10 -1.9 VGS=-10V, ID=-15A IS Max VGS=-10V, VDS=-15V, ID=-15A -0.69 V mΩ mΩ -1 V -5 A 6400 pF 970 pF pF 2.8 4.2 Ω 91 120 nC 46 60 nC 16 nC 21 nC 15 ns 15 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-15A, dI/dt=100A/µs 38 Qrr Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs 38 VGS=-10V, VDS=-15V, RL=1Ω, RGEN=3Ω µA S 620 VGS=0V, VDS=0V, f=1MHz µA A 5355 VGS=0V, VDS=-15V, f=1MHz Units V VDS=-24V, VGS=0V IDSS RDS(ON) Typ 82.5 ns 34 ns 50 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0: Apr. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4451 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 60 70 -10V -4.5V 60 -4V 40 -3.5V -ID(A) 50 -ID (A) VDS=-5V 50 40 30 30 20 20 125°C VGS=-3V 10 10 25°C 0 0 0 1 2 3 4 1 5 1.5 10 3 3.5 4 Normalized On-Resistance 1.6 VGS=-4.5V 8 RDS(ON) (mΩ) 2.5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 6 VGS=-10V 4 2 ID=-15A 1.4 VGS=-10V 1.2 VGS=-4.5V 1 0.8 0 5 10 15 20 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 1.0E+01 ID=-15A 16 1.0E+00 12 125°C 1.0E-01 125°C -IS (A) RDS(ON) (mΩ) 2 8 VGS=0V 1.0E-02 25°C 1.0E-03 25°C 4 1.0E-04 1.0E-05 0 0.0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4451 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000 10 VDS=-15V ID=-15A 7000 Ciss 6000 Capacitance (pF) -VGS (Volts) 8 6 4 5000 4000 3000 Crss Coss 2000 2 1000 0 0 0 20 40 60 80 100 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 RDS(ON) limited 100µs Power (W) -ID (Amps) 0.1s 1s 10s TJ(Max)=150°C TA=25°C 1 30 TJ(Max)=150°C TA=25°C 60 40 20 DC 0.1 0.1 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 80 10ms 1.0 10 100 10µs 1ms 10.0 5 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton T Single Pulse 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000