AOB416 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOB416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 100V 45A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 36mΩ RDS(ON) (at VGS = 7V) < 43mΩ 100% UIS Tested 100% Rg Tested TO-263 D2PAK Top View D Bottom View D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range A 5.0 IAS, IAR 28 A EAS, EAR 39 mJ 150 W 75 2.5 PDSM TA=70°C A 6.2 PD TC=100°C V 120 IDSM TA=70°C ±25 32 IDM TA=25°C Continuous Drain Current Units V 45 ID TC=100°C C Maximum 100 W 1.6 TJ, TSTG -55 to 175 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 0: April 2009 A AD Symbol t ≤ 10s RθJA Steady-State Typ 11 Max 14 Units °C/W 40 50 °C/W RθJC 0.7 1 °C/W Steady-State www.aosmd.com Page 1 of 7 AOB416 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V VDS=100V, VGS=0V 100 50 Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) ID(ON) Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 2.8 VGS=10V, VDS=5V 130 VGS=10V, ID=20A TJ=125°C VGS=7V, ID=15A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=50V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=20A Units V TJ=55°C Static Drain-Source On-Resistance Max 10 IGSS RDS(ON) Typ µA 100 nA 3.4 4 V 30 36 54 65 34 43 mΩ 1 V 100 A A 28 0.68 mΩ S 950 1180 1450 pF 77 110 145 pF 21 36 50 pF 0.4 0.8 1.2 Ω 16 20 24 nC 5.5 7 8.5 nC 3.5 6.3 9 nC 10 VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω ns 7 ns 15 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 13 19 25 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 50 70 90 7 ns ns nC 2 A. The value of RθJΑ is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: April 2009 www.aosmd.com Page 2 of 7 AOB416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 60 10V VDS=5V 8V 50 40 7V ID(A) ID (A) 40 30 20 20 6V 125°C 10 25°C VGS=5V 0 0 0 1 2 3 4 5 3 4 50 6 7 8 9 Normalized On-Resistance 2.2 45 RDS(ON) (mΩ) 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 40 VGS=7V 35 30 VGS=10V 25 2 VGS=10V ID=20A 1.8 1.6 1.4 1.2 VGS=7V ID=15A 1 0.8 20 0 5 10 0 15 20 25 30 35 40 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 70 1.0E+02 ID=20A 1.0E+01 60 40 50 125°C IS (A) RDS(ON) (mΩ) 1.0E+00 40 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 30 1.0E-04 25°C 20 6 7 8 9 1.0E-05 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0: April 2009 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOB416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1600 10 Ciss 1200 Capacitance (pF) VGS (Volts) 1400 VDS=50V ID=20A 8 6 4 1000 800 600 400 2 Crss Coss 200 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 10µs RDS(ON) limited 100µs 1ms 10ms DC 1.0 0.1 0.0 0.01 TJ(Max)=175°C TC=25°C 0.1 1 10 VDS (Volts) 100 1000 1000 100 0.00001 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 0.1 10 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toCase (Note F) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 100 TJ(Max)=175°C TC=25°C Power (W) ID (Amps) 100.0 10 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 10000 1000.0 10.0 20 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1°C/W 1 0.1 PD Single Pulse 0.01 0.00001 0.0001 0.001 Ton 0.01 T 0.1 1 10 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: April 2009 www.aosmd.com Page 4 of 7 AOB416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 180 TA=25°C TA=25°C A=100°C TTA=100°C TA=150°C TA=125°C TA=150°C 150 120 90 60 30 TA=125°C 10 0.000001 0 0 60 50 50 40 40 30 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) Power (W) Current rating ID(A) 0.00001 0.0001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C) 30 20 20 10 TA=25°C 10 0 0.01 0 0 25 50 75 100 125 150 175 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=45°C/W 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) 10 0.1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 0.001 0.00001 PD Single Pulse Ton 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0: February 2009 www.aosmd.com Page 5 of 7 AOB416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 125ºC Irm 30 20 15 Qrr 60 20 25ºC 0 8 5 4 5 10 15 20 25 0.5 25 25 20 20 25ºC 15 Qrr 60 125ºC 30 Irm 0 0 200 400 600 800 125ºC 30 Is=20A 2 trr 25ºC 10 1.5 5 5 0 1000 0 1 S 125º 0.5 25ºC 0 di/dt (A/µs) Figure 15: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 0: April 2009 0 25 15 10 25ºC 20 S 90 15 2.5 trr (ns) 125ºC 10 30 Irm (A) Qrr (nC) 120 5 IS (A) Figure 14: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 30 Is=20A 125ºC 25ºC IS (A) Figure 13: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 150 1 S 0 30 2 1.5 0 0 0 25ºC trr 12 10 2.5 S 25ºC 90 25 3 125ºC di/dt=800A/µs trr (ns) 125ºC di/dt=800A/µs 120 Qrr (nC) 24 30 Irm (A) 150 www.aosmd.com 200 400 600 800 0 1000 di/dt (A/µs) Figure 16: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AOB416 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC Rg - 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: April 2009 Vgs Isd L + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com Page 7 of 7