AOT480L/AOB480L

AOT480L/AOB480L
80V N-Channel MOSFET
TM
SDMOS
General Description
Product Summary
TM
The AOT480L & AOB480L is fabricated with SDMOS
trench technology that combines excellent RDS(ON) with low
gate charge & low Qrr. The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
VDS
80V
ID (at VGS=10V)
180A
RDS(ON) (at VGS=10V)
< 4.5mΩ (< 4.2mΩ∗)
RDS(ON) (at VGS = 7V)
< 5.5mΩ (< 5.2mΩ∗)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-263
D2PAK
Bottom View
Top View
D
Bottom View
D
D
D
D
G
AOT480L
D
G
G
SD
S
G
S
G
S
S
AOB480L
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT480L
AOB480L
TO-220
TO-263
Tube
Tape & Reel
1000
800
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Avalanche Current
C
V
A
500
15
IDSM
TA=70°C
±25
134
IDM
TA=25°C
Continuous Drain
Current
Units
V
180
ID
TC=100°C
C
Maximum
80
A
12
IAS,IAR
90
A
Avalanche energy L=0.1mH C
EAS,EAR
405
mJ
VGS Spike
VSPIKE
30
V
20ms
TC=25°C
Power Dissipation B
PD
TC=100°C
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Rev.4.0: November 2013
1.9
Steady-State
Steady-State
RθJA
RθJC
W
1.2
TJ, TSTG
Symbol
t ≤ 10s
W
167
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
333
-55 to 175
Typ
12
54
0.35
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°C
Max
15
65
0.45
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOT480L/AOB480L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Min
ID=250µA, VGS=0V
Typ
80
10
TJ=55°C
50
IGSS
Gate-Body leakage current
VDS=0V, VGS=±25V
VGS(th)
Gate Threshold Voltage
VDS=5V ,ID=250µA
2
ID(ON)
On state drain current
VGS=10V, VDS=5V
500
Units
V
VDS=80V, VGS=0V
Zero Gate Voltage Drain Current
Max
µA
±100
nA
2.8
4
V
3.7
4.5
6.1
7.3
VGS=7V, ID=20A
TO220
4.2
5.5
VGS=10V, ID=20A
TO263
3.4
4.2
3.9
60
5.2
Forward Transconductance
VGS=7V, ID=20A
TO263
VDS=5V, ID=20A
mΩ
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.6
IS
Maximum Body-Diode Continuous Current
VGS=10V, ID=20A
TO220
RDS(ON)
gFS
Static Drain-Source On-Resistance
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=40V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
VGS=10V, VDS=40V, ID=20A
Gate Source Charge
A
mΩ
mΩ
mΩ
1
V
180
A
5200
6520
7820
pF
570
810
1060
pF
185
310
430
pF
0.3
0.64
1
Ω
92
116
140
nC
24
30
36
nC
38
53
nC
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
23
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
20
28
36
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
90
132
170
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
31.5
ns
33
ns
46
ns
17.5
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: November 2013
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Page 2 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
180
VDS=5V
6.5V
10V
6V
150
7V
160
120
ID(A)
ID (A)
120
5.5V
90
80
60
5V
40
125°C
30
25°C
VGS=4.5V
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
2
5
4
5
6
7
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
7
Normalized On-Resistance
2.2
6
RDS(ON) (mΩ
Ω)
3
5
VGS=7V
4
VGS=10V
3
2
2
VGS=10V
ID=20A
1.8
17
5
2
VGS=7V10
1.6
1.4
1.2
ID=20A
1
0.8
0
5
10
15
20
25
30
0
25
50
75
100
125
150
175
200
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction
18 Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
9
1.0E+02
ID=20A
8
1.0E+01
7
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
40
6
125°C
1.0E-01
25°C
1.0E-02
5
25°C
4
1.0E-03
1.0E-04
3
4
5
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.4.0: November 2013
6
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
9000
10
VDS=40V
ID=20A
8000
Ciss
7000
Capacitance (pF)
VGS (Volts)
8
6
4
6000
5000
4000
3000
2000
2
Coss
Crss
1000
0
0
0
20
40
60
80
100
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
120
20
40
60
VDS (Volts)
Figure 8: Capacitance Characteristics
5000
1000.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
10µs
100µs
4000
1ms
10ms
10.0
Power (W)
ID (Amps)
100.0
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
2000
1000
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.00001 0.0001 0.001
Zθ JC Normalized Transient
Thermal Resistance
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
17
5
2
10
3000
0.0
10
80
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.45°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.4.0: November 2013
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Page 4 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
IAR (A) Peak Avalanche Current
1000.0
360
Power Dissipation (W)
320
TA=25°C
TA=100°C
100.0
TA=150°C
TA=125°C
280
240
200
160
120
80
40
0
10.0
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
175
1000
200
TA=25°C
160
120
Power (W)
Current rating ID(A)
25
80
100
17
5
2
10
10
40
0
0
25
50
75
100
125
150
175
1
0.0001
TCASE (°C)
Figure 14: Current De-rating (Note F)
1
100 0
10000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.01
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=65°C/W
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.4.0: November 2013
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Page 5 of 7
AOT480L/AOB480L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
240
50
125ºC
di/dt=800A/µs
36
42
200
125ºC
28
26
trr (ns)
25ºC
160
Irm
120
10
80
25ºC
S
5
10
15
20
25
4
30
240
0
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
5
10
15
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
40
50
2
Is=20A
Is=20A
125ºC
125ºC
40
30
1.5
160
125ºC
Qrr
80
20
25ºC
40
10
30
trr
20
25ºC
S
10
Irm
0.5
125ºC
0
0
0
1
S
25ºC
120
trr (ns)
25ºC
Irm (A)
Qrr (nC)
0.5
125ºC
8
2
200
25ºC
20
12
25ºC
0
trr
16
18
125ºC
1
24
Irm (A)
Qrr
S
34
Qrr (nC)
1.5
di/dt=800A/µs
32
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and Peak
Current vs. di/dt
Rev.4.0: November 2013
0
0
0
200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
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Page 6 of 7
AOT480L/AOB480L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.4.0: November 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7