AO4813 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4813 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AO4813 is Pb-free (meets ROHS & Sony 259 specifications). AO4813L is a Green Product ordering option. AO4813 and AO4813L are electrically identical. VDS (V) = -30V ID = -7.1 A (V GS = -10V) RDS(ON) < 25mΩ (VGS = -10V) RDS(ON) < 40mΩ (VGS = -4.5V) SOIC-8 Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D1 D2 D2 D1 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Maximum -30 Units V ±20 V -30 2 W 1.28 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A -5.6 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C S2 -7.1 TA=25°C Power Dissipation A D2 RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units °C/W °C/W °C/W AO4813 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V -5 VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.4 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-7.1A TJ=125°C VGS=-4.5V, I D=-5.6A gFS Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-7.1A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Units V TJ=55°C VSD Max -1 VDS=-24V, VGS=0V IDSS IS Typ VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz -2 µA ±100 nA -2.7 V A 20 25 27 33 29 40 19.6 -0.7 mΩ mΩ S -1 V -4.2 A 1573 pF 319 pF 211 pF 6.7 Ω 30.9 nC 16.1 nC 8 nC Gate Drain Charge 4.4 nC Turn-On DelayTime 9.5 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-15V, ID=-7.1A VGS=-10V, VDS=-15V, RL=2.2Ω, RGEN=3Ω 8 ns 44.2 ns 22.2 ns trr Body Diode Reverse Recovery Time IF=-7.1A, dI/dt=100A/µs 25.5 Qrr Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=100A/µs 14.7 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4813 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 30 -10V -5V 25 VDS=-5V 25 -4V 20 -ID(A) -ID (A) 20 15 -3.5V 10 10 VGS=-3V 5 15 125°C 5 0 25°C 0 0 1 2 3 4 5 1 1.5 40 Normalized On-Resistance RDS(ON) (mΩ) 2.5 3 3.5 4 4.5 5 1.60 35 VGS=-4.5V 30 25 VGS=-10V 20 15 ID=-7.1A 1.40 VGS=-10V 1.20 VGS=-4.5V ID=-5.6A 1.00 0.80 10 0 5 10 15 20 0 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 1.0E+01 1.0E+00 ID=-7.1A 50 1.0E-01 40 -IS (A) RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 125°C 30 125°C 1.0E-02 1.0E-03 1.0E-04 20 25°C 1.0E-05 25°C 1.0E-06 10 3 4 5 6 7 8 9 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4813 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 2000 1750 Capacitance (pF) 8 -VGS (Volts) 2250 VDS=-15V ID=-7.1A 6 4 Ciss 1500 1250 1000 750 Coss 500 2 Crss 250 0 0 4 8 12 16 20 24 28 0 32 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10µs 100µs RDS(ON) limited 0.1s 1ms 1s 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 30 20 DC 0.1 10 25 10 10s 0.1 20 TJ(Max)=150°C TA=25°C 30 10ms 1.0 15 40 TJ(Max)=150°C, TA=25°C 10.0 10 -VDS (Volts) Figure 8: Capacitance Characteristics Power (W) -ID (Amps) 100.0 5 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 T 100 1000