AOD4146/AOI4146 30V N-Channel MOSFET SDMOS TM General Description Product Summary The AOD4146/AOI4146 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 30V 55A RDS(ON) (at VGS=10V) < 5.6mΩ RDS(ON) (at VGS = 4.5V) < 9.5mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK TopView TO-251A IPAK Bottom View D Top View Bottom View D G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Units V ±20 V A 190 15 IDSM TA=70°C Maximum 30 43 IDM TA=25°C Continuous Drain Current S D 55 ID TC=100°C G D A 12 Avalanche Current C IAS, IAR 50 A Avalanche energy L=0.05mH C TC=25°C EAS, EAR 63 mJ Power Dissipation B TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev 1: June 2009 2.5 Steady-State Steady-State RθJA RθJC www.aosmd.com W 1.6 TJ, TSTG Symbol t ≤ 10s W 31 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 62 PD -55 to 175 Typ 15 41 2 °C Max 20 50 2.4 Units °C/W °C/W °C/W Page 1 of 7 AOD4146/AOI4146 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V Typ Max 30 V VDS=30V, VGS=0V 100 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.6 ID(ON) On state drain current VGS=10V, VDS=5V 190 TJ=55°C 500 VDS=0V, VGS= ±20V 100 VGS=10V, ID=20A 2.1 3 nA V 4.7 5.6 7.4 8.9 VGS=4.5V, ID=10A 7.9 9.5 VDS=5V, ID=20A 50 Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance µA A RDS(ON) TJ=125°C Units mΩ mΩ S 1 V 55 A 1630 2037 2440 pF 260 375 490 pF 130 220 300 pF 0.5 1.1 1.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 28 35 42 nC Qg(4.5V) Total Gate Charge 13 16 20 nC 6.8 8.6 10 nC 4.6 6.4 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 8 10 12 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 12 15 18 2.8 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 8.8 ns 26 ns 23 ns 6 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: June 2009 www.aosmd.com Page 2 of 7 AOD4146/AOI4146 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 5V 10V VDS=5V 80 80 4.5V 6V 60 60 ID(A) ID (A) 7V 4V 40 40 20 20 125°C VGS=3.5V 0 0 0 1 2 3 4 0 5 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 15 Normalized On-Resistance 2 12 RDS(ON) (mΩ Ω) 25°C VGS=4.5V 9 6 VGS=10V 3 1.8 VGS=10V ID=20A 1.6 17 5 2 10 =4.5V 1.4 1.2 VGS ID=20A 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 20 ID=20A 1.0E+01 16 40 125°C 12 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 8 1.0E-01 25°C 1.0E-02 1.0E-03 4 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: June 2009 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOD4146/AOI4146 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3000 VDS=15V ID=20A 8 2500 Capacitance (pF) VGS (Volts) Ciss 6 4 2 2000 1500 1000 Coss 500 Crss 0 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics 40 0 10µs 100.0 RDS(ON) 10µs 100µs 10.0 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 160 Power (W) ID (Amps) 25 200 1000.0 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 10 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 40 RθJC=2.4°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: June 2009 www.aosmd.com Page 4 of 7 AOD4146/AOI4146 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 IAR (A) Peak Avalanche Current TA=25°C Power Dissipation (W) TA=100°C TA=150°C TA=125°C 40 20 0 10 0.000001 0.00001 0.0001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 0 0.001 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) 60 100000 50 10000 TA=25°C 1000 17 5 2 10 40 Power (W) Current rating ID(A) 60 30 100 20 175 10 10 1 0 0.00001 0 Zθ JA Normalized Transient Thermal Resistance 10 1 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.001 0.1 10 1000 0 18 175 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: June 2009 www.aosmd.com Page 5 of 7 AOD4146/AOI4146 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 12 di/dt=800A/µs 25 16 3 14 10 di/dt=800A/µs 2.5 12 6 25ºC 10 125ºC trr (ns) 8 125ºC 2 25ºC 0 10 15 20 25 0 30 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 10 20 5 10 15 20 25 30 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 15 2.5 Is=20A Is=20A 8 125ºC 15 12 2 125ºC 25ºC 6 10 Qrr 4 trr (ns) trr Irm (A) Qrr (nC) 0.5 25ºC 2 0 5 1 S 4 5 1.5 25ºC 6 4 Irm 0 trr 9 1.5 25ºC 6 S 15 2 125ºC 10 S 8 125ºC Qrr Irm (A) Qrr (nC) 20 1 125º 125ºC S 5 25ºC Irm 0 0 200 400 600 800 2 3 0 0 1000 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev 1: June 2009 0.5 25ºC 0 0 200 400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com Page 6 of 7 AOD4146/AOI4146 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: June 2009 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7