AON6444 60V N-Channel MOSFET SDMOS TM General Description Product Summary The AON6444 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS 60V ID (at VGS=10V) 81A RDS(ON) (at VGS=10V) < 6.5mΩ RDS(ON) (at VGS = 4.5V) < 8mΩ 100% UIS Tested 100% Rg Tested D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G S PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C V A 170 14 IDSM TA=70°C ±20 51 IDM TA=25°C Continuous Drain Current Units V 81 ID TC=100°C Maximum 60 A 11 Avalanche Current C IAR 58 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 168 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: November 2010 2.3 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.4 TJ, TSTG Symbol t ≤ 10s W 33 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 PD -55 to 150 Typ 14 40 1 °C Max 17 55 1.5 Units °C/W °C/W °C/W Page 1 of 7 AON6444 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ Max 60 V VDS=60V, VGS=0V 100 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 170 TJ=55°C 500 VDS=0V, VGS= ±20V 100 VGS=10V, ID=20A 2 2.5 5.4 6.5 9.6 11.5 VGS=4.5V, ID=20A 6.4 8 VDS=5V, ID=20A 75 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance µA nA V A RDS(ON) TJ=125°C Units mΩ mΩ S 1 V 81 A 3800 4800 5800 pF 330 470 610 pF 110 190 270 pF 0.5 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 64 80 96 nC Qg(4.5V) Total Gate Charge 32 40 48 nC 12 15 18 nC 14 20 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=20A 8 VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 13.5 ns 4.2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 14 18 22 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 43 54 65 51 ns 7 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev 1: Nov. 2010 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: November 2010 www.aosmd.com Page 2 of 7 AON6444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 10V 7V 120 150 4V VDS=5V 120 4.5V 5V 90 ID(A) ID (A) 90 3.5V 60 60 30 30 125°C 25°C VGS=3V 0 0 0 1 2 3 4 0 5 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 8 Normalized On-Resistance 2 7 RDS(ON) (mΩ ) 1 VGS=4.5V 6 VGS=10V 5 VGS=10V ID=20A 1.8 1.6 17 5 VGS=4.5V ID=20A 2 10 1.4 1.2 1 0.8 4 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 15 1.0E+02 ID=20A 1.0E+01 13 40 9 IS (A) RDS(ON) (mΩ ) 1.0E+00 11 125°C 125°C 1.0E-01 1.0E-02 7 25°C 1.0E-03 5 1.0E-04 25°C 1.0E-05 3 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: November 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AON6444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 7000 VDS=30V ID=20A 6000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 5000 4000 3000 2000 Coss 2 Crss 1000 0 0 0 20 40 60 80 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 400 1000.0 360 ID (Amps) RDS(ON) limited 10.0 100µs 1ms DC 1.0 TJ(Max)=150°C TC=25°C 0.1 320 10µs TJ(Max)=150°C TC=25°C 280 Power (W) 10µs 100.0 17 5 2 10 240 200 160 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 Zθ JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: November 2010 www.aosmd.com Page 4 of 7 AON6444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 80 120 Power Dissipation (W) IAR (A) Peak Avalanche Current 150 TA=25°C 90 TA=100°C 60 TA=150°C 30 TA=125°C 70 60 50 40 81A 30 20 10 0 0 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 100 10000 80 1000 Power (W) Current rating ID(A) TA=25°C 60 40 17 5 2 10 100 10 20 1 0.0001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.01 1 100 10000 0 18 150 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=55°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev 1: November 2010 www.aosmd.com Page 5 of 7 AON6444 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 25 21 2 125ºC di/dt=800A/µs di/dt=800A/µs 80 18 20 1.6 15 125ºC 40 10 trr Irm 25ºC 0.8 0.4 3 0 0 5 10 15 20 25 125ºC 0 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 100 80 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 25 Is=20A 81A 25ºC S 5 0 1.2 9 6 20 25ºC 12 S 25ºC trr (ns) Qrr Irm (A) Qrr (nC) 15 60 125ºC 30 2.5 Is=20A 125ºC 25 20 2 125ºC 40 Qrr 10 125ºC 20 1.5 trr 15 25ºC 1 10 5 25ºC 25ºC 5 0 0 200 400 600 800 1000 0 0 0 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 1: November 2010 0.5 S 125º Irm 0 S 15 25ºC trr (ns) 60 Irm (A) Qrr (nC) 20 www.aosmd.com 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AON6444 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 1: November 2010 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7